Static and dynamic modelling for IGZO-TFT devices with high-k multilayer dielectric

• Autor(a) principal: Bhudia, Shiv Jyotindra
• Data de Publicação: 2017
• Tipo de documento: Dissertação
• Idioma: eng
• Título da fonte: Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
• Texto Completo: http://hdl.handle.net/10362/31864
• topic: IGZO; TFT; Static models; Dynamic models; Compact models; small signal; Domínio/Área Científica::Engenharia e Tecnologia::Engenharia dos Materiais

Indium-Gallium-Zinc-Oxide thin-film transistors (IGZO-TFT) are a strong alternative technology for the current trend of Si based field-effect transistor (FET) for flat-panel display backplane and internet of things internet of things (IoT). In these applications, comprehensive understanding and accurate modelling of thin-film transistor (TFT) is compulsory for systematic circuit design. In this study, IGZO-TFTs with high- multilayer dielectric, which were previously fabricated at CENIMAT/I3N Portugal are characterized in the University of Cambridge at the department of electrical engineering. Alongside this characterization, it is developed a compact static model that is capable of describing above-threshold linear behaviour. This model is based on physical parameters and also accounts the effects of contact resistance in source and drain terminals. Furthermore, it is developed a dynamic small signals model, based on conventional FET models and its validity is studied with the help of S-Parameters and capacitance-voltage characteristics (C-V) characteristics. The great advantage of the developed models, in both static and dynamic aspects, is the low number of parameters required to be extracted physically with good fitting results. This can empower new users that are not so familiar with the modelling aspect to design simple electrical circuits with IGZO-TFTs.