Capacitance-voltage characteristics of InAs dots: a simple model

Detalhes bibliográficos
Autor(a) principal: Chiquito,A. J.
Data de Publicação: 2002
Outros Autores: Pusep,Yu. A., Mergulhão,S., Galzerani,J. C.
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Brazilian Journal of Physics
Texto Completo: http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332002000400020
Resumo: An electrostatic model was presented for the calculation of the capacitance-voltage characteristics of a semiconductor structure where quantum dots were embedded. The model was based on the linear coupling between the contributions of the quantum dots and the bulk host. We further applied this model to an InAs/GaAs self-assembled quantum dots system. The calculated capacitance was found in good agreement with the experimental curves, providing parameters of the dots ensemble, as the excitation energy of the confined electrons.
id SBF-2_f1a27dbd0f0e51ffa4a207cb0acee733
oai_identifier_str oai:scielo:S0103-97332002000400020
network_acronym_str SBF-2
network_name_str Brazilian Journal of Physics
repository_id_str
spelling Capacitance-voltage characteristics of InAs dots: a simple modelAn electrostatic model was presented for the calculation of the capacitance-voltage characteristics of a semiconductor structure where quantum dots were embedded. The model was based on the linear coupling between the contributions of the quantum dots and the bulk host. We further applied this model to an InAs/GaAs self-assembled quantum dots system. The calculated capacitance was found in good agreement with the experimental curves, providing parameters of the dots ensemble, as the excitation energy of the confined electrons.Sociedade Brasileira de Física2002-09-01info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersiontext/htmlhttp://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332002000400020Brazilian Journal of Physics v.32 n.3 2002reponame:Brazilian Journal of Physicsinstname:Sociedade Brasileira de Física (SBF)instacron:SBF10.1590/S0103-97332002000400020info:eu-repo/semantics/openAccessChiquito,A. J.Pusep,Yu. A.Mergulhão,S.Galzerani,J. C.eng2002-12-04T00:00:00Zoai:scielo:S0103-97332002000400020Revistahttp://www.sbfisica.org.br/v1/home/index.php/pt/ONGhttps://old.scielo.br/oai/scielo-oai.phpsbfisica@sbfisica.org.br||sbfisica@sbfisica.org.br1678-44480103-9733opendoar:2002-12-04T00:00Brazilian Journal of Physics - Sociedade Brasileira de Física (SBF)false
dc.title.none.fl_str_mv Capacitance-voltage characteristics of InAs dots: a simple model
title Capacitance-voltage characteristics of InAs dots: a simple model
spellingShingle Capacitance-voltage characteristics of InAs dots: a simple model
Chiquito,A. J.
title_short Capacitance-voltage characteristics of InAs dots: a simple model
title_full Capacitance-voltage characteristics of InAs dots: a simple model
title_fullStr Capacitance-voltage characteristics of InAs dots: a simple model
title_full_unstemmed Capacitance-voltage characteristics of InAs dots: a simple model
title_sort Capacitance-voltage characteristics of InAs dots: a simple model
author Chiquito,A. J.
author_facet Chiquito,A. J.
Pusep,Yu. A.
Mergulhão,S.
Galzerani,J. C.
author_role author
author2 Pusep,Yu. A.
Mergulhão,S.
Galzerani,J. C.
author2_role author
author
author
dc.contributor.author.fl_str_mv Chiquito,A. J.
Pusep,Yu. A.
Mergulhão,S.
Galzerani,J. C.
description An electrostatic model was presented for the calculation of the capacitance-voltage characteristics of a semiconductor structure where quantum dots were embedded. The model was based on the linear coupling between the contributions of the quantum dots and the bulk host. We further applied this model to an InAs/GaAs self-assembled quantum dots system. The calculated capacitance was found in good agreement with the experimental curves, providing parameters of the dots ensemble, as the excitation energy of the confined electrons.
publishDate 2002
dc.date.none.fl_str_mv 2002-09-01
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332002000400020
url http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332002000400020
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv 10.1590/S0103-97332002000400020
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv text/html
dc.publisher.none.fl_str_mv Sociedade Brasileira de Física
publisher.none.fl_str_mv Sociedade Brasileira de Física
dc.source.none.fl_str_mv Brazilian Journal of Physics v.32 n.3 2002
reponame:Brazilian Journal of Physics
instname:Sociedade Brasileira de Física (SBF)
instacron:SBF
instname_str Sociedade Brasileira de Física (SBF)
instacron_str SBF
institution SBF
reponame_str Brazilian Journal of Physics
collection Brazilian Journal of Physics
repository.name.fl_str_mv Brazilian Journal of Physics - Sociedade Brasileira de Física (SBF)
repository.mail.fl_str_mv sbfisica@sbfisica.org.br||sbfisica@sbfisica.org.br
_version_ 1754734860073697280

Registros relacionados