Boron doping of hydrogenated amorphous silicon prepared by rf-co-sputtering
Autor(a) principal: | |
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Data de Publicação: | 2002 |
Outros Autores: | , |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Brazilian Journal of Physics |
Texto Completo: | http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332002000200037 |
Resumo: | This paper addresses the doping mechanism of amorphous semiconductors through the investigation of boron doped rf co-sputtered amorphous hydrogenated silicon. The activation energy and room temperature conductivity varied from 0.9 to 0.3 eV and from 10-12 to 10-4 Ohm-1 .cm-1, respectively, by ranging the boron concentration from 0 to 3 at.%. These ranges of electronic properties are of the same order of those reported for samples prepared by plasma enhanced chemical vapor deposition (PECVD). In spite of these similarities, there are some relevant differences. The doping effciency, at low boron concentrations, is much lower than that of PECVD samples. In addition, the creation of deep defects (dangling bonds) does not follow the square root power law dependence on the boron concentration as proposed by Street and observed in PECVD samples. These differences are associated with the density of defects, which is much higher in films prepared by sputtering. The increase in the deep defect density is more likely related to topological disorder, introduced by the presence of a high concentration of inactive impurities. |
id |
SBF-2_2f807c29c0448920af2a3bfa4df60a6e |
---|---|
oai_identifier_str |
oai:scielo:S0103-97332002000200037 |
network_acronym_str |
SBF-2 |
network_name_str |
Brazilian Journal of Physics |
repository_id_str |
|
spelling |
Boron doping of hydrogenated amorphous silicon prepared by rf-co-sputteringThis paper addresses the doping mechanism of amorphous semiconductors through the investigation of boron doped rf co-sputtered amorphous hydrogenated silicon. The activation energy and room temperature conductivity varied from 0.9 to 0.3 eV and from 10-12 to 10-4 Ohm-1 .cm-1, respectively, by ranging the boron concentration from 0 to 3 at.%. These ranges of electronic properties are of the same order of those reported for samples prepared by plasma enhanced chemical vapor deposition (PECVD). In spite of these similarities, there are some relevant differences. The doping effciency, at low boron concentrations, is much lower than that of PECVD samples. In addition, the creation of deep defects (dangling bonds) does not follow the square root power law dependence on the boron concentration as proposed by Street and observed in PECVD samples. These differences are associated with the density of defects, which is much higher in films prepared by sputtering. The increase in the deep defect density is more likely related to topological disorder, introduced by the presence of a high concentration of inactive impurities.Sociedade Brasileira de Física2002-06-01info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersiontext/htmlhttp://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332002000200037Brazilian Journal of Physics v.32 n.2a 2002reponame:Brazilian Journal of Physicsinstname:Sociedade Brasileira de Física (SBF)instacron:SBF10.1590/S0103-97332002000200037info:eu-repo/semantics/openAccessLima Jr.,M.M. deFreire Jr.,F.L.Marques,F.C.eng2002-11-26T00:00:00Zoai:scielo:S0103-97332002000200037Revistahttp://www.sbfisica.org.br/v1/home/index.php/pt/ONGhttps://old.scielo.br/oai/scielo-oai.phpsbfisica@sbfisica.org.br||sbfisica@sbfisica.org.br1678-44480103-9733opendoar:2002-11-26T00:00Brazilian Journal of Physics - Sociedade Brasileira de Física (SBF)false |
dc.title.none.fl_str_mv |
Boron doping of hydrogenated amorphous silicon prepared by rf-co-sputtering |
title |
Boron doping of hydrogenated amorphous silicon prepared by rf-co-sputtering |
spellingShingle |
Boron doping of hydrogenated amorphous silicon prepared by rf-co-sputtering Lima Jr.,M.M. de |
title_short |
Boron doping of hydrogenated amorphous silicon prepared by rf-co-sputtering |
title_full |
Boron doping of hydrogenated amorphous silicon prepared by rf-co-sputtering |
title_fullStr |
Boron doping of hydrogenated amorphous silicon prepared by rf-co-sputtering |
title_full_unstemmed |
Boron doping of hydrogenated amorphous silicon prepared by rf-co-sputtering |
title_sort |
Boron doping of hydrogenated amorphous silicon prepared by rf-co-sputtering |
author |
Lima Jr.,M.M. de |
author_facet |
Lima Jr.,M.M. de Freire Jr.,F.L. Marques,F.C. |
author_role |
author |
author2 |
Freire Jr.,F.L. Marques,F.C. |
author2_role |
author author |
dc.contributor.author.fl_str_mv |
Lima Jr.,M.M. de Freire Jr.,F.L. Marques,F.C. |
description |
This paper addresses the doping mechanism of amorphous semiconductors through the investigation of boron doped rf co-sputtered amorphous hydrogenated silicon. The activation energy and room temperature conductivity varied from 0.9 to 0.3 eV and from 10-12 to 10-4 Ohm-1 .cm-1, respectively, by ranging the boron concentration from 0 to 3 at.%. These ranges of electronic properties are of the same order of those reported for samples prepared by plasma enhanced chemical vapor deposition (PECVD). In spite of these similarities, there are some relevant differences. The doping effciency, at low boron concentrations, is much lower than that of PECVD samples. In addition, the creation of deep defects (dangling bonds) does not follow the square root power law dependence on the boron concentration as proposed by Street and observed in PECVD samples. These differences are associated with the density of defects, which is much higher in films prepared by sputtering. The increase in the deep defect density is more likely related to topological disorder, introduced by the presence of a high concentration of inactive impurities. |
publishDate |
2002 |
dc.date.none.fl_str_mv |
2002-06-01 |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/article |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
format |
article |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332002000200037 |
url |
http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332002000200037 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
10.1590/S0103-97332002000200037 |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
text/html |
dc.publisher.none.fl_str_mv |
Sociedade Brasileira de Física |
publisher.none.fl_str_mv |
Sociedade Brasileira de Física |
dc.source.none.fl_str_mv |
Brazilian Journal of Physics v.32 n.2a 2002 reponame:Brazilian Journal of Physics instname:Sociedade Brasileira de Física (SBF) instacron:SBF |
instname_str |
Sociedade Brasileira de Física (SBF) |
instacron_str |
SBF |
institution |
SBF |
reponame_str |
Brazilian Journal of Physics |
collection |
Brazilian Journal of Physics |
repository.name.fl_str_mv |
Brazilian Journal of Physics - Sociedade Brasileira de Física (SBF) |
repository.mail.fl_str_mv |
sbfisica@sbfisica.org.br||sbfisica@sbfisica.org.br |
_version_ |
1754734859774853120 |