Electrical properties of bi-doped PbTe layers grown by molecular beam epitaxy on BaF2 substrates

• Autor(a) principal: Anjos,A.M.P. dos
• Data de Publicação: 2004
• Outros Autores: Abramof,E., Rappl,P.H.O., Ueta,A.Y., Closs,H.
• Tipo de documento: Artigo
• Idioma: eng
• Título da fonte: Brazilian Journal of Physics
• Texto Completo: http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332004000400033

Resisistivity and Hall measurements were performed at temperatures from 10 to 320K on Bi-doped PbTe layers grown on (111) BaF2 by molecular beam epitaxy. Samples with electron concentration varying from 1x10(17) to 4x10(19)cm-3 were obtained. Results indicated that all offered Bi atoms in the vapor phase were effectively incorporated in the PbTe as active donors. No thermal activation in the whole doping range was observed, indicating that the Bi donor level lies resonant with the conduction band. The mobility curve showed that the PbTe layers tend to a metallic behavior as the electron concentration increases. A value around 1x10(19) cm-3 is suggested for n+ PbTe contact layers in device application.