On the morphology of films grown by droplet-assisted molecular beam epitaxy

Detalhes bibliográficos
Autor(a) principal: Lamas,T. E.
Data de Publicação: 2002
Outros Autores: Quivy,A. A.
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Brazilian Journal of Physics
Texto Completo: http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332002000200043
Resumo: Atomic Force microscopy was used to investigate the morphology of GaAs(001) layers deposited by molecular beam epitaxy using a non conventional growth method that involves the supply of a few monolayers of gallium (the arsenic cell is shuttered) followed by the annealing of the surface under an arsenic ux (the gallium cell is shuttered). When the silicon shutter is opened and closed together with the gallium one, this particular growth mode allows the silicon atoms to be incorporated into the arsenic sites and p-type GaAs(001) layers can be obtained. Several sets of samples were grown and analyzed in order to better understand the microscopic growth mechanisms of this kind of layers and minimize the number and size of the structural defects that are characteristic of this peculiar technique.
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spelling On the morphology of films grown by droplet-assisted molecular beam epitaxyAtomic Force microscopy was used to investigate the morphology of GaAs(001) layers deposited by molecular beam epitaxy using a non conventional growth method that involves the supply of a few monolayers of gallium (the arsenic cell is shuttered) followed by the annealing of the surface under an arsenic ux (the gallium cell is shuttered). When the silicon shutter is opened and closed together with the gallium one, this particular growth mode allows the silicon atoms to be incorporated into the arsenic sites and p-type GaAs(001) layers can be obtained. Several sets of samples were grown and analyzed in order to better understand the microscopic growth mechanisms of this kind of layers and minimize the number and size of the structural defects that are characteristic of this peculiar technique.Sociedade Brasileira de Física2002-06-01info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersiontext/htmlhttp://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332002000200043Brazilian Journal of Physics v.32 n.2a 2002reponame:Brazilian Journal of Physicsinstname:Sociedade Brasileira de Física (SBF)instacron:SBF10.1590/S0103-97332002000200043info:eu-repo/semantics/openAccessLamas,T. E.Quivy,A. A.eng2002-11-26T00:00:00Zoai:scielo:S0103-97332002000200043Revistahttp://www.sbfisica.org.br/v1/home/index.php/pt/ONGhttps://old.scielo.br/oai/scielo-oai.phpsbfisica@sbfisica.org.br||sbfisica@sbfisica.org.br1678-44480103-9733opendoar:2002-11-26T00:00Brazilian Journal of Physics - Sociedade Brasileira de Física (SBF)false
dc.title.none.fl_str_mv On the morphology of films grown by droplet-assisted molecular beam epitaxy
title On the morphology of films grown by droplet-assisted molecular beam epitaxy
spellingShingle On the morphology of films grown by droplet-assisted molecular beam epitaxy
Lamas,T. E.
title_short On the morphology of films grown by droplet-assisted molecular beam epitaxy
title_full On the morphology of films grown by droplet-assisted molecular beam epitaxy
title_fullStr On the morphology of films grown by droplet-assisted molecular beam epitaxy
title_full_unstemmed On the morphology of films grown by droplet-assisted molecular beam epitaxy
title_sort On the morphology of films grown by droplet-assisted molecular beam epitaxy
author Lamas,T. E.
author_facet Lamas,T. E.
Quivy,A. A.
author_role author
author2 Quivy,A. A.
author2_role author
dc.contributor.author.fl_str_mv Lamas,T. E.
Quivy,A. A.
description Atomic Force microscopy was used to investigate the morphology of GaAs(001) layers deposited by molecular beam epitaxy using a non conventional growth method that involves the supply of a few monolayers of gallium (the arsenic cell is shuttered) followed by the annealing of the surface under an arsenic ux (the gallium cell is shuttered). When the silicon shutter is opened and closed together with the gallium one, this particular growth mode allows the silicon atoms to be incorporated into the arsenic sites and p-type GaAs(001) layers can be obtained. Several sets of samples were grown and analyzed in order to better understand the microscopic growth mechanisms of this kind of layers and minimize the number and size of the structural defects that are characteristic of this peculiar technique.
publishDate 2002
dc.date.none.fl_str_mv 2002-06-01
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332002000200043
url http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332002000200043
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv 10.1590/S0103-97332002000200043
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv text/html
dc.publisher.none.fl_str_mv Sociedade Brasileira de Física
publisher.none.fl_str_mv Sociedade Brasileira de Física
dc.source.none.fl_str_mv Brazilian Journal of Physics v.32 n.2a 2002
reponame:Brazilian Journal of Physics
instname:Sociedade Brasileira de Física (SBF)
instacron:SBF
instname_str Sociedade Brasileira de Física (SBF)
instacron_str SBF
institution SBF
reponame_str Brazilian Journal of Physics
collection Brazilian Journal of Physics
repository.name.fl_str_mv Brazilian Journal of Physics - Sociedade Brasileira de Física (SBF)
repository.mail.fl_str_mv sbfisica@sbfisica.org.br||sbfisica@sbfisica.org.br
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