Characterization of PbTe p - n+ junction grown by molecular beam epitaxy

Detalhes bibliográficos
Autor(a) principal: Barros,A.S.
Data de Publicação: 2004
Outros Autores: Abramof,E., Rappl,P.H.O., Ueta,A.Y., Closs,H.
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Brazilian Journal of Physics
Texto Completo: http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332004000400029
Resumo: In this work we investigate the electrical properties of PbTe p - n+ junction. Mesa diodes were fabricated from p - n+ PbTe layers grown on (111) BaF2 substrates by molecular beam epitaxy. From the analysis of the current versus voltage characteristic measured at 80K, the incremental differential resistance and the series resistance were determined. The capacitance versus voltage curves were measured at a frequency of 1MHz. The one-sided abrupt junction was checked through the 1/C²xV plot. From the linear fit, the hole concentration and the depletion layer width in the p-side were obtained. The high detectivity values measured for the p - n+ PbTe diode confirm that it is very suitable for infrared detection.
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spelling Characterization of PbTe p - n+ junction grown by molecular beam epitaxyIn this work we investigate the electrical properties of PbTe p - n+ junction. Mesa diodes were fabricated from p - n+ PbTe layers grown on (111) BaF2 substrates by molecular beam epitaxy. From the analysis of the current versus voltage characteristic measured at 80K, the incremental differential resistance and the series resistance were determined. The capacitance versus voltage curves were measured at a frequency of 1MHz. The one-sided abrupt junction was checked through the 1/C²xV plot. From the linear fit, the hole concentration and the depletion layer width in the p-side were obtained. The high detectivity values measured for the p - n+ PbTe diode confirm that it is very suitable for infrared detection.Sociedade Brasileira de Física2004-06-01info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersiontext/htmlhttp://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332004000400029Brazilian Journal of Physics v.34 n.2b 2004reponame:Brazilian Journal of Physicsinstname:Sociedade Brasileira de Física (SBF)instacron:SBF10.1590/S0103-97332004000400029info:eu-repo/semantics/openAccessBarros,A.S.Abramof,E.Rappl,P.H.O.Ueta,A.Y.Closs,H.eng2004-08-31T00:00:00Zoai:scielo:S0103-97332004000400029Revistahttp://www.sbfisica.org.br/v1/home/index.php/pt/ONGhttps://old.scielo.br/oai/scielo-oai.phpsbfisica@sbfisica.org.br||sbfisica@sbfisica.org.br1678-44480103-9733opendoar:2004-08-31T00:00Brazilian Journal of Physics - Sociedade Brasileira de Física (SBF)false
dc.title.none.fl_str_mv Characterization of PbTe p - n+ junction grown by molecular beam epitaxy
title Characterization of PbTe p - n+ junction grown by molecular beam epitaxy
spellingShingle Characterization of PbTe p - n+ junction grown by molecular beam epitaxy
Barros,A.S.
title_short Characterization of PbTe p - n+ junction grown by molecular beam epitaxy
title_full Characterization of PbTe p - n+ junction grown by molecular beam epitaxy
title_fullStr Characterization of PbTe p - n+ junction grown by molecular beam epitaxy
title_full_unstemmed Characterization of PbTe p - n+ junction grown by molecular beam epitaxy
title_sort Characterization of PbTe p - n+ junction grown by molecular beam epitaxy
author Barros,A.S.
author_facet Barros,A.S.
Abramof,E.
Rappl,P.H.O.
Ueta,A.Y.
Closs,H.
author_role author
author2 Abramof,E.
Rappl,P.H.O.
Ueta,A.Y.
Closs,H.
author2_role author
author
author
author
dc.contributor.author.fl_str_mv Barros,A.S.
Abramof,E.
Rappl,P.H.O.
Ueta,A.Y.
Closs,H.
description In this work we investigate the electrical properties of PbTe p - n+ junction. Mesa diodes were fabricated from p - n+ PbTe layers grown on (111) BaF2 substrates by molecular beam epitaxy. From the analysis of the current versus voltage characteristic measured at 80K, the incremental differential resistance and the series resistance were determined. The capacitance versus voltage curves were measured at a frequency of 1MHz. The one-sided abrupt junction was checked through the 1/C²xV plot. From the linear fit, the hole concentration and the depletion layer width in the p-side were obtained. The high detectivity values measured for the p - n+ PbTe diode confirm that it is very suitable for infrared detection.
publishDate 2004
dc.date.none.fl_str_mv 2004-06-01
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332004000400029
url http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332004000400029
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv 10.1590/S0103-97332004000400029
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv text/html
dc.publisher.none.fl_str_mv Sociedade Brasileira de Física
publisher.none.fl_str_mv Sociedade Brasileira de Física
dc.source.none.fl_str_mv Brazilian Journal of Physics v.34 n.2b 2004
reponame:Brazilian Journal of Physics
instname:Sociedade Brasileira de Física (SBF)
instacron:SBF
instname_str Sociedade Brasileira de Física (SBF)
instacron_str SBF
institution SBF
reponame_str Brazilian Journal of Physics
collection Brazilian Journal of Physics
repository.name.fl_str_mv Brazilian Journal of Physics - Sociedade Brasileira de Física (SBF)
repository.mail.fl_str_mv sbfisica@sbfisica.org.br||sbfisica@sbfisica.org.br
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