Highly ordered amorphous silicon-carbon alloys obtained by RF PECVD
Autor(a) principal: | |
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Data de Publicação: | 2000 |
Outros Autores: | , , , |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Brazilian Journal of Physics |
Texto Completo: | http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332000000300009 |
Resumo: | We have shown that close to stoichiometry RF PECVD amorphous silicon carbon alloys deposited under silane starving plasma conditions exhibit a tendency towards c-SiC chemical order. Motivated by this trend, we further explore the effect of increasing RF power and H2 dilution of the gaseous mixtures, aiming to obtain the amorphous counterpart of c-SiC by the RF-PECVD technique. Doping experiments were also performed on ordered material using phosphorus and nitrogen as donor impurities and boron and aluminum as acceptor ones. For nitrogen a doping efficiency close to device quality a-Si:H was obtained, the lower activation energy being 0,12 eV with room temperature dark conductivity of 2.10-3 (omega.cm). Nitrogen doping efficiency was higher than phosphorous for all studied samples. For p-type doping, results indicate that, even though the attained conductivity values are not device levels, aluminum doping conducted to a promising shift in the Fermi level. Also, aluminum resulted a more efficient acceptor than boron, in accordance to observations in crystalline SiC material. |
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Brazilian Journal of Physics |
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Highly ordered amorphous silicon-carbon alloys obtained by RF PECVDWe have shown that close to stoichiometry RF PECVD amorphous silicon carbon alloys deposited under silane starving plasma conditions exhibit a tendency towards c-SiC chemical order. Motivated by this trend, we further explore the effect of increasing RF power and H2 dilution of the gaseous mixtures, aiming to obtain the amorphous counterpart of c-SiC by the RF-PECVD technique. Doping experiments were also performed on ordered material using phosphorus and nitrogen as donor impurities and boron and aluminum as acceptor ones. For nitrogen a doping efficiency close to device quality a-Si:H was obtained, the lower activation energy being 0,12 eV with room temperature dark conductivity of 2.10-3 (omega.cm). Nitrogen doping efficiency was higher than phosphorous for all studied samples. For p-type doping, results indicate that, even though the attained conductivity values are not device levels, aluminum doping conducted to a promising shift in the Fermi level. Also, aluminum resulted a more efficient acceptor than boron, in accordance to observations in crystalline SiC material.Sociedade Brasileira de Física2000-01-01info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersiontext/htmlhttp://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332000000300009Brazilian Journal of Physics v.30 n.3 2000reponame:Brazilian Journal of Physicsinstname:Sociedade Brasileira de Física (SBF)instacron:SBF10.1590/S0103-97332000000300009info:eu-repo/semantics/openAccessPereyra,I.Villacorta,C. A.Carreño,M.N.P.Prado,R.J.Fantini,M.C.A.eng2002-01-11T00:00:00Zoai:scielo:S0103-97332000000300009Revistahttp://www.sbfisica.org.br/v1/home/index.php/pt/ONGhttps://old.scielo.br/oai/scielo-oai.phpsbfisica@sbfisica.org.br||sbfisica@sbfisica.org.br1678-44480103-9733opendoar:2002-01-11T00:00Brazilian Journal of Physics - Sociedade Brasileira de Física (SBF)false |
dc.title.none.fl_str_mv |
Highly ordered amorphous silicon-carbon alloys obtained by RF PECVD |
title |
Highly ordered amorphous silicon-carbon alloys obtained by RF PECVD |
spellingShingle |
Highly ordered amorphous silicon-carbon alloys obtained by RF PECVD Pereyra,I. |
title_short |
Highly ordered amorphous silicon-carbon alloys obtained by RF PECVD |
title_full |
Highly ordered amorphous silicon-carbon alloys obtained by RF PECVD |
title_fullStr |
Highly ordered amorphous silicon-carbon alloys obtained by RF PECVD |
title_full_unstemmed |
Highly ordered amorphous silicon-carbon alloys obtained by RF PECVD |
title_sort |
Highly ordered amorphous silicon-carbon alloys obtained by RF PECVD |
author |
Pereyra,I. |
author_facet |
Pereyra,I. Villacorta,C. A. Carreño,M.N.P. Prado,R.J. Fantini,M.C.A. |
author_role |
author |
author2 |
Villacorta,C. A. Carreño,M.N.P. Prado,R.J. Fantini,M.C.A. |
author2_role |
author author author author |
dc.contributor.author.fl_str_mv |
Pereyra,I. Villacorta,C. A. Carreño,M.N.P. Prado,R.J. Fantini,M.C.A. |
description |
We have shown that close to stoichiometry RF PECVD amorphous silicon carbon alloys deposited under silane starving plasma conditions exhibit a tendency towards c-SiC chemical order. Motivated by this trend, we further explore the effect of increasing RF power and H2 dilution of the gaseous mixtures, aiming to obtain the amorphous counterpart of c-SiC by the RF-PECVD technique. Doping experiments were also performed on ordered material using phosphorus and nitrogen as donor impurities and boron and aluminum as acceptor ones. For nitrogen a doping efficiency close to device quality a-Si:H was obtained, the lower activation energy being 0,12 eV with room temperature dark conductivity of 2.10-3 (omega.cm). Nitrogen doping efficiency was higher than phosphorous for all studied samples. For p-type doping, results indicate that, even though the attained conductivity values are not device levels, aluminum doping conducted to a promising shift in the Fermi level. Also, aluminum resulted a more efficient acceptor than boron, in accordance to observations in crystalline SiC material. |
publishDate |
2000 |
dc.date.none.fl_str_mv |
2000-01-01 |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/article |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
format |
article |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332000000300009 |
url |
http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332000000300009 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
10.1590/S0103-97332000000300009 |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
text/html |
dc.publisher.none.fl_str_mv |
Sociedade Brasileira de Física |
publisher.none.fl_str_mv |
Sociedade Brasileira de Física |
dc.source.none.fl_str_mv |
Brazilian Journal of Physics v.30 n.3 2000 reponame:Brazilian Journal of Physics instname:Sociedade Brasileira de Física (SBF) instacron:SBF |
instname_str |
Sociedade Brasileira de Física (SBF) |
instacron_str |
SBF |
institution |
SBF |
reponame_str |
Brazilian Journal of Physics |
collection |
Brazilian Journal of Physics |
repository.name.fl_str_mv |
Brazilian Journal of Physics - Sociedade Brasileira de Física (SBF) |
repository.mail.fl_str_mv |
sbfisica@sbfisica.org.br||sbfisica@sbfisica.org.br |
_version_ |
1754734859117395968 |