Electrical field effects in n-type MOSFET and metal–nonmetal transition

Detalhes bibliográficos
Autor(a) principal: Almeida, J. Souza de
Data de Publicação: 2002
Outros Autores: Araújo, Carlos Moysés, Pepe, Iuri Muniz, Silva, A. Ferreira da
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Institucional da UFBA
Texto Completo: http://www.repositorio.ufba.br/ri/handle/ri/7535
Resumo: Texto completo: acesso restrito. p. 371–373
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spelling Almeida, J. Souza deAraújo, Carlos MoysésPepe, Iuri MunizSilva, A. Ferreira daAlmeida, J. Souza deAraújo, Carlos MoysésPepe, Iuri MunizSilva, A. Ferreira da2012-12-14T13:17:11Z2002-040026-2692http://www.repositorio.ufba.br/ri/handle/ri/7535v. 33, n. 4Texto completo: acesso restrito. p. 371–373The effects of disorder, correlation, external electric field, impurity concentration, and impurity location near and at the Si/SiO2 interface of a metal-oxide semiconductor field effect transistor (MOSFET), have been investigated. The binding and correlation energies are strongly dependent on the electric field and impurity location. The Hubbard–Mott like model provides further evidence of a MNM transition in agreement with recent experimental findings.Submitted by Suelen Reis (suelen_suzane@hotmail.com) on 2012-12-14T13:17:11Z No. of bitstreams: 1 1-s2.0-S0026269201001343-main.pdf: 99403 bytes, checksum: d91a31eb3cc9c9b824761580a3394251 (MD5)Made available in DSpace on 2012-12-14T13:17:11Z (GMT). No. of bitstreams: 1 1-s2.0-S0026269201001343-main.pdf: 99403 bytes, checksum: d91a31eb3cc9c9b824761580a3394251 (MD5) Previous issue date: 2002-04http://dx.doi.org/10.1016/S0026-2692(01)00134-3reponame:Repositório Institucional da UFBAinstname:Universidade Federal da Bahia (UFBA)instacron:UFBAMetal–nonmetal transitionElectric fieldMetal-oxide semiconductor field effect transistorsElectrical field effects in n-type MOSFET and metal–nonmetal transitionMicroelectronics Journalinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/article10000-01-01enginfo:eu-repo/semantics/openAccessORIGINAL1-s2.0-S0026269201001343-main.pdf1-s2.0-S0026269201001343-main.pdfapplication/pdf99403https://repositorio.ufba.br/bitstream/ri/7535/1/1-s2.0-S0026269201001343-main.pdfd91a31eb3cc9c9b824761580a3394251MD51LICENSElicense.txtlicense.txttext/plain1762https://repositorio.ufba.br/bitstream/ri/7535/2/license.txt1b89a9a0548218172d7c829f87a0eab9MD52TEXT1-s2.0-S0026269201001343-main.pdf.txt1-s2.0-S0026269201001343-main.pdf.txtExtracted texttext/plain9697https://repositorio.ufba.br/bitstream/ri/7535/3/1-s2.0-S0026269201001343-main.pdf.txtd147cfb3b4af25960445608fbe0e1486MD53ri/75352022-08-26 11:02:28.498oai:repositorio.ufba.br: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Repositório InstitucionalPUBhttp://192.188.11.11:8080/oai/requestopendoar:19322022-08-26T14:02:28Repositório Institucional da UFBA - Universidade Federal da Bahia (UFBA)false
dc.title.pt_BR.fl_str_mv Electrical field effects in n-type MOSFET and metal–nonmetal transition
dc.title.alternative.pt_BR.fl_str_mv Microelectronics Journal
title Electrical field effects in n-type MOSFET and metal–nonmetal transition
spellingShingle Electrical field effects in n-type MOSFET and metal–nonmetal transition
Almeida, J. Souza de
Metal–nonmetal transition
Electric field
Metal-oxide semiconductor field effect transistors
title_short Electrical field effects in n-type MOSFET and metal–nonmetal transition
title_full Electrical field effects in n-type MOSFET and metal–nonmetal transition
title_fullStr Electrical field effects in n-type MOSFET and metal–nonmetal transition
title_full_unstemmed Electrical field effects in n-type MOSFET and metal–nonmetal transition
title_sort Electrical field effects in n-type MOSFET and metal–nonmetal transition
author Almeida, J. Souza de
author_facet Almeida, J. Souza de
Araújo, Carlos Moysés
Pepe, Iuri Muniz
Silva, A. Ferreira da
author_role author
author2 Araújo, Carlos Moysés
Pepe, Iuri Muniz
Silva, A. Ferreira da
author2_role author
author
author
dc.contributor.author.fl_str_mv Almeida, J. Souza de
Araújo, Carlos Moysés
Pepe, Iuri Muniz
Silva, A. Ferreira da
Almeida, J. Souza de
Araújo, Carlos Moysés
Pepe, Iuri Muniz
Silva, A. Ferreira da
dc.subject.por.fl_str_mv Metal–nonmetal transition
Electric field
Metal-oxide semiconductor field effect transistors
topic Metal–nonmetal transition
Electric field
Metal-oxide semiconductor field effect transistors
description Texto completo: acesso restrito. p. 371–373
publishDate 2002
dc.date.issued.fl_str_mv 2002-04
dc.date.accessioned.fl_str_mv 2012-12-14T13:17:11Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://www.repositorio.ufba.br/ri/handle/ri/7535
dc.identifier.issn.none.fl_str_mv 0026-2692
dc.identifier.number.pt_BR.fl_str_mv v. 33, n. 4
identifier_str_mv 0026-2692
v. 33, n. 4
url http://www.repositorio.ufba.br/ri/handle/ri/7535
dc.language.iso.fl_str_mv eng
language eng
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.source.pt_BR.fl_str_mv http://dx.doi.org/10.1016/S0026-2692(01)00134-3
dc.source.none.fl_str_mv reponame:Repositório Institucional da UFBA
instname:Universidade Federal da Bahia (UFBA)
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reponame_str Repositório Institucional da UFBA
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