Electrical resistivity and band-gap shift of Si-doped GaN and metal-nonmetal transition in cubic GaN, InN and AlN systems

Detalhes bibliográficos
Autor(a) principal: Fernandez, J. R. L.
Data de Publicação: 2001
Outros Autores: Araújo, Carlos Moysés, Silva, A. Ferreira da, Leite, J. R., Sernelius, Bo E., Pepe, Iuri Muniz
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Institucional da UFBA
Texto Completo: http://www.repositorio.ufba.br/ri/handle/ri/7671
Resumo: Texto completo: acesso restrito. p. 420–427
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spelling Fernandez, J. R. L.Araújo, Carlos MoysésSilva, A. Ferreira daLeite, J. R.Sernelius, Bo E.Pepe, Iuri MunizFernandez, J. R. L.Araújo, Carlos MoysésSilva, A. Ferreira daLeite, J. R.Sernelius, Bo E.Pepe, Iuri Muniz2012-12-19T16:08:03Z20010022-0248http://www.repositorio.ufba.br/ri/handle/ri/7671v. 231, n. 3Texto completo: acesso restrito. p. 420–427The critical impurity concentration Nc of the metal–nonmetal (MNM) transition for the cubic GaN, InN and AlN systems, is calculated using the following two different criteria: vanishing of the donor binding energy and the crossing point between the energies in the metallic and insulating phases. A dielectric function model with a Lorentz–Lorenz correction is used for the insulating phase. The InN presents an order of magnitude increase in Nc as compared to the other two systems. The electrical resistivity of the Si-donor system GaN is investigated theoretically and experimentally from room temperature down to 10 K. It presents a metallic character above a certain high impurity concentration identified as Nc. The samples were grown by plasma assisted molecular beam epitaxy (MBE) on GaAs (0 0 1) substrate. The model calculation is carried out from a recently proposed generalized Drude approach (GDA) presenting a very good estimation for the metallic region. The band-gap shift (BGS) of Si-doped GaN has also been investigated above the MNM transition where this shift is observed. Theoretical and experimental results have a rough agreement in a range of impurity concentration of interest.Submitted by Suelen Reis (suelen_suzane@hotmail.com) on 2012-12-19T16:08:03Z No. of bitstreams: 1 texto persson 1.pdf: 214916 bytes, checksum: 041422e15b6496c1ad89170febe7e407 (MD5)Made available in DSpace on 2012-12-19T16:08:03Z (GMT). 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NitridesElectrical resistivity and band-gap shift of Si-doped GaN and metal-nonmetal transition in cubic GaN, InN and AlN systemsJournal of Crystal Growthinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/article10000-01-01enginfo:eu-repo/semantics/openAccessORIGINALtexto persson 1.pdftexto persson 1.pdfapplication/pdf214916https://repositorio.ufba.br/bitstream/ri/7671/1/texto%20persson%201.pdf041422e15b6496c1ad89170febe7e407MD51LICENSElicense.txtlicense.txttext/plain1762https://repositorio.ufba.br/bitstream/ri/7671/2/license.txt1b89a9a0548218172d7c829f87a0eab9MD52TEXTtexto persson 1.pdf.txttexto persson 1.pdf.txtExtracted texttext/plain20235https://repositorio.ufba.br/bitstream/ri/7671/3/texto%20persson%201.pdf.txt30951a74e91ce3a45d9f708737951c6cMD53ri/76712022-07-05 14:03:47.575oai:repositorio.ufba.br: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Repositório InstitucionalPUBhttp://192.188.11.11:8080/oai/requestopendoar:19322022-07-05T17:03:47Repositório Institucional da UFBA - Universidade Federal da Bahia (UFBA)false
dc.title.pt_BR.fl_str_mv Electrical resistivity and band-gap shift of Si-doped GaN and metal-nonmetal transition in cubic GaN, InN and AlN systems
dc.title.alternative.pt_BR.fl_str_mv Journal of Crystal Growth
title Electrical resistivity and band-gap shift of Si-doped GaN and metal-nonmetal transition in cubic GaN, InN and AlN systems
spellingShingle Electrical resistivity and band-gap shift of Si-doped GaN and metal-nonmetal transition in cubic GaN, InN and AlN systems
Fernandez, J. R. L.
A1. Characterization
A1. Doping
A3. Molecular beam epitaxy
B1. Nitrides
title_short Electrical resistivity and band-gap shift of Si-doped GaN and metal-nonmetal transition in cubic GaN, InN and AlN systems
title_full Electrical resistivity and band-gap shift of Si-doped GaN and metal-nonmetal transition in cubic GaN, InN and AlN systems
title_fullStr Electrical resistivity and band-gap shift of Si-doped GaN and metal-nonmetal transition in cubic GaN, InN and AlN systems
title_full_unstemmed Electrical resistivity and band-gap shift of Si-doped GaN and metal-nonmetal transition in cubic GaN, InN and AlN systems
title_sort Electrical resistivity and band-gap shift of Si-doped GaN and metal-nonmetal transition in cubic GaN, InN and AlN systems
author Fernandez, J. R. L.
author_facet Fernandez, J. R. L.
Araújo, Carlos Moysés
Silva, A. Ferreira da
Leite, J. R.
Sernelius, Bo E.
Pepe, Iuri Muniz
author_role author
author2 Araújo, Carlos Moysés
Silva, A. Ferreira da
Leite, J. R.
Sernelius, Bo E.
Pepe, Iuri Muniz
author2_role author
author
author
author
author
dc.contributor.author.fl_str_mv Fernandez, J. R. L.
Araújo, Carlos Moysés
Silva, A. Ferreira da
Leite, J. R.
Sernelius, Bo E.
Pepe, Iuri Muniz
Fernandez, J. R. L.
Araújo, Carlos Moysés
Silva, A. Ferreira da
Leite, J. R.
Sernelius, Bo E.
Pepe, Iuri Muniz
dc.subject.por.fl_str_mv A1. Characterization
A1. Doping
A3. Molecular beam epitaxy
B1. Nitrides
topic A1. Characterization
A1. Doping
A3. Molecular beam epitaxy
B1. Nitrides
description Texto completo: acesso restrito. p. 420–427
publishDate 2001
dc.date.issued.fl_str_mv 2001
dc.date.accessioned.fl_str_mv 2012-12-19T16:08:03Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://www.repositorio.ufba.br/ri/handle/ri/7671
dc.identifier.issn.none.fl_str_mv 0022-0248
dc.identifier.number.pt_BR.fl_str_mv v. 231, n. 3
identifier_str_mv 0022-0248
v. 231, n. 3
url http://www.repositorio.ufba.br/ri/handle/ri/7671
dc.language.iso.fl_str_mv eng
language eng
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
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