Effects of heavy Si doping on the structural and optical properties of n-GaN/AlN/Si(111) heterostructures

• Autor(a) principal: Zambrano-Serrano, Mario Alberto
• Data de Publicação: 2022
• Outros Autores: Hernandez-Gutierrez, Carlos Alberto, Melo, Osvaldo de, Behar, Moni, Gallardo-Hernández, Salvador, Casallas-Moreno, Yenny Lucero, Ponce, Arturo, Hernandez-Robles, Andrei, Uribe, Daniel Bahena, Yee-Rendon, Cristo, López-López, Maximo
• Tipo de documento: Artigo
• Idioma: eng
• Título da fonte: Repositório Institucional da UFRGS
• Texto Completo: http://hdl.handle.net/10183/249596
• topic: Dopagem; Espectrometria de retroespalhamento rutherford; Microscopia eletrônica de transmissão; Nitreto de gálio; Silício; GaN; Molecular beam epitaxy; Heteroepitaxy; Silicon; Si-doping; Crystal defects; RBS

n-GaN/ AlN heterostructures were grown by molecular beam epitaxy on Si(111)substrates.The GaN films were n-type doped with silicon and the effect of doping concentration on the structural and optical properties was studied. Si doping promotes a reduction of dislocation density as revealed by x-ray data analysis and Transmission Electron Microscopy. Furthermore, a decrease in the yellow band measured by Photoluminescence Spectroscopy was observed when silicon doping concentration was increased up to 1.7 × 1019 atoms cm−3 . A particular mosaic structure was induced by the Si doping as inferred from Rutherford Backscattering measurements. The crystal quality shows a small degradation for very heavily doped samples(1.3 × 1020 atoms cm−3 ).