Effects of heavy Si doping on the structural and optical properties of n-GaN/AlN/Si(111) heterostructures
Autor(a) principal: | |
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Data de Publicação: | 2022 |
Outros Autores: | , , , , , , , , , |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Repositório Institucional da UFRGS |
Texto Completo: | http://hdl.handle.net/10183/249596 |
Resumo: | n-GaN/ AlN heterostructures were grown by molecular beam epitaxy on Si(111)substrates.The GaN films were n-type doped with silicon and the effect of doping concentration on the structural and optical properties was studied. Si doping promotes a reduction of dislocation density as revealed by x-ray data analysis and Transmission Electron Microscopy. Furthermore, a decrease in the yellow band measured by Photoluminescence Spectroscopy was observed when silicon doping concentration was increased up to 1.7 × 1019 atoms cm−3 . A particular mosaic structure was induced by the Si doping as inferred from Rutherford Backscattering measurements. The crystal quality shows a small degradation for very heavily doped samples(1.3 × 1020 atoms cm−3 ). |
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Zambrano-Serrano, Mario AlbertoHernandez-Gutierrez, Carlos AlbertoMelo, Osvaldo deBehar, MoniGallardo-Hernández, SalvadorCasallas-Moreno, Yenny LuceroPonce, ArturoHernandez-Robles, AndreiUribe, Daniel BahenaYee-Rendon, CristoLópez-López, Maximo2022-10-03T04:48:53Z20222053-1591http://hdl.handle.net/10183/249596001144650n-GaN/ AlN heterostructures were grown by molecular beam epitaxy on Si(111)substrates.The GaN films were n-type doped with silicon and the effect of doping concentration on the structural and optical properties was studied. Si doping promotes a reduction of dislocation density as revealed by x-ray data analysis and Transmission Electron Microscopy. Furthermore, a decrease in the yellow band measured by Photoluminescence Spectroscopy was observed when silicon doping concentration was increased up to 1.7 × 1019 atoms cm−3 . A particular mosaic structure was induced by the Si doping as inferred from Rutherford Backscattering measurements. The crystal quality shows a small degradation for very heavily doped samples(1.3 × 1020 atoms cm−3 ).application/pdfengMaterials Research Express. Bristol. Vol. 9, no. 6 (June 2022), 065903, 8 p.DopagemEspectrometria de retroespalhamento rutherfordMicroscopia eletrônica de transmissãoNitreto de gálioSilícioGaNMolecular beam epitaxyHeteroepitaxySiliconSi-dopingCrystal defectsRBSEffects of heavy Si doping on the structural and optical properties of n-GaN/AlN/Si(111) heterostructuresEstrangeiroinfo:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/openAccessreponame:Repositório Institucional da UFRGSinstname:Universidade Federal do Rio Grande do Sul (UFRGS)instacron:UFRGSTEXT001144650.pdf.txt001144650.pdf.txtExtracted Texttext/plain24255http://www.lume.ufrgs.br/bitstream/10183/249596/2/001144650.pdf.txta0ca514ca7fa8d9e8c092740563d6417MD52ORIGINAL001144650.pdfTexto completo (inglês)application/pdf1577401http://www.lume.ufrgs.br/bitstream/10183/249596/1/001144650.pdfb17806fc36d02d2e2cd5c1deae01a018MD5110183/2495962022-10-04 05:00:57.08192oai:www.lume.ufrgs.br:10183/249596Repositório de PublicaçõesPUBhttps://lume.ufrgs.br/oai/requestopendoar:2022-10-04T08:00:57Repositório Institucional da UFRGS - Universidade Federal do Rio Grande do Sul (UFRGS)false |
dc.title.pt_BR.fl_str_mv |
Effects of heavy Si doping on the structural and optical properties of n-GaN/AlN/Si(111) heterostructures |
title |
Effects of heavy Si doping on the structural and optical properties of n-GaN/AlN/Si(111) heterostructures |
spellingShingle |
Effects of heavy Si doping on the structural and optical properties of n-GaN/AlN/Si(111) heterostructures Zambrano-Serrano, Mario Alberto Dopagem Espectrometria de retroespalhamento rutherford Microscopia eletrônica de transmissão Nitreto de gálio Silício GaN Molecular beam epitaxy Heteroepitaxy Silicon Si-doping Crystal defects RBS |
title_short |
Effects of heavy Si doping on the structural and optical properties of n-GaN/AlN/Si(111) heterostructures |
title_full |
Effects of heavy Si doping on the structural and optical properties of n-GaN/AlN/Si(111) heterostructures |
title_fullStr |
Effects of heavy Si doping on the structural and optical properties of n-GaN/AlN/Si(111) heterostructures |
title_full_unstemmed |
Effects of heavy Si doping on the structural and optical properties of n-GaN/AlN/Si(111) heterostructures |
title_sort |
Effects of heavy Si doping on the structural and optical properties of n-GaN/AlN/Si(111) heterostructures |
author |
Zambrano-Serrano, Mario Alberto |
author_facet |
Zambrano-Serrano, Mario Alberto Hernandez-Gutierrez, Carlos Alberto Melo, Osvaldo de Behar, Moni Gallardo-Hernández, Salvador Casallas-Moreno, Yenny Lucero Ponce, Arturo Hernandez-Robles, Andrei Uribe, Daniel Bahena Yee-Rendon, Cristo López-López, Maximo |
author_role |
author |
author2 |
Hernandez-Gutierrez, Carlos Alberto Melo, Osvaldo de Behar, Moni Gallardo-Hernández, Salvador Casallas-Moreno, Yenny Lucero Ponce, Arturo Hernandez-Robles, Andrei Uribe, Daniel Bahena Yee-Rendon, Cristo López-López, Maximo |
author2_role |
author author author author author author author author author author |
dc.contributor.author.fl_str_mv |
Zambrano-Serrano, Mario Alberto Hernandez-Gutierrez, Carlos Alberto Melo, Osvaldo de Behar, Moni Gallardo-Hernández, Salvador Casallas-Moreno, Yenny Lucero Ponce, Arturo Hernandez-Robles, Andrei Uribe, Daniel Bahena Yee-Rendon, Cristo López-López, Maximo |
dc.subject.por.fl_str_mv |
Dopagem Espectrometria de retroespalhamento rutherford Microscopia eletrônica de transmissão Nitreto de gálio Silício |
topic |
Dopagem Espectrometria de retroespalhamento rutherford Microscopia eletrônica de transmissão Nitreto de gálio Silício GaN Molecular beam epitaxy Heteroepitaxy Silicon Si-doping Crystal defects RBS |
dc.subject.eng.fl_str_mv |
GaN Molecular beam epitaxy Heteroepitaxy Silicon Si-doping Crystal defects RBS |
description |
n-GaN/ AlN heterostructures were grown by molecular beam epitaxy on Si(111)substrates.The GaN films were n-type doped with silicon and the effect of doping concentration on the structural and optical properties was studied. Si doping promotes a reduction of dislocation density as revealed by x-ray data analysis and Transmission Electron Microscopy. Furthermore, a decrease in the yellow band measured by Photoluminescence Spectroscopy was observed when silicon doping concentration was increased up to 1.7 × 1019 atoms cm−3 . A particular mosaic structure was induced by the Si doping as inferred from Rutherford Backscattering measurements. The crystal quality shows a small degradation for very heavily doped samples(1.3 × 1020 atoms cm−3 ). |
publishDate |
2022 |
dc.date.accessioned.fl_str_mv |
2022-10-03T04:48:53Z |
dc.date.issued.fl_str_mv |
2022 |
dc.type.driver.fl_str_mv |
Estrangeiro info:eu-repo/semantics/article |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
format |
article |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://hdl.handle.net/10183/249596 |
dc.identifier.issn.pt_BR.fl_str_mv |
2053-1591 |
dc.identifier.nrb.pt_BR.fl_str_mv |
001144650 |
identifier_str_mv |
2053-1591 001144650 |
url |
http://hdl.handle.net/10183/249596 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.ispartof.pt_BR.fl_str_mv |
Materials Research Express. Bristol. Vol. 9, no. 6 (June 2022), 065903, 8 p. |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
application/pdf |
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