Characterization of deep level traps responsible for isolation of proton implanted GaAs

Detalhes bibliográficos
Autor(a) principal: Boudinov, Henri Ivanov
Data de Publicação: 2003
Outros Autores: Coelho, Artur Vicente Pfeifer, Tan, Hoe H., Jagadish, Chenupati
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Institucional da UFRGS
Texto Completo: http://hdl.handle.net/10183/95823
Resumo: Deep level transient spectroscopy was employed to determine the electrical properties of defects induced in metalorganic chemical-vapor deposition grown n-type and p-type GaAs during proton bombardment. Thermal stability of these defects was investigated and correlation with defects responsible for isolation of GaAs by ion bombardment was discussed. The annealing temperature region (220–250°C) is similar to proton isolated GaAs below the threshold dose for complete isolation. At least four of the five traps observed in n-type GaAs are not simple interstitial-vacancy pairs. For p-type GaAs we have observed an unknown level with apparent energy of ~0.64 eV.
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spelling Boudinov, Henri IvanovCoelho, Artur Vicente PfeiferTan, Hoe H.Jagadish, Chenupati2014-05-31T02:06:43Z20030021-8979http://hdl.handle.net/10183/95823000357067Deep level transient spectroscopy was employed to determine the electrical properties of defects induced in metalorganic chemical-vapor deposition grown n-type and p-type GaAs during proton bombardment. Thermal stability of these defects was investigated and correlation with defects responsible for isolation of GaAs by ion bombardment was discussed. The annealing temperature region (220–250°C) is similar to proton isolated GaAs below the threshold dose for complete isolation. At least four of the five traps observed in n-type GaAs are not simple interstitial-vacancy pairs. For p-type GaAs we have observed an unknown level with apparent energy of ~0.64 eV.application/pdfengJournal of applied physics. Melville. Vol. 93, no. 6 (Mar. 2003), p. 3234-3238Níveis profundosSemicondutores iii-vImplantacao ionicaEstabilidade térmicaCharacterization of deep level traps responsible for isolation of proton implanted GaAsEstrangeiroinfo:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/openAccessreponame:Repositório Institucional da UFRGSinstname:Universidade Federal do Rio Grande do Sul (UFRGS)instacron:UFRGSORIGINAL000357067.pdf000357067.pdfTexto completo (inglês)application/pdf240018http://www.lume.ufrgs.br/bitstream/10183/95823/1/000357067.pdfddd1e50c5e10e91dab1674823ba69be1MD51TEXT000357067.pdf.txt000357067.pdf.txtExtracted Texttext/plain20853http://www.lume.ufrgs.br/bitstream/10183/95823/2/000357067.pdf.txt3897cd8560f69559c3679199cc9e5d00MD52THUMBNAIL000357067.pdf.jpg000357067.pdf.jpgGenerated Thumbnailimage/jpeg1568http://www.lume.ufrgs.br/bitstream/10183/95823/3/000357067.pdf.jpge064b67d4f3f41d6ebc5e8b48ab19fa6MD5310183/958232018-10-15 08:19:39.528oai:www.lume.ufrgs.br:10183/95823Repositório de PublicaçõesPUBhttps://lume.ufrgs.br/oai/requestopendoar:2018-10-15T11:19:39Repositório Institucional da UFRGS - Universidade Federal do Rio Grande do Sul (UFRGS)false
dc.title.pt_BR.fl_str_mv Characterization of deep level traps responsible for isolation of proton implanted GaAs
title Characterization of deep level traps responsible for isolation of proton implanted GaAs
spellingShingle Characterization of deep level traps responsible for isolation of proton implanted GaAs
Boudinov, Henri Ivanov
Níveis profundos
Semicondutores iii-v
Implantacao ionica
Estabilidade térmica
title_short Characterization of deep level traps responsible for isolation of proton implanted GaAs
title_full Characterization of deep level traps responsible for isolation of proton implanted GaAs
title_fullStr Characterization of deep level traps responsible for isolation of proton implanted GaAs
title_full_unstemmed Characterization of deep level traps responsible for isolation of proton implanted GaAs
title_sort Characterization of deep level traps responsible for isolation of proton implanted GaAs
author Boudinov, Henri Ivanov
author_facet Boudinov, Henri Ivanov
Coelho, Artur Vicente Pfeifer
Tan, Hoe H.
Jagadish, Chenupati
author_role author
author2 Coelho, Artur Vicente Pfeifer
Tan, Hoe H.
Jagadish, Chenupati
author2_role author
author
author
dc.contributor.author.fl_str_mv Boudinov, Henri Ivanov
Coelho, Artur Vicente Pfeifer
Tan, Hoe H.
Jagadish, Chenupati
dc.subject.por.fl_str_mv Níveis profundos
Semicondutores iii-v
Implantacao ionica
Estabilidade térmica
topic Níveis profundos
Semicondutores iii-v
Implantacao ionica
Estabilidade térmica
description Deep level transient spectroscopy was employed to determine the electrical properties of defects induced in metalorganic chemical-vapor deposition grown n-type and p-type GaAs during proton bombardment. Thermal stability of these defects was investigated and correlation with defects responsible for isolation of GaAs by ion bombardment was discussed. The annealing temperature region (220–250°C) is similar to proton isolated GaAs below the threshold dose for complete isolation. At least four of the five traps observed in n-type GaAs are not simple interstitial-vacancy pairs. For p-type GaAs we have observed an unknown level with apparent energy of ~0.64 eV.
publishDate 2003
dc.date.issued.fl_str_mv 2003
dc.date.accessioned.fl_str_mv 2014-05-31T02:06:43Z
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dc.identifier.issn.pt_BR.fl_str_mv 0021-8979
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dc.language.iso.fl_str_mv eng
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dc.relation.ispartof.pt_BR.fl_str_mv Journal of applied physics. Melville. Vol. 93, no. 6 (Mar. 2003), p. 3234-3238
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