Characterization of deep level traps responsible for isolation of proton implanted GaAs
Autor(a) principal: | |
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Data de Publicação: | 2003 |
Outros Autores: | , , |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Repositório Institucional da UFRGS |
Texto Completo: | http://hdl.handle.net/10183/95823 |
Resumo: | Deep level transient spectroscopy was employed to determine the electrical properties of defects induced in metalorganic chemical-vapor deposition grown n-type and p-type GaAs during proton bombardment. Thermal stability of these defects was investigated and correlation with defects responsible for isolation of GaAs by ion bombardment was discussed. The annealing temperature region (220–250°C) is similar to proton isolated GaAs below the threshold dose for complete isolation. At least four of the five traps observed in n-type GaAs are not simple interstitial-vacancy pairs. For p-type GaAs we have observed an unknown level with apparent energy of ~0.64 eV. |
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Boudinov, Henri IvanovCoelho, Artur Vicente PfeiferTan, Hoe H.Jagadish, Chenupati2014-05-31T02:06:43Z20030021-8979http://hdl.handle.net/10183/95823000357067Deep level transient spectroscopy was employed to determine the electrical properties of defects induced in metalorganic chemical-vapor deposition grown n-type and p-type GaAs during proton bombardment. Thermal stability of these defects was investigated and correlation with defects responsible for isolation of GaAs by ion bombardment was discussed. The annealing temperature region (220–250°C) is similar to proton isolated GaAs below the threshold dose for complete isolation. At least four of the five traps observed in n-type GaAs are not simple interstitial-vacancy pairs. For p-type GaAs we have observed an unknown level with apparent energy of ~0.64 eV.application/pdfengJournal of applied physics. Melville. Vol. 93, no. 6 (Mar. 2003), p. 3234-3238Níveis profundosSemicondutores iii-vImplantacao ionicaEstabilidade térmicaCharacterization of deep level traps responsible for isolation of proton implanted GaAsEstrangeiroinfo:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/openAccessreponame:Repositório Institucional da UFRGSinstname:Universidade Federal do Rio Grande do Sul (UFRGS)instacron:UFRGSORIGINAL000357067.pdf000357067.pdfTexto completo (inglês)application/pdf240018http://www.lume.ufrgs.br/bitstream/10183/95823/1/000357067.pdfddd1e50c5e10e91dab1674823ba69be1MD51TEXT000357067.pdf.txt000357067.pdf.txtExtracted Texttext/plain20853http://www.lume.ufrgs.br/bitstream/10183/95823/2/000357067.pdf.txt3897cd8560f69559c3679199cc9e5d00MD52THUMBNAIL000357067.pdf.jpg000357067.pdf.jpgGenerated Thumbnailimage/jpeg1568http://www.lume.ufrgs.br/bitstream/10183/95823/3/000357067.pdf.jpge064b67d4f3f41d6ebc5e8b48ab19fa6MD5310183/958232018-10-15 08:19:39.528oai:www.lume.ufrgs.br:10183/95823Repositório de PublicaçõesPUBhttps://lume.ufrgs.br/oai/requestopendoar:2018-10-15T11:19:39Repositório Institucional da UFRGS - Universidade Federal do Rio Grande do Sul (UFRGS)false |
dc.title.pt_BR.fl_str_mv |
Characterization of deep level traps responsible for isolation of proton implanted GaAs |
title |
Characterization of deep level traps responsible for isolation of proton implanted GaAs |
spellingShingle |
Characterization of deep level traps responsible for isolation of proton implanted GaAs Boudinov, Henri Ivanov Níveis profundos Semicondutores iii-v Implantacao ionica Estabilidade térmica |
title_short |
Characterization of deep level traps responsible for isolation of proton implanted GaAs |
title_full |
Characterization of deep level traps responsible for isolation of proton implanted GaAs |
title_fullStr |
Characterization of deep level traps responsible for isolation of proton implanted GaAs |
title_full_unstemmed |
Characterization of deep level traps responsible for isolation of proton implanted GaAs |
title_sort |
Characterization of deep level traps responsible for isolation of proton implanted GaAs |
author |
Boudinov, Henri Ivanov |
author_facet |
Boudinov, Henri Ivanov Coelho, Artur Vicente Pfeifer Tan, Hoe H. Jagadish, Chenupati |
author_role |
author |
author2 |
Coelho, Artur Vicente Pfeifer Tan, Hoe H. Jagadish, Chenupati |
author2_role |
author author author |
dc.contributor.author.fl_str_mv |
Boudinov, Henri Ivanov Coelho, Artur Vicente Pfeifer Tan, Hoe H. Jagadish, Chenupati |
dc.subject.por.fl_str_mv |
Níveis profundos Semicondutores iii-v Implantacao ionica Estabilidade térmica |
topic |
Níveis profundos Semicondutores iii-v Implantacao ionica Estabilidade térmica |
description |
Deep level transient spectroscopy was employed to determine the electrical properties of defects induced in metalorganic chemical-vapor deposition grown n-type and p-type GaAs during proton bombardment. Thermal stability of these defects was investigated and correlation with defects responsible for isolation of GaAs by ion bombardment was discussed. The annealing temperature region (220–250°C) is similar to proton isolated GaAs below the threshold dose for complete isolation. At least four of the five traps observed in n-type GaAs are not simple interstitial-vacancy pairs. For p-type GaAs we have observed an unknown level with apparent energy of ~0.64 eV. |
publishDate |
2003 |
dc.date.issued.fl_str_mv |
2003 |
dc.date.accessioned.fl_str_mv |
2014-05-31T02:06:43Z |
dc.type.driver.fl_str_mv |
Estrangeiro info:eu-repo/semantics/article |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
format |
article |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://hdl.handle.net/10183/95823 |
dc.identifier.issn.pt_BR.fl_str_mv |
0021-8979 |
dc.identifier.nrb.pt_BR.fl_str_mv |
000357067 |
identifier_str_mv |
0021-8979 000357067 |
url |
http://hdl.handle.net/10183/95823 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.ispartof.pt_BR.fl_str_mv |
Journal of applied physics. Melville. Vol. 93, no. 6 (Mar. 2003), p. 3234-3238 |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
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application/pdf |
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