3-D TCAD Monte Carlo device simulator : state-of-the-art FinFET simulation

• Autor(a) principal: Furtado, Gabriela Firpo
• Data de Publicação: 2021
• Outros Autores: Camargo, Vinícius Valduga de Almeida, Vasileska, Dragica, Wirth, Gilson Inacio
• Tipo de documento: Artigo
• Idioma: eng
• Título da fonte: Repositório Institucional da UFRGS
• Texto Completo: http://hdl.handle.net/10183/259752
• topic: Simulação computacional; Transistores de efeito de campo; TCAD simulation; Monte Carlo method; Fin-FETs

This work presents a comprehensive description of an in-house 3D Monte Carlo device simulator for physical mod-eling of FinFETs. The simulator was developed to consider var-iability effects properly and to be able to study deeply scaled devices operating in the ballistic and quasi-ballistic regimes. The impact of random dopants and trapped charges in the die-lectric is considered by treating electron-electron and electron-ion interactions in real-space. Metal gate granularity is in-cluded through the gate work functionvariation. The capability to evaluate these effects in nanometer3D devices makes the pre-sented simulator unique, thus advancing the state-of-the-art. The phonon scattering mechanisms, used to model the transport of electrons in puresilicon material system, were validated by comparing simulated drift velocities withavailable experi-mental data. The proper behavior of the device simulator is dis-played in a series of studies of the electric potentialin the device, the electron density, the carrier's energy and velocity, and the Id-Vg and Id-Vd curves.