Study on direct current reactive sputtering deposition of aluminum nitride thin films

Bibliographic Details
Main Author: Stedile, Fernanda Chiarello
Publication Date: 1992
Other Authors: Baumvol, Israel Jacob Rabin, Schreiner, Wido Herwig, Freire Junior, Fernando Leite
Format: Article
Language: eng
Source: Repositório Institucional da UFRGS
Download full: http://hdl.handle.net/10183/204874
Summary: Aluminum nitride thin films were deposited by dc magnetron reactive sputtering. The deposition parameters (cathode voltage, incident power, total pressure, and N2 partial pressure) were correlated and their influences on the compositional properties of the films were determined. The analytical tools used to characterize the aluminum nitride thin films were Rutherford backscattering spectrometry and the (d,p) and (p,y) nuclear reactions. From these techniques the thickness and stoichiometric ratio N/ Al of the films, the N and Al depth profiles, and the contamination levels of 0 and C were obtained.
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spelling Stedile, Fernanda ChiarelloBaumvol, Israel Jacob RabinSchreiner, Wido HerwigFreire Junior, Fernando Leite2020-01-23T04:05:46Z19920734-2101http://hdl.handle.net/10183/204874000056049Aluminum nitride thin films were deposited by dc magnetron reactive sputtering. The deposition parameters (cathode voltage, incident power, total pressure, and N2 partial pressure) were correlated and their influences on the compositional properties of the films were determined. The analytical tools used to characterize the aluminum nitride thin films were Rutherford backscattering spectrometry and the (d,p) and (p,y) nuclear reactions. From these techniques the thickness and stoichiometric ratio N/ Al of the films, the N and Al depth profiles, and the contamination levels of 0 and C were obtained.application/pdfengJournal of Vacuum Science & Technology a : Vacuum, Surfaces and Films. New York. Vol. 10, no. 5 (Sept./Oct. 1992), p. 3272-3277Física da matéria condensadaImplantação de íonsFilmes finosRetroespalhamento rutherfordStudy on direct current reactive sputtering deposition of aluminum nitride thin filmsEstrangeiroinfo:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/openAccessreponame:Repositório Institucional da UFRGSinstname:Universidade Federal do Rio Grande do Sul (UFRGS)instacron:UFRGSTEXT000056049.pdf.txt000056049.pdf.txtExtracted Texttext/plain30050http://www.lume.ufrgs.br/bitstream/10183/204874/2/000056049.pdf.txt0ccc337249bd623a57e3c6a0f4f0536dMD52ORIGINAL000056049.pdfTexto completo (inglês)application/pdf644452http://www.lume.ufrgs.br/bitstream/10183/204874/1/000056049.pdf6034e95a9b95eed006296af0a98c6965MD5110183/2048742022-02-22 05:08:14.540711oai:www.lume.ufrgs.br:10183/204874Repositório de PublicaçõesPUBhttps://lume.ufrgs.br/oai/requestopendoar:2022-02-22T08:08:14Repositório Institucional da UFRGS - Universidade Federal do Rio Grande do Sul (UFRGS)false
dc.title.pt_BR.fl_str_mv Study on direct current reactive sputtering deposition of aluminum nitride thin films
title Study on direct current reactive sputtering deposition of aluminum nitride thin films
spellingShingle Study on direct current reactive sputtering deposition of aluminum nitride thin films
Stedile, Fernanda Chiarello
Física da matéria condensada
Implantação de íons
Filmes finos
Retroespalhamento rutherford
title_short Study on direct current reactive sputtering deposition of aluminum nitride thin films
title_full Study on direct current reactive sputtering deposition of aluminum nitride thin films
title_fullStr Study on direct current reactive sputtering deposition of aluminum nitride thin films
title_full_unstemmed Study on direct current reactive sputtering deposition of aluminum nitride thin films
title_sort Study on direct current reactive sputtering deposition of aluminum nitride thin films
author Stedile, Fernanda Chiarello
author_facet Stedile, Fernanda Chiarello
Baumvol, Israel Jacob Rabin
Schreiner, Wido Herwig
Freire Junior, Fernando Leite
author_role author
author2 Baumvol, Israel Jacob Rabin
Schreiner, Wido Herwig
Freire Junior, Fernando Leite
author2_role author
author
author
dc.contributor.author.fl_str_mv Stedile, Fernanda Chiarello
Baumvol, Israel Jacob Rabin
Schreiner, Wido Herwig
Freire Junior, Fernando Leite
dc.subject.por.fl_str_mv Física da matéria condensada
Implantação de íons
Filmes finos
Retroespalhamento rutherford
topic Física da matéria condensada
Implantação de íons
Filmes finos
Retroespalhamento rutherford
description Aluminum nitride thin films were deposited by dc magnetron reactive sputtering. The deposition parameters (cathode voltage, incident power, total pressure, and N2 partial pressure) were correlated and their influences on the compositional properties of the films were determined. The analytical tools used to characterize the aluminum nitride thin films were Rutherford backscattering spectrometry and the (d,p) and (p,y) nuclear reactions. From these techniques the thickness and stoichiometric ratio N/ Al of the films, the N and Al depth profiles, and the contamination levels of 0 and C were obtained.
publishDate 1992
dc.date.issued.fl_str_mv 1992
dc.date.accessioned.fl_str_mv 2020-01-23T04:05:46Z
dc.type.driver.fl_str_mv Estrangeiro
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dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
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dc.identifier.uri.fl_str_mv http://hdl.handle.net/10183/204874
dc.identifier.issn.pt_BR.fl_str_mv 0734-2101
dc.identifier.nrb.pt_BR.fl_str_mv 000056049
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url http://hdl.handle.net/10183/204874
dc.language.iso.fl_str_mv eng
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dc.relation.ispartof.pt_BR.fl_str_mv Journal of Vacuum Science & Technology a : Vacuum, Surfaces and Films. New York. Vol. 10, no. 5 (Sept./Oct. 1992), p. 3272-3277
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institution UFRGS
reponame_str Repositório Institucional da UFRGS
collection Repositório Institucional da UFRGS
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