Study on radio frequency reactive sputtering deposition of silicon nitride thin films

Detalhes bibliográficos
Autor(a) principal: Stedile, Fernanda Chiarello
Data de Publicação: 1992
Outros Autores: Baumvol, Israel Jacob Rabin, Schreiner, Wido Herwig, Freire Junior, Fernando Leite
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Institucional da UFRGS
Texto Completo: http://hdl.handle.net/10183/204821
Resumo: A rf magnetron sputtering apparatus operating at constant gas pressure was used to deposit silicon nitride thin films in an Ar-N2 plasma. The nitrogen partial pressure, incident rf power, and the deposition time were varied to obtain various sets of films. In analyzing the stoichiometry and thickness of the silicon nitride films by Rutherford backscattering spectroscopy, several correlations among deposition parameters and film characteristics could be found. The results can be discussed by adapting a reactive sputtering theoretical model to the present conditions. An alternative method to grow films with the same stoichiometry but under different deposition rates was tested.
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spelling Stedile, Fernanda ChiarelloBaumvol, Israel Jacob RabinSchreiner, Wido HerwigFreire Junior, Fernando Leite2020-01-23T04:04:44Z19920734-2101http://hdl.handle.net/10183/204821000056048A rf magnetron sputtering apparatus operating at constant gas pressure was used to deposit silicon nitride thin films in an Ar-N2 plasma. The nitrogen partial pressure, incident rf power, and the deposition time were varied to obtain various sets of films. In analyzing the stoichiometry and thickness of the silicon nitride films by Rutherford backscattering spectroscopy, several correlations among deposition parameters and film characteristics could be found. The results can be discussed by adapting a reactive sputtering theoretical model to the present conditions. An alternative method to grow films with the same stoichiometry but under different deposition rates was tested.application/pdfengJournal of Vacuum Science & Technology a : Vacuum, Surfaces and Films. New York. Vol. 10, n. 3 (May/June 1992), p. 462-467Física da matéria condensadaImplantação de íonsFilmes finosStudy on radio frequency reactive sputtering deposition of silicon nitride thin filmsEstrangeiroinfo:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/openAccessreponame:Repositório Institucional da UFRGSinstname:Universidade Federal do Rio Grande do Sul (UFRGS)instacron:UFRGSTEXT000056048.pdf.txt000056048.pdf.txtExtracted Texttext/plain28484http://www.lume.ufrgs.br/bitstream/10183/204821/2/000056048.pdf.txtd90efad77da026ef5d3bfc713c163653MD52ORIGINAL000056048.pdfTexto completo (inglês)application/pdf759978http://www.lume.ufrgs.br/bitstream/10183/204821/1/000056048.pdf73374a1e5d0f3a4bd881e234229739b6MD5110183/2048212022-02-22 04:50:28.91708oai:www.lume.ufrgs.br:10183/204821Repositório de PublicaçõesPUBhttps://lume.ufrgs.br/oai/requestopendoar:2022-02-22T07:50:28Repositório Institucional da UFRGS - Universidade Federal do Rio Grande do Sul (UFRGS)false
dc.title.pt_BR.fl_str_mv Study on radio frequency reactive sputtering deposition of silicon nitride thin films
title Study on radio frequency reactive sputtering deposition of silicon nitride thin films
spellingShingle Study on radio frequency reactive sputtering deposition of silicon nitride thin films
Stedile, Fernanda Chiarello
Física da matéria condensada
Implantação de íons
Filmes finos
title_short Study on radio frequency reactive sputtering deposition of silicon nitride thin films
title_full Study on radio frequency reactive sputtering deposition of silicon nitride thin films
title_fullStr Study on radio frequency reactive sputtering deposition of silicon nitride thin films
title_full_unstemmed Study on radio frequency reactive sputtering deposition of silicon nitride thin films
title_sort Study on radio frequency reactive sputtering deposition of silicon nitride thin films
author Stedile, Fernanda Chiarello
author_facet Stedile, Fernanda Chiarello
Baumvol, Israel Jacob Rabin
Schreiner, Wido Herwig
Freire Junior, Fernando Leite
author_role author
author2 Baumvol, Israel Jacob Rabin
Schreiner, Wido Herwig
Freire Junior, Fernando Leite
author2_role author
author
author
dc.contributor.author.fl_str_mv Stedile, Fernanda Chiarello
Baumvol, Israel Jacob Rabin
Schreiner, Wido Herwig
Freire Junior, Fernando Leite
dc.subject.por.fl_str_mv Física da matéria condensada
Implantação de íons
Filmes finos
topic Física da matéria condensada
Implantação de íons
Filmes finos
description A rf magnetron sputtering apparatus operating at constant gas pressure was used to deposit silicon nitride thin films in an Ar-N2 plasma. The nitrogen partial pressure, incident rf power, and the deposition time were varied to obtain various sets of films. In analyzing the stoichiometry and thickness of the silicon nitride films by Rutherford backscattering spectroscopy, several correlations among deposition parameters and film characteristics could be found. The results can be discussed by adapting a reactive sputtering theoretical model to the present conditions. An alternative method to grow films with the same stoichiometry but under different deposition rates was tested.
publishDate 1992
dc.date.issued.fl_str_mv 1992
dc.date.accessioned.fl_str_mv 2020-01-23T04:04:44Z
dc.type.driver.fl_str_mv Estrangeiro
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dc.identifier.uri.fl_str_mv http://hdl.handle.net/10183/204821
dc.identifier.issn.pt_BR.fl_str_mv 0734-2101
dc.identifier.nrb.pt_BR.fl_str_mv 000056048
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dc.language.iso.fl_str_mv eng
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dc.relation.ispartof.pt_BR.fl_str_mv Journal of Vacuum Science & Technology a : Vacuum, Surfaces and Films. New York. Vol. 10, n. 3 (May/June 1992), p. 462-467
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reponame_str Repositório Institucional da UFRGS
collection Repositório Institucional da UFRGS
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