Enhanced damage accumulation in carbon implanted silicon

Detalhes bibliográficos
Autor(a) principal: Souza, Joel Pereira de
Data de Publicação: 1994
Outros Autores: Boudinov, Henri Ivanov, Fichtner, Paulo Fernando Papaleo
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Institucional da UFRGS
Texto Completo: http://hdl.handle.net/10183/140693
Resumo: The accumulation of damage in Si implanted with 12C+ was investigated experimentally using aligned Rutherford backscattering analysis. The damage protiles in Si implanted with 12C+ or 11B+ at 50 keV to the same doses and dose rate were compared. It was found that the damage accumulates at a noticeably higher rate by 12C+ implantation than by 11B+, especially for doses >2X 1Or5 cmm2. In order to explain our results we suggest that self-interstitial Si atoms are captured by the implanted C atoms, forming complex defects which are stable at room temperature.
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spelling Souza, Joel Pereira deBoudinov, Henri IvanovFichtner, Paulo Fernando Papaleo2016-05-11T02:10:07Z19940003-6951http://hdl.handle.net/10183/140693000220495The accumulation of damage in Si implanted with 12C+ was investigated experimentally using aligned Rutherford backscattering analysis. The damage protiles in Si implanted with 12C+ or 11B+ at 50 keV to the same doses and dose rate were compared. It was found that the damage accumulates at a noticeably higher rate by 12C+ implantation than by 11B+, especially for doses >2X 1Or5 cmm2. In order to explain our results we suggest that self-interstitial Si atoms are captured by the implanted C atoms, forming complex defects which are stable at room temperature.application/pdfengApplied physics letters. New York. Vol. 64, no. 26 (June 1994), p. 3596-3597Física da matéria condensadaImplantação de íonsRetroespalhamento rutherfordEnhanced damage accumulation in carbon implanted siliconEstrangeiroinfo:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/openAccessreponame:Repositório Institucional da UFRGSinstname:Universidade Federal do Rio Grande do Sul (UFRGS)instacron:UFRGSORIGINAL000220495.pdf000220495.pdfTexto completo (inglês)application/pdf603164http://www.lume.ufrgs.br/bitstream/10183/140693/1/000220495.pdfc3c007f6ea9039273fe0da610af91170MD51TEXT000220495.pdf.txt000220495.pdf.txtExtracted Texttext/plain11132http://www.lume.ufrgs.br/bitstream/10183/140693/2/000220495.pdf.txt679560f1b7ad2fc99ff0de20cbde28a1MD52THUMBNAIL000220495.pdf.jpg000220495.pdf.jpgGenerated Thumbnailimage/jpeg2154http://www.lume.ufrgs.br/bitstream/10183/140693/3/000220495.pdf.jpg0f841244c1167d5e7ed74485c0813f92MD5310183/1406932024-09-06 06:38:29.647839oai:www.lume.ufrgs.br:10183/140693Repositório de PublicaçõesPUBhttps://lume.ufrgs.br/oai/requestopendoar:2024-09-06T09:38:29Repositório Institucional da UFRGS - Universidade Federal do Rio Grande do Sul (UFRGS)false
dc.title.pt_BR.fl_str_mv Enhanced damage accumulation in carbon implanted silicon
title Enhanced damage accumulation in carbon implanted silicon
spellingShingle Enhanced damage accumulation in carbon implanted silicon
Souza, Joel Pereira de
Física da matéria condensada
Implantação de íons
Retroespalhamento rutherford
title_short Enhanced damage accumulation in carbon implanted silicon
title_full Enhanced damage accumulation in carbon implanted silicon
title_fullStr Enhanced damage accumulation in carbon implanted silicon
title_full_unstemmed Enhanced damage accumulation in carbon implanted silicon
title_sort Enhanced damage accumulation in carbon implanted silicon
author Souza, Joel Pereira de
author_facet Souza, Joel Pereira de
Boudinov, Henri Ivanov
Fichtner, Paulo Fernando Papaleo
author_role author
author2 Boudinov, Henri Ivanov
Fichtner, Paulo Fernando Papaleo
author2_role author
author
dc.contributor.author.fl_str_mv Souza, Joel Pereira de
Boudinov, Henri Ivanov
Fichtner, Paulo Fernando Papaleo
dc.subject.por.fl_str_mv Física da matéria condensada
Implantação de íons
Retroespalhamento rutherford
topic Física da matéria condensada
Implantação de íons
Retroespalhamento rutherford
description The accumulation of damage in Si implanted with 12C+ was investigated experimentally using aligned Rutherford backscattering analysis. The damage protiles in Si implanted with 12C+ or 11B+ at 50 keV to the same doses and dose rate were compared. It was found that the damage accumulates at a noticeably higher rate by 12C+ implantation than by 11B+, especially for doses >2X 1Or5 cmm2. In order to explain our results we suggest that self-interstitial Si atoms are captured by the implanted C atoms, forming complex defects which are stable at room temperature.
publishDate 1994
dc.date.issued.fl_str_mv 1994
dc.date.accessioned.fl_str_mv 2016-05-11T02:10:07Z
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dc.identifier.issn.pt_BR.fl_str_mv 0003-6951
dc.identifier.nrb.pt_BR.fl_str_mv 000220495
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url http://hdl.handle.net/10183/140693
dc.language.iso.fl_str_mv eng
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dc.relation.ispartof.pt_BR.fl_str_mv Applied physics letters. New York. Vol. 64, no. 26 (June 1994), p. 3596-3597
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