Formation of epitaxial [Beta]-Sn islands at the interface of SiO/sub 2/Si layers implanted with Sn ions
| Autor(a) principal: | |
|---|---|
| Data de Publicação: | 2005 |
| Outros Autores: | , , , , , |
| Tipo de documento: | Artigo |
| Idioma: | eng |
| Título da fonte: | Repositório Institucional da UFRGS |
| Texto Completo: | http://hdl.handle.net/10183/141284 |
Resumo: | 180 nm SiO2 layers on Si s100d were implanted with Sn ions producing a profile with a peak concentration of 3 at. % at the middle of the oxide. After high temperature s900–1100 °Cd annealing, an array of b-Sn islands epitaxially attached to the Si was observed at the SiO2/Sis100d interface due to the migration of the implanted Sn atoms. The breakdown of the planar SiO2 /Si interface and the appearance of the island system is discussed in terms of the Sn–Si equilibrium properties. Our results reveal a new method to create a high density of nanosized islands with good uniformity in size and shape. |
| id |
UFRGS-2_1abc7955470f97f26443965864346cb0 |
|---|---|
| oai_identifier_str |
oai:www.lume.ufrgs.br:10183/141284 |
| network_acronym_str |
UFRGS-2 |
| network_name_str |
Repositório Institucional da UFRGS |
| repository_id_str |
|
| spelling |
Lopes, João Marcelo JordãoZawislak, Fernando ClaudioFichtner, Paulo Fernando PapaleoPapaleo, Ricardo MeurerLovey, Francisco CarlosCondó, Adriana M.Tolley, Alfredo J.2016-05-19T02:09:22Z20050003-6951http://hdl.handle.net/10183/141284000530391180 nm SiO2 layers on Si s100d were implanted with Sn ions producing a profile with a peak concentration of 3 at. % at the middle of the oxide. After high temperature s900–1100 °Cd annealing, an array of b-Sn islands epitaxially attached to the Si was observed at the SiO2/Sis100d interface due to the migration of the implanted Sn atoms. The breakdown of the planar SiO2 /Si interface and the appearance of the island system is discussed in terms of the Sn–Si equilibrium properties. Our results reveal a new method to create a high density of nanosized islands with good uniformity in size and shape.application/pdfengApplied physics letters. New York. Vol. 86, no. 19 (May 2005), 191914, 3 p.Física da matéria condensadaInterdifusao quimicaSemicondutores elementaresImplantacao ionicaSilícioCompostos de silícioEstanhoFormation of epitaxial [Beta]-Sn islands at the interface of SiO/sub 2/Si layers implanted with Sn ionsEstrangeiroinfo:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/openAccessreponame:Repositório Institucional da UFRGSinstname:Universidade Federal do Rio Grande do Sul (UFRGS)instacron:UFRGSORIGINAL000530391.pdf000530391.pdfTexto completo (inglês)application/pdf724259http://www.lume.ufrgs.br/bitstream/10183/141284/1/000530391.pdf2f725f8e91ed498c37d7be7f559a5d90MD51TEXT000530391.pdf.txt000530391.pdf.txtExtracted Texttext/plain16168http://www.lume.ufrgs.br/bitstream/10183/141284/2/000530391.pdf.txt7409fbc7d8dc6737ea50b8c8b4effceaMD52THUMBNAIL000530391.pdf.jpg000530391.pdf.jpgGenerated Thumbnailimage/jpeg2223http://www.lume.ufrgs.br/bitstream/10183/141284/3/000530391.pdf.jpg6c76232a6c9ce06236428605e631867fMD5310183/1412842022-02-22 04:44:32.398447oai:www.lume.ufrgs.br:10183/141284Repositório de PublicaçõesPUBhttps://lume.ufrgs.br/oai/requestopendoar:2022-02-22T07:44:32Repositório Institucional da UFRGS - Universidade Federal do Rio Grande do Sul (UFRGS)false |
| dc.title.pt_BR.fl_str_mv |
Formation of epitaxial [Beta]-Sn islands at the interface of SiO/sub 2/Si layers implanted with Sn ions |
| title |
Formation of epitaxial [Beta]-Sn islands at the interface of SiO/sub 2/Si layers implanted with Sn ions |
| spellingShingle |
Formation of epitaxial [Beta]-Sn islands at the interface of SiO/sub 2/Si layers implanted with Sn ions Lopes, João Marcelo Jordão Física da matéria condensada Interdifusao quimica Semicondutores elementares Implantacao ionica Silício Compostos de silício Estanho |
| title_short |
Formation of epitaxial [Beta]-Sn islands at the interface of SiO/sub 2/Si layers implanted with Sn ions |
| title_full |
Formation of epitaxial [Beta]-Sn islands at the interface of SiO/sub 2/Si layers implanted with Sn ions |
| title_fullStr |
Formation of epitaxial [Beta]-Sn islands at the interface of SiO/sub 2/Si layers implanted with Sn ions |
| title_full_unstemmed |
Formation of epitaxial [Beta]-Sn islands at the interface of SiO/sub 2/Si layers implanted with Sn ions |
| title_sort |
Formation of epitaxial [Beta]-Sn islands at the interface of SiO/sub 2/Si layers implanted with Sn ions |
| author |
Lopes, João Marcelo Jordão |
| author_facet |
Lopes, João Marcelo Jordão Zawislak, Fernando Claudio Fichtner, Paulo Fernando Papaleo Papaleo, Ricardo Meurer Lovey, Francisco Carlos Condó, Adriana M. Tolley, Alfredo J. |
| author_role |
author |
| author2 |
Zawislak, Fernando Claudio Fichtner, Paulo Fernando Papaleo Papaleo, Ricardo Meurer Lovey, Francisco Carlos Condó, Adriana M. Tolley, Alfredo J. |
| author2_role |
author author author author author author |
| dc.contributor.author.fl_str_mv |
Lopes, João Marcelo Jordão Zawislak, Fernando Claudio Fichtner, Paulo Fernando Papaleo Papaleo, Ricardo Meurer Lovey, Francisco Carlos Condó, Adriana M. Tolley, Alfredo J. |
| dc.subject.por.fl_str_mv |
Física da matéria condensada Interdifusao quimica Semicondutores elementares Implantacao ionica Silício Compostos de silício Estanho |
| topic |
Física da matéria condensada Interdifusao quimica Semicondutores elementares Implantacao ionica Silício Compostos de silício Estanho |
| description |
180 nm SiO2 layers on Si s100d were implanted with Sn ions producing a profile with a peak concentration of 3 at. % at the middle of the oxide. After high temperature s900–1100 °Cd annealing, an array of b-Sn islands epitaxially attached to the Si was observed at the SiO2/Sis100d interface due to the migration of the implanted Sn atoms. The breakdown of the planar SiO2 /Si interface and the appearance of the island system is discussed in terms of the Sn–Si equilibrium properties. Our results reveal a new method to create a high density of nanosized islands with good uniformity in size and shape. |
| publishDate |
2005 |
| dc.date.issued.fl_str_mv |
2005 |
| dc.date.accessioned.fl_str_mv |
2016-05-19T02:09:22Z |
| dc.type.driver.fl_str_mv |
Estrangeiro info:eu-repo/semantics/article |
| dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
| format |
article |
| status_str |
publishedVersion |
| dc.identifier.uri.fl_str_mv |
http://hdl.handle.net/10183/141284 |
| dc.identifier.issn.pt_BR.fl_str_mv |
0003-6951 |
| dc.identifier.nrb.pt_BR.fl_str_mv |
000530391 |
| identifier_str_mv |
0003-6951 000530391 |
| url |
http://hdl.handle.net/10183/141284 |
| dc.language.iso.fl_str_mv |
eng |
| language |
eng |
| dc.relation.ispartof.pt_BR.fl_str_mv |
Applied physics letters. New York. Vol. 86, no. 19 (May 2005), 191914, 3 p. |
| dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
| eu_rights_str_mv |
openAccess |
| dc.format.none.fl_str_mv |
application/pdf |
| dc.source.none.fl_str_mv |
reponame:Repositório Institucional da UFRGS instname:Universidade Federal do Rio Grande do Sul (UFRGS) instacron:UFRGS |
| instname_str |
Universidade Federal do Rio Grande do Sul (UFRGS) |
| instacron_str |
UFRGS |
| institution |
UFRGS |
| reponame_str |
Repositório Institucional da UFRGS |
| collection |
Repositório Institucional da UFRGS |
| bitstream.url.fl_str_mv |
http://www.lume.ufrgs.br/bitstream/10183/141284/1/000530391.pdf http://www.lume.ufrgs.br/bitstream/10183/141284/2/000530391.pdf.txt http://www.lume.ufrgs.br/bitstream/10183/141284/3/000530391.pdf.jpg |
| bitstream.checksum.fl_str_mv |
2f725f8e91ed498c37d7be7f559a5d90 7409fbc7d8dc6737ea50b8c8b4effcea 6c76232a6c9ce06236428605e631867f |
| bitstream.checksumAlgorithm.fl_str_mv |
MD5 MD5 MD5 |
| repository.name.fl_str_mv |
Repositório Institucional da UFRGS - Universidade Federal do Rio Grande do Sul (UFRGS) |
| repository.mail.fl_str_mv |
|
| _version_ |
1801224900165238784 |