Aluminum mobility and interfacial segregation in fully silicided gate contacts

Detalhes bibliográficos
Autor(a) principal: Pezzi, Rafael Peretti
Data de Publicação: 2005
Outros Autores: Copel, Matthew, Cabral Junior, C., Baumvol, Israel Jacob Rabin
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Institucional da UFRGS
Texto Completo: http://hdl.handle.net/10183/141297
Resumo: The mobility of aluminum implanted as a dopant of fully silicided nickel for advanced metal gates has been investigated following rapid thermal annealing at temperatures ranging from 160 to 700 °C. Resonant nuclear reaction profiling using the 27Al p, 28Si reaction was used for aluminum quantification and depth profiling. The results indicate that there is no significant aluminum loss in the whole annealing temperature interval. Furthermore, aluminum is seen to segregate near the interface with silicon oxide during metal silicidation, forming a stable layer of aluminum oxide.
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spelling Pezzi, Rafael PerettiCopel, MatthewCabral Junior, C.Baumvol, Israel Jacob Rabin2016-05-19T02:09:30Z20050003-6951http://hdl.handle.net/10183/141297000522913The mobility of aluminum implanted as a dopant of fully silicided nickel for advanced metal gates has been investigated following rapid thermal annealing at temperatures ranging from 160 to 700 °C. Resonant nuclear reaction profiling using the 27Al p, 28Si reaction was used for aluminum quantification and depth profiling. The results indicate that there is no significant aluminum loss in the whole annealing temperature interval. Furthermore, aluminum is seen to segregate near the interface with silicon oxide during metal silicidation, forming a stable layer of aluminum oxide.application/pdfengApplied physics letters. Vol. 87, no. 16 (Oct. 2005), 162902, 3 p.AlumínioInterdifusao quimicaSemicondutores elementaresNíquelRecozimento térmico rápidoSilícioAluminum mobility and interfacial segregation in fully silicided gate contactsEstrangeiroinfo:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/openAccessreponame:Repositório Institucional da UFRGSinstname:Universidade Federal do Rio Grande do Sul (UFRGS)instacron:UFRGSORIGINAL000522913.pdf000522913.pdfTexto completo (inglês)application/pdf421528http://www.lume.ufrgs.br/bitstream/10183/141297/1/000522913.pdfa357062bb348fc44d359cad1af956622MD51TEXT000522913.pdf.txt000522913.pdf.txtExtracted Texttext/plain14192http://www.lume.ufrgs.br/bitstream/10183/141297/2/000522913.pdf.txt2ed0e893c9df7ce6ff3f1226f341e2baMD52THUMBNAIL000522913.pdf.jpg000522913.pdf.jpgGenerated Thumbnailimage/jpeg2092http://www.lume.ufrgs.br/bitstream/10183/141297/3/000522913.pdf.jpg5134c06c94f1108607f4d7f62f4d86d8MD5310183/1412972022-02-22 05:03:01.642763oai:www.lume.ufrgs.br:10183/141297Repositório de PublicaçõesPUBhttps://lume.ufrgs.br/oai/requestopendoar:2022-02-22T08:03:01Repositório Institucional da UFRGS - Universidade Federal do Rio Grande do Sul (UFRGS)false
dc.title.pt_BR.fl_str_mv Aluminum mobility and interfacial segregation in fully silicided gate contacts
title Aluminum mobility and interfacial segregation in fully silicided gate contacts
spellingShingle Aluminum mobility and interfacial segregation in fully silicided gate contacts
Pezzi, Rafael Peretti
Alumínio
Interdifusao quimica
Semicondutores elementares
Níquel
Recozimento térmico rápido
Silício
title_short Aluminum mobility and interfacial segregation in fully silicided gate contacts
title_full Aluminum mobility and interfacial segregation in fully silicided gate contacts
title_fullStr Aluminum mobility and interfacial segregation in fully silicided gate contacts
title_full_unstemmed Aluminum mobility and interfacial segregation in fully silicided gate contacts
title_sort Aluminum mobility and interfacial segregation in fully silicided gate contacts
author Pezzi, Rafael Peretti
author_facet Pezzi, Rafael Peretti
Copel, Matthew
Cabral Junior, C.
Baumvol, Israel Jacob Rabin
author_role author
author2 Copel, Matthew
Cabral Junior, C.
Baumvol, Israel Jacob Rabin
author2_role author
author
author
dc.contributor.author.fl_str_mv Pezzi, Rafael Peretti
Copel, Matthew
Cabral Junior, C.
Baumvol, Israel Jacob Rabin
dc.subject.por.fl_str_mv Alumínio
Interdifusao quimica
Semicondutores elementares
Níquel
Recozimento térmico rápido
Silício
topic Alumínio
Interdifusao quimica
Semicondutores elementares
Níquel
Recozimento térmico rápido
Silício
description The mobility of aluminum implanted as a dopant of fully silicided nickel for advanced metal gates has been investigated following rapid thermal annealing at temperatures ranging from 160 to 700 °C. Resonant nuclear reaction profiling using the 27Al p, 28Si reaction was used for aluminum quantification and depth profiling. The results indicate that there is no significant aluminum loss in the whole annealing temperature interval. Furthermore, aluminum is seen to segregate near the interface with silicon oxide during metal silicidation, forming a stable layer of aluminum oxide.
publishDate 2005
dc.date.issued.fl_str_mv 2005
dc.date.accessioned.fl_str_mv 2016-05-19T02:09:30Z
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dc.identifier.uri.fl_str_mv http://hdl.handle.net/10183/141297
dc.identifier.issn.pt_BR.fl_str_mv 0003-6951
dc.identifier.nrb.pt_BR.fl_str_mv 000522913
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dc.language.iso.fl_str_mv eng
language eng
dc.relation.ispartof.pt_BR.fl_str_mv Applied physics letters. Vol. 87, no. 16 (Oct. 2005), 162902, 3 p.
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