Thermal stability and diffusion in gadolinium silicate gate dielectric films

• Autor(a) principal: Landheer, Dolf
• Data de Publicação: 2001
• Outros Autores: Wu, Xiaohua, Morais, Jonder, Baumvol, Israel Jacob Rabin, Pezzi, Rafael Peretti, Miotti, Leonardo, Lennard, W.N., Kim, Joon-Kon
• Tipo de documento: Artigo
• Idioma: eng
• Título da fonte: Repositório Institucional da UFRGS
• Texto Completo: http://hdl.handle.net/10183/141228
• topic: Recozimento; Interdifusao quimica; Filmes finos dieletricos; Microscopia eletrônica; Compostos de gadolínio; Retroespalhamento rutherford; Auto-difusao; Estabilidade térmica

Gadolinium silicate films on Si(100) annealed in oxygen and vacuum at temperatures up to 800 °C were analyzed by Rutherford backscattering and narrow resonance nuclear profiling. Oxygen diffused into the film eliminating oxygen vacancies, but Si diffusion, previously observed in Al and Y oxides and in La and Zr silicate films, was absent. Higher-temperature annealing in oxygen resulted in the formation of an interfacial layer observable in high-resolution electron micrographs. Gd0.23Si0.14O0.63 films crystallize at temperatures between 1000 and 1050 °C. These observations combined with recent electrical measurements show that gadolinium silicate films may be a good candidate for the replacement of SiO2 in deep submicron metal–oxide–semiconductor gates.