Strain development and damage accumulation during neon ion implantation into silicon at elevated temperatures

• Autor(a) principal: Cima, Carlos Alberto
• Data de Publicação: 2000
• Outros Autores: Boudinov, Henri Ivanov, Souza, Joel Pereira de, Suprun-Belevich, Yu., Fichtner, Paulo Fernando Papaleo
• Tipo de documento: Artigo
• Idioma: eng
• Título da fonte: Repositório Institucional da UFRGS
• Texto Completo: http://hdl.handle.net/10183/95418
• topic: Bolhas; Discordância; Semicondutores elementares; Defeitos estendidos; Tensões internas; Retroespalhamento rutherford; Dopagem de semicondutores; Implantação de íons; Silicones; Microscopia eletrônica de transmissão; Difração de raios X

The development of mechanical strain and accumulation of damage in silicon single crystals implanted with Ne ions to doses in the range of 0.1–1.0 x1017 cm-² at temperatures from 200 to 600 °C were investigated employing Rutherford backscattering spectrometry, high resolution x-ray diffraction ~HRXRD! analysis and cross section transmission electron microscopy (XTEM). Two distinct layers have been found in the implanted material: A near-surface layer (<0.2 μm thick) where no extended defects are observed and a buried layer (≈0.5 μm thick) containing a dense array of dislocation loops and defect clusters. XTEM analysis revealed a distribution of small spherical cavities presumably filled with Ne, with a diameter <4 nm, extending along the entire depth of the implanted layer. HRXRD studies showed the presence of a positive strain (of expansion), irrespective of the implanted dose and temperature. The findings are discussed in terms of the proposed model which assumes that vacancy-type defects are consumed during the formation of Ne bubbles.