Synthesis of GaN by N ion implantation in GaAs (001)

Detalhes bibliográficos
Autor(a) principal: Lin, X.W.
Data de Publicação: 1995
Outros Autores: Behar, Moni, Maltez, Rogério Luis, Swider, W., Liliental-Weber, Zuzanna, Washburn, J.
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Institucional da UFRGS
Texto Completo: http://hdl.handle.net/10183/140579
Resumo: Both the hexagonal and cubic GaN phases were synthesized in GaAs ~001! by 50 keV N ion implantation at 380 °C and subsequent furnace annealing at 850–950 °C for 10 min–2 h. For a fluence of 1.531017 cm22, transmission electron microscopy revealed that cubic GaN epitaxially crystallizes as precipitates in the GaAs matrix. A cubic-to-hexagonal GaN phase transition was observed for extended thermal anneals. By increasing the N fluence to 331017 cm22, a continuous buried layer of randomly oriented hexagonal-GaN nanocrystals was produced.
id UFRGS-2_368b0cf5cc88d097419d3e23e6376d26
oai_identifier_str oai:www.lume.ufrgs.br:10183/140579
network_acronym_str UFRGS-2
network_name_str Repositório Institucional da UFRGS
repository_id_str
spelling Lin, X.W.Behar, MoniMaltez, Rogério LuisSwider, W.Liliental-Weber, ZuzannaWashburn, J.2016-05-10T02:06:57Z19950003-6951http://hdl.handle.net/10183/140579000036969Both the hexagonal and cubic GaN phases were synthesized in GaAs ~001! by 50 keV N ion implantation at 380 °C and subsequent furnace annealing at 850–950 °C for 10 min–2 h. For a fluence of 1.531017 cm22, transmission electron microscopy revealed that cubic GaN epitaxially crystallizes as precipitates in the GaAs matrix. A cubic-to-hexagonal GaN phase transition was observed for extended thermal anneals. By increasing the N fluence to 331017 cm22, a continuous buried layer of randomly oriented hexagonal-GaN nanocrystals was produced.application/pdfengApplied physics letters. New York. Vol. 67, no. 18 (Oct. 1995), p. 2699-2701Física da matéria condensadaImplantação de íonsMicroscopia ionicaCrescimento epitaxialSputteringDeposição de vapor químicoArseneto de galioSynthesis of GaN by N ion implantation in GaAs (001)Estrangeiroinfo:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/openAccessreponame:Repositório Institucional da UFRGSinstname:Universidade Federal do Rio Grande do Sul (UFRGS)instacron:UFRGSORIGINAL000036969.pdf000036969.pdfTexto completo (inglês)application/pdf894429http://www.lume.ufrgs.br/bitstream/10183/140579/1/000036969.pdf134c3f9f31285a5d3265f741684c10ebMD51TEXT000036969.pdf.txt000036969.pdf.txtExtracted Texttext/plain16125http://www.lume.ufrgs.br/bitstream/10183/140579/2/000036969.pdf.txt1d8b7b3577b8ea7cdb1969f3c41c37caMD5210183/1405792022-02-22 05:04:01.127719oai:www.lume.ufrgs.br:10183/140579Repositório de PublicaçõesPUBhttps://lume.ufrgs.br/oai/requestopendoar:2022-02-22T08:04:01Repositório Institucional da UFRGS - Universidade Federal do Rio Grande do Sul (UFRGS)false
dc.title.pt_BR.fl_str_mv Synthesis of GaN by N ion implantation in GaAs (001)
title Synthesis of GaN by N ion implantation in GaAs (001)
spellingShingle Synthesis of GaN by N ion implantation in GaAs (001)
Lin, X.W.
Física da matéria condensada
Implantação de íons
Microscopia ionica
Crescimento epitaxial
Sputtering
Deposição de vapor químico
Arseneto de galio
title_short Synthesis of GaN by N ion implantation in GaAs (001)
title_full Synthesis of GaN by N ion implantation in GaAs (001)
title_fullStr Synthesis of GaN by N ion implantation in GaAs (001)
title_full_unstemmed Synthesis of GaN by N ion implantation in GaAs (001)
title_sort Synthesis of GaN by N ion implantation in GaAs (001)
author Lin, X.W.
author_facet Lin, X.W.
Behar, Moni
Maltez, Rogério Luis
Swider, W.
Liliental-Weber, Zuzanna
Washburn, J.
author_role author
author2 Behar, Moni
Maltez, Rogério Luis
Swider, W.
Liliental-Weber, Zuzanna
Washburn, J.
author2_role author
author
author
author
author
dc.contributor.author.fl_str_mv Lin, X.W.
Behar, Moni
Maltez, Rogério Luis
Swider, W.
Liliental-Weber, Zuzanna
Washburn, J.
dc.subject.por.fl_str_mv Física da matéria condensada
Implantação de íons
Microscopia ionica
Crescimento epitaxial
Sputtering
Deposição de vapor químico
Arseneto de galio
topic Física da matéria condensada
Implantação de íons
Microscopia ionica
Crescimento epitaxial
Sputtering
Deposição de vapor químico
Arseneto de galio
description Both the hexagonal and cubic GaN phases were synthesized in GaAs ~001! by 50 keV N ion implantation at 380 °C and subsequent furnace annealing at 850–950 °C for 10 min–2 h. For a fluence of 1.531017 cm22, transmission electron microscopy revealed that cubic GaN epitaxially crystallizes as precipitates in the GaAs matrix. A cubic-to-hexagonal GaN phase transition was observed for extended thermal anneals. By increasing the N fluence to 331017 cm22, a continuous buried layer of randomly oriented hexagonal-GaN nanocrystals was produced.
publishDate 1995
dc.date.issued.fl_str_mv 1995
dc.date.accessioned.fl_str_mv 2016-05-10T02:06:57Z
dc.type.driver.fl_str_mv Estrangeiro
info:eu-repo/semantics/article
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://hdl.handle.net/10183/140579
dc.identifier.issn.pt_BR.fl_str_mv 0003-6951
dc.identifier.nrb.pt_BR.fl_str_mv 000036969
identifier_str_mv 0003-6951
000036969
url http://hdl.handle.net/10183/140579
dc.language.iso.fl_str_mv eng
language eng
dc.relation.ispartof.pt_BR.fl_str_mv Applied physics letters. New York. Vol. 67, no. 18 (Oct. 1995), p. 2699-2701
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.source.none.fl_str_mv reponame:Repositório Institucional da UFRGS
instname:Universidade Federal do Rio Grande do Sul (UFRGS)
instacron:UFRGS
instname_str Universidade Federal do Rio Grande do Sul (UFRGS)
instacron_str UFRGS
institution UFRGS
reponame_str Repositório Institucional da UFRGS
collection Repositório Institucional da UFRGS
bitstream.url.fl_str_mv http://www.lume.ufrgs.br/bitstream/10183/140579/1/000036969.pdf
http://www.lume.ufrgs.br/bitstream/10183/140579/2/000036969.pdf.txt
bitstream.checksum.fl_str_mv 134c3f9f31285a5d3265f741684c10eb
1d8b7b3577b8ea7cdb1969f3c41c37ca
bitstream.checksumAlgorithm.fl_str_mv MD5
MD5
repository.name.fl_str_mv Repositório Institucional da UFRGS - Universidade Federal do Rio Grande do Sul (UFRGS)
repository.mail.fl_str_mv
_version_ 1801224898372173824

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