Mechanism for enhancement of electrical activation of silicon in GaAs by aluminum co-implantation

Detalhes bibliográficos
Autor(a) principal: Souza, Joel Pereira de
Data de Publicação: 1993
Outros Autores: Sadana, Devendra K.
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Institucional da UFRGS
Texto Completo: http://hdl.handle.net/10183/179258
Resumo: A pronounced enhancement in the electrical activation of implanted Si in GaAs is demonstrated by co-implantation of Al. The maximum enhancement ( x 2) occurs when the Si distribution is shallow, there is a separation between the Si and Al distributions with the Al being deeper, the Si and Al are implanted at doses of 91 X 1013 cme2, and subsequent annealing of the co-implanted GaAs is performed under capless or proximity cap conditions. A model considering gettering of the oxygen present in the bulk Czochralski-grown GaAs to the implanted Al is invoked to explain the observed activation enhancement.
id UFRGS-2_f284bbcaa7c02b0e58e89dab7a08071f
oai_identifier_str oai:www.lume.ufrgs.br:10183/179258
network_acronym_str UFRGS-2
network_name_str Repositório Institucional da UFRGS
repository_id_str
spelling Souza, Joel Pereira deSadana, Devendra K.2018-06-09T03:34:31Z19930003-6951http://hdl.handle.net/10183/179258000056942A pronounced enhancement in the electrical activation of implanted Si in GaAs is demonstrated by co-implantation of Al. The maximum enhancement ( x 2) occurs when the Si distribution is shallow, there is a separation between the Si and Al distributions with the Al being deeper, the Si and Al are implanted at doses of 91 X 1013 cme2, and subsequent annealing of the co-implanted GaAs is performed under capless or proximity cap conditions. A model considering gettering of the oxygen present in the bulk Czochralski-grown GaAs to the implanted Al is invoked to explain the observed activation enhancement.application/pdfengApplied physics letters. New York. Vol. 63, n. 23 (Dec. 1993), p. 3200-3202Física da matéria condensadaArseneto de galioImplantação de íonsSemicondutoresSilícioAlumínioDopagem de semicondutoresMechanism for enhancement of electrical activation of silicon in GaAs by aluminum co-implantationEstrangeiroinfo:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/openAccessreponame:Repositório Institucional da UFRGSinstname:Universidade Federal do Rio Grande do Sul (UFRGS)instacron:UFRGSORIGINAL000056942.pdf000056942.pdfTexto completo (inglês)application/pdf658023http://www.lume.ufrgs.br/bitstream/10183/179258/1/000056942.pdf15bba7a94f6daf8d629c5b3a6400ec79MD51TEXT000056942.pdf.txt000056942.pdf.txtExtracted Texttext/plain13480http://www.lume.ufrgs.br/bitstream/10183/179258/2/000056942.pdf.txtdafb3ae1f9959ed761d51e6cb9808261MD5210183/1792582022-02-22 05:13:19.370989oai:www.lume.ufrgs.br:10183/179258Repositório de PublicaçõesPUBhttps://lume.ufrgs.br/oai/requestopendoar:2022-02-22T08:13:19Repositório Institucional da UFRGS - Universidade Federal do Rio Grande do Sul (UFRGS)false
dc.title.pt_BR.fl_str_mv Mechanism for enhancement of electrical activation of silicon in GaAs by aluminum co-implantation
title Mechanism for enhancement of electrical activation of silicon in GaAs by aluminum co-implantation
spellingShingle Mechanism for enhancement of electrical activation of silicon in GaAs by aluminum co-implantation
Souza, Joel Pereira de
Física da matéria condensada
Arseneto de galio
Implantação de íons
Semicondutores
Silício
Alumínio
Dopagem de semicondutores
title_short Mechanism for enhancement of electrical activation of silicon in GaAs by aluminum co-implantation
title_full Mechanism for enhancement of electrical activation of silicon in GaAs by aluminum co-implantation
title_fullStr Mechanism for enhancement of electrical activation of silicon in GaAs by aluminum co-implantation
title_full_unstemmed Mechanism for enhancement of electrical activation of silicon in GaAs by aluminum co-implantation
title_sort Mechanism for enhancement of electrical activation of silicon in GaAs by aluminum co-implantation
author Souza, Joel Pereira de
author_facet Souza, Joel Pereira de
Sadana, Devendra K.
author_role author
author2 Sadana, Devendra K.
author2_role author
dc.contributor.author.fl_str_mv Souza, Joel Pereira de
Sadana, Devendra K.
dc.subject.por.fl_str_mv Física da matéria condensada
Arseneto de galio
Implantação de íons
Semicondutores
Silício
Alumínio
Dopagem de semicondutores
topic Física da matéria condensada
Arseneto de galio
Implantação de íons
Semicondutores
Silício
Alumínio
Dopagem de semicondutores
description A pronounced enhancement in the electrical activation of implanted Si in GaAs is demonstrated by co-implantation of Al. The maximum enhancement ( x 2) occurs when the Si distribution is shallow, there is a separation between the Si and Al distributions with the Al being deeper, the Si and Al are implanted at doses of 91 X 1013 cme2, and subsequent annealing of the co-implanted GaAs is performed under capless or proximity cap conditions. A model considering gettering of the oxygen present in the bulk Czochralski-grown GaAs to the implanted Al is invoked to explain the observed activation enhancement.
publishDate 1993
dc.date.issued.fl_str_mv 1993
dc.date.accessioned.fl_str_mv 2018-06-09T03:34:31Z
dc.type.driver.fl_str_mv Estrangeiro
info:eu-repo/semantics/article
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://hdl.handle.net/10183/179258
dc.identifier.issn.pt_BR.fl_str_mv 0003-6951
dc.identifier.nrb.pt_BR.fl_str_mv 000056942
identifier_str_mv 0003-6951
000056942
url http://hdl.handle.net/10183/179258
dc.language.iso.fl_str_mv eng
language eng
dc.relation.ispartof.pt_BR.fl_str_mv Applied physics letters. New York. Vol. 63, n. 23 (Dec. 1993), p. 3200-3202
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.source.none.fl_str_mv reponame:Repositório Institucional da UFRGS
instname:Universidade Federal do Rio Grande do Sul (UFRGS)
instacron:UFRGS
instname_str Universidade Federal do Rio Grande do Sul (UFRGS)
instacron_str UFRGS
institution UFRGS
reponame_str Repositório Institucional da UFRGS
collection Repositório Institucional da UFRGS
bitstream.url.fl_str_mv http://www.lume.ufrgs.br/bitstream/10183/179258/1/000056942.pdf
http://www.lume.ufrgs.br/bitstream/10183/179258/2/000056942.pdf.txt
bitstream.checksum.fl_str_mv 15bba7a94f6daf8d629c5b3a6400ec79
dafb3ae1f9959ed761d51e6cb9808261
bitstream.checksumAlgorithm.fl_str_mv MD5
MD5
repository.name.fl_str_mv Repositório Institucional da UFRGS - Universidade Federal do Rio Grande do Sul (UFRGS)
repository.mail.fl_str_mv
_version_ 1801224945118740480

Registros relacionados