Barrier-induced carrier localization effects in ordered/disordered/ordered quaternary quantum wells grown on GaAs substrates
Autor(a) principal: | |
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Data de Publicação: | 2006 |
Outros Autores: | , , , |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Repositório Institucional da UFRGS |
Texto Completo: | http://hdl.handle.net/10183/109093 |
Resumo: | Optical and micro-structural properties of ordered/disordered/ordered InGaAsP quantum wells grown on GaAs substrates were investigated by photoluminescence spectroscopy, high-resolution transmission electron microscopy and selective area diffraction. Strong evidence of carrier localization effects was obtained from low temperature photoluminescence experiments. Photoluminescence spectra of thinner quantum wells were dominated by a broad emission band located at energies below the bandgap of the well material. The energy peak position of this emission varied considerably with the laser excitation power. Carrier localization was attributed to potential fluctuations in the barrier and well layers, as a result of two coexisting effects: Spontaneously atomic ordering and, in a minor degree, alloy inhomogeneities.We show that a reduction of the ordering degree in the bottom barrier layer resulted in a considerable decrease of localization effects in quaternary quantum well heterostructures. |
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Ribeiro, EvaldoBernussi, Ayrton AndreMaltez, Rogério LuisCarvalho Junior, WilsonGobbi, Angelo Luiz2015-01-21T02:17:23Z20061098-0121http://hdl.handle.net/10183/109093000595065Optical and micro-structural properties of ordered/disordered/ordered InGaAsP quantum wells grown on GaAs substrates were investigated by photoluminescence spectroscopy, high-resolution transmission electron microscopy and selective area diffraction. Strong evidence of carrier localization effects was obtained from low temperature photoluminescence experiments. Photoluminescence spectra of thinner quantum wells were dominated by a broad emission band located at energies below the bandgap of the well material. The energy peak position of this emission varied considerably with the laser excitation power. Carrier localization was attributed to potential fluctuations in the barrier and well layers, as a result of two coexisting effects: Spontaneously atomic ordering and, in a minor degree, alloy inhomogeneities.We show that a reduction of the ordering degree in the bottom barrier layer resulted in a considerable decrease of localization effects in quaternary quantum well heterostructures.application/pdfengPhysical review. B, Condensed matter and materials physics. Melville. Vol. 73, no. 7 (Feb. 2006), 075330 7p.Física da matéria condensadaArseneto de galioSemicondutores iii-vCompostos de indioIntervalo proibido de energiaFotoluminescênciaMicroscopia eletrônicaBarrier-induced carrier localization effects in ordered/disordered/ordered quaternary quantum wells grown on GaAs substratesEstrangeiroinfo:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/openAccessreponame:Repositório Institucional da UFRGSinstname:Universidade Federal do Rio Grande do Sul (UFRGS)instacron:UFRGSORIGINAL000595065.pdf000595065.pdfTexto completo (inglês)application/pdf269233http://www.lume.ufrgs.br/bitstream/10183/109093/1/000595065.pdf6dc383529c08994d990248e624a9d55cMD51TEXT000595065.pdf.txt000595065.pdf.txtExtracted Texttext/plain34140http://www.lume.ufrgs.br/bitstream/10183/109093/2/000595065.pdf.txt03e6e441a0bb39c8f733bc772069e785MD52THUMBNAIL000595065.pdf.jpg000595065.pdf.jpgGenerated Thumbnailimage/jpeg2075http://www.lume.ufrgs.br/bitstream/10183/109093/3/000595065.pdf.jpgeecbada83e2dba1561e38add1500adcaMD5310183/1090932018-10-23 08:42:36.916oai:www.lume.ufrgs.br:10183/109093Repositório de PublicaçõesPUBhttps://lume.ufrgs.br/oai/requestopendoar:2018-10-23T11:42:36Repositório Institucional da UFRGS - Universidade Federal do Rio Grande do Sul (UFRGS)false |
dc.title.pt_BR.fl_str_mv |
Barrier-induced carrier localization effects in ordered/disordered/ordered quaternary quantum wells grown on GaAs substrates |
title |
Barrier-induced carrier localization effects in ordered/disordered/ordered quaternary quantum wells grown on GaAs substrates |
spellingShingle |
Barrier-induced carrier localization effects in ordered/disordered/ordered quaternary quantum wells grown on GaAs substrates Ribeiro, Evaldo Física da matéria condensada Arseneto de galio Semicondutores iii-v Compostos de indio Intervalo proibido de energia Fotoluminescência Microscopia eletrônica |
title_short |
Barrier-induced carrier localization effects in ordered/disordered/ordered quaternary quantum wells grown on GaAs substrates |
title_full |
Barrier-induced carrier localization effects in ordered/disordered/ordered quaternary quantum wells grown on GaAs substrates |
title_fullStr |
Barrier-induced carrier localization effects in ordered/disordered/ordered quaternary quantum wells grown on GaAs substrates |
title_full_unstemmed |
Barrier-induced carrier localization effects in ordered/disordered/ordered quaternary quantum wells grown on GaAs substrates |
title_sort |
Barrier-induced carrier localization effects in ordered/disordered/ordered quaternary quantum wells grown on GaAs substrates |
author |
Ribeiro, Evaldo |
author_facet |
Ribeiro, Evaldo Bernussi, Ayrton Andre Maltez, Rogério Luis Carvalho Junior, Wilson Gobbi, Angelo Luiz |
author_role |
author |
author2 |
Bernussi, Ayrton Andre Maltez, Rogério Luis Carvalho Junior, Wilson Gobbi, Angelo Luiz |
author2_role |
author author author author |
dc.contributor.author.fl_str_mv |
Ribeiro, Evaldo Bernussi, Ayrton Andre Maltez, Rogério Luis Carvalho Junior, Wilson Gobbi, Angelo Luiz |
dc.subject.por.fl_str_mv |
Física da matéria condensada Arseneto de galio Semicondutores iii-v Compostos de indio Intervalo proibido de energia Fotoluminescência Microscopia eletrônica |
topic |
Física da matéria condensada Arseneto de galio Semicondutores iii-v Compostos de indio Intervalo proibido de energia Fotoluminescência Microscopia eletrônica |
description |
Optical and micro-structural properties of ordered/disordered/ordered InGaAsP quantum wells grown on GaAs substrates were investigated by photoluminescence spectroscopy, high-resolution transmission electron microscopy and selective area diffraction. Strong evidence of carrier localization effects was obtained from low temperature photoluminescence experiments. Photoluminescence spectra of thinner quantum wells were dominated by a broad emission band located at energies below the bandgap of the well material. The energy peak position of this emission varied considerably with the laser excitation power. Carrier localization was attributed to potential fluctuations in the barrier and well layers, as a result of two coexisting effects: Spontaneously atomic ordering and, in a minor degree, alloy inhomogeneities.We show that a reduction of the ordering degree in the bottom barrier layer resulted in a considerable decrease of localization effects in quaternary quantum well heterostructures. |
publishDate |
2006 |
dc.date.issued.fl_str_mv |
2006 |
dc.date.accessioned.fl_str_mv |
2015-01-21T02:17:23Z |
dc.type.driver.fl_str_mv |
Estrangeiro info:eu-repo/semantics/article |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
format |
article |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://hdl.handle.net/10183/109093 |
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1098-0121 |
dc.identifier.nrb.pt_BR.fl_str_mv |
000595065 |
identifier_str_mv |
1098-0121 000595065 |
url |
http://hdl.handle.net/10183/109093 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.ispartof.pt_BR.fl_str_mv |
Physical review. B, Condensed matter and materials physics. Melville. Vol. 73, no. 7 (Feb. 2006), 075330 7p. |
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info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
application/pdf |
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