Interaction of SiC thermal oxidation by-products with SiO2

Detalhes bibliográficos
Autor(a) principal: Radtke, Claudio
Data de Publicação: 2008
Outros Autores: Stedile, Fernanda Chiarello, Soares, Gabriel Vieira, Krug, Cristiano, Rosa, Elisa Brod Oliveira da, Driemeier, Carlos Eduardo, Baumvol, Israel Jacob Rabin, Pezzi, Rafael Peretti
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Institucional da UFRGS
Texto Completo: http://hdl.handle.net/10183/141771
Resumo: We investigated oxygen incorporation and exchange during thermal growth of silicon oxide films on silicon carbide. This investigation was carried out in parallel with the thermal growth of silicon oxide films on silicon for comparison.We provide experimental evidence that oxidation by-products of silicon carbide out-diffuse and interact with the silicon oxide overlayer, incorporating C and O. This and other results are in sharp contrast to those obtained for silicon samples, constituting a key issue in the stability of any dielectric material used on silicon carbide.
id UFRGS-2_3fe930e27959ceea9a3dcf2dd5f469c7
oai_identifier_str oai:www.lume.ufrgs.br:10183/141771
network_acronym_str UFRGS-2
network_name_str Repositório Institucional da UFRGS
repository_id_str
spelling Radtke, ClaudioStedile, Fernanda ChiarelloSoares, Gabriel VieiraKrug, CristianoRosa, Elisa Brod Oliveira daDriemeier, Carlos EduardoBaumvol, Israel Jacob RabinPezzi, Rafael Peretti2016-05-24T02:11:11Z20080003-6951http://hdl.handle.net/10183/141771000650114We investigated oxygen incorporation and exchange during thermal growth of silicon oxide films on silicon carbide. This investigation was carried out in parallel with the thermal growth of silicon oxide films on silicon for comparison.We provide experimental evidence that oxidation by-products of silicon carbide out-diffuse and interact with the silicon oxide overlayer, incorporating C and O. This and other results are in sharp contrast to those obtained for silicon samples, constituting a key issue in the stability of any dielectric material used on silicon carbide.application/pdfengApplied physics letters. New York. Vol. 92, no. 25 (June 2008), 252909, 3 p.Carbeto de silícioExpansão térmicaFilmes finosFilmes finos dieletricosMateriais dielétricosInteraction of SiC thermal oxidation by-products with SiO2Estrangeiroinfo:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/openAccessreponame:Repositório Institucional da UFRGSinstname:Universidade Federal do Rio Grande do Sul (UFRGS)instacron:UFRGSORIGINAL000650114.pdf000650114.pdfTexto completo (inglês)application/pdf593949http://www.lume.ufrgs.br/bitstream/10183/141771/1/000650114.pdfcb580a7ceb3678906b058b0e6b12a9ffMD51TEXT000650114.pdf.txt000650114.pdf.txtExtracted Texttext/plain17912http://www.lume.ufrgs.br/bitstream/10183/141771/2/000650114.pdf.txt5940e478ef502c01a4d68f40f1eac67dMD52THUMBNAIL000650114.pdf.jpg000650114.pdf.jpgGenerated Thumbnailimage/jpeg2094http://www.lume.ufrgs.br/bitstream/10183/141771/3/000650114.pdf.jpgc61a7fc88e0aa8e3add48f0ae57ea936MD5310183/1417712023-06-15 03:27:56.962064oai:www.lume.ufrgs.br:10183/141771Repositório de PublicaçõesPUBhttps://lume.ufrgs.br/oai/requestopendoar:2023-06-15T06:27:56Repositório Institucional da UFRGS - Universidade Federal do Rio Grande do Sul (UFRGS)false
dc.title.pt_BR.fl_str_mv Interaction of SiC thermal oxidation by-products with SiO2
title Interaction of SiC thermal oxidation by-products with SiO2
spellingShingle Interaction of SiC thermal oxidation by-products with SiO2
Radtke, Claudio
Carbeto de silício
Expansão térmica
Filmes finos
Filmes finos dieletricos
Materiais dielétricos
title_short Interaction of SiC thermal oxidation by-products with SiO2
title_full Interaction of SiC thermal oxidation by-products with SiO2
title_fullStr Interaction of SiC thermal oxidation by-products with SiO2
title_full_unstemmed Interaction of SiC thermal oxidation by-products with SiO2
title_sort Interaction of SiC thermal oxidation by-products with SiO2
author Radtke, Claudio
author_facet Radtke, Claudio
Stedile, Fernanda Chiarello
Soares, Gabriel Vieira
Krug, Cristiano
Rosa, Elisa Brod Oliveira da
Driemeier, Carlos Eduardo
Baumvol, Israel Jacob Rabin
Pezzi, Rafael Peretti
author_role author
author2 Stedile, Fernanda Chiarello
Soares, Gabriel Vieira
Krug, Cristiano
Rosa, Elisa Brod Oliveira da
Driemeier, Carlos Eduardo
Baumvol, Israel Jacob Rabin
Pezzi, Rafael Peretti
author2_role author
author
author
author
author
author
author
dc.contributor.author.fl_str_mv Radtke, Claudio
Stedile, Fernanda Chiarello
Soares, Gabriel Vieira
Krug, Cristiano
Rosa, Elisa Brod Oliveira da
Driemeier, Carlos Eduardo
Baumvol, Israel Jacob Rabin
Pezzi, Rafael Peretti
dc.subject.por.fl_str_mv Carbeto de silício
Expansão térmica
Filmes finos
Filmes finos dieletricos
Materiais dielétricos
topic Carbeto de silício
Expansão térmica
Filmes finos
Filmes finos dieletricos
Materiais dielétricos
description We investigated oxygen incorporation and exchange during thermal growth of silicon oxide films on silicon carbide. This investigation was carried out in parallel with the thermal growth of silicon oxide films on silicon for comparison.We provide experimental evidence that oxidation by-products of silicon carbide out-diffuse and interact with the silicon oxide overlayer, incorporating C and O. This and other results are in sharp contrast to those obtained for silicon samples, constituting a key issue in the stability of any dielectric material used on silicon carbide.
publishDate 2008
dc.date.issued.fl_str_mv 2008
dc.date.accessioned.fl_str_mv 2016-05-24T02:11:11Z
dc.type.driver.fl_str_mv Estrangeiro
info:eu-repo/semantics/article
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://hdl.handle.net/10183/141771
dc.identifier.issn.pt_BR.fl_str_mv 0003-6951
dc.identifier.nrb.pt_BR.fl_str_mv 000650114
identifier_str_mv 0003-6951
000650114
url http://hdl.handle.net/10183/141771
dc.language.iso.fl_str_mv eng
language eng
dc.relation.ispartof.pt_BR.fl_str_mv Applied physics letters. New York. Vol. 92, no. 25 (June 2008), 252909, 3 p.
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.source.none.fl_str_mv reponame:Repositório Institucional da UFRGS
instname:Universidade Federal do Rio Grande do Sul (UFRGS)
instacron:UFRGS
instname_str Universidade Federal do Rio Grande do Sul (UFRGS)
instacron_str UFRGS
institution UFRGS
reponame_str Repositório Institucional da UFRGS
collection Repositório Institucional da UFRGS
bitstream.url.fl_str_mv http://www.lume.ufrgs.br/bitstream/10183/141771/1/000650114.pdf
http://www.lume.ufrgs.br/bitstream/10183/141771/2/000650114.pdf.txt
http://www.lume.ufrgs.br/bitstream/10183/141771/3/000650114.pdf.jpg
bitstream.checksum.fl_str_mv cb580a7ceb3678906b058b0e6b12a9ff
5940e478ef502c01a4d68f40f1eac67d
c61a7fc88e0aa8e3add48f0ae57ea936
bitstream.checksumAlgorithm.fl_str_mv MD5
MD5
MD5
repository.name.fl_str_mv Repositório Institucional da UFRGS - Universidade Federal do Rio Grande do Sul (UFRGS)
repository.mail.fl_str_mv
_version_ 1815447614981668864

Registros relacionados