Effects of ion irradiation in the thermal oxidation of SIC

Detalhes bibliográficos
Autor(a) principal: Radtke, Claudio
Data de Publicação: 2002
Outros Autores: Baumvol, Israel Jacob Rabin, Stedile, Fernanda Chiarello
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Institucional da UFRGS
Texto Completo: http://hdl.handle.net/10183/103934
Resumo: We investigated the thermal growth of SiO₂ films on 6H-SiC (0001) samples irradiated with 170 keV Ar⁺ ions. Electronic, compositional, and structural features arisen from the irradiation process were accessed. All results are compared to those of nonirradiated substrates, revealing major differences due to ion bombardment such as the enhanced rate of oxidation, the variation of roughness of both oxide surface and SiO₂ /SiC interface, and of the stress in the formed oxide layer. Modifications on the electronic structure and crystallographic characteristics of the substrate underneath the oxide were also observed in samples in which the ion irradiation damaged layer was only partially consumed by the oxidation step. The present work evidences that a careful choice of sample preparation conditions is necessary to avoid undesired characteristics in the final SiO₂ /SiC structure and points to a way of preventing irradiation related degradation of electrical characteristics while maintaining the high oxidation rate.
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spelling Radtke, ClaudioBaumvol, Israel Jacob RabinStedile, Fernanda Chiarello2014-09-30T02:12:37Z20021098-0121http://hdl.handle.net/10183/103934000338401We investigated the thermal growth of SiO₂ films on 6H-SiC (0001) samples irradiated with 170 keV Ar⁺ ions. Electronic, compositional, and structural features arisen from the irradiation process were accessed. All results are compared to those of nonirradiated substrates, revealing major differences due to ion bombardment such as the enhanced rate of oxidation, the variation of roughness of both oxide surface and SiO₂ /SiC interface, and of the stress in the formed oxide layer. Modifications on the electronic structure and crystallographic characteristics of the substrate underneath the oxide were also observed in samples in which the ion irradiation damaged layer was only partially consumed by the oxidation step. The present work evidences that a careful choice of sample preparation conditions is necessary to avoid undesired characteristics in the final SiO₂ /SiC structure and points to a way of preventing irradiation related degradation of electrical characteristics while maintaining the high oxidation rate.application/pdfengPhysical review. B, Condensed matter and materials physics. Woodbury. Vol. 66, no. 15 (Oct. 2002), 155437, 7 p.OxidaçãoFilmes finosCarbeto de silícioEffects of ion irradiation in the thermal oxidation of SICEstrangeiroinfo:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/openAccessreponame:Repositório Institucional da UFRGSinstname:Universidade Federal do Rio Grande do Sul (UFRGS)instacron:UFRGSORIGINAL000338401.pdf000338401.pdfTexto completo (inglês)application/pdf207619http://www.lume.ufrgs.br/bitstream/10183/103934/1/000338401.pdf8c9e089e0558fc7e71442895a4a5d6c2MD51TEXT000338401.pdf.txt000338401.pdf.txtExtracted Texttext/plain30295http://www.lume.ufrgs.br/bitstream/10183/103934/2/000338401.pdf.txtee6ff2f18a6e3eede706decb87973595MD52THUMBNAIL000338401.pdf.jpg000338401.pdf.jpgGenerated Thumbnailimage/jpeg1940http://www.lume.ufrgs.br/bitstream/10183/103934/3/000338401.pdf.jpg4d3e361bd5f6ed153465182abbeedbe3MD5310183/1039342018-10-08 08:38:49.151oai:www.lume.ufrgs.br:10183/103934Repositório de PublicaçõesPUBhttps://lume.ufrgs.br/oai/requestopendoar:2018-10-08T11:38:49Repositório Institucional da UFRGS - Universidade Federal do Rio Grande do Sul (UFRGS)false
dc.title.pt_BR.fl_str_mv Effects of ion irradiation in the thermal oxidation of SIC
title Effects of ion irradiation in the thermal oxidation of SIC
spellingShingle Effects of ion irradiation in the thermal oxidation of SIC
Radtke, Claudio
Oxidação
Filmes finos
Carbeto de silício
title_short Effects of ion irradiation in the thermal oxidation of SIC
title_full Effects of ion irradiation in the thermal oxidation of SIC
title_fullStr Effects of ion irradiation in the thermal oxidation of SIC
title_full_unstemmed Effects of ion irradiation in the thermal oxidation of SIC
title_sort Effects of ion irradiation in the thermal oxidation of SIC
author Radtke, Claudio
author_facet Radtke, Claudio
Baumvol, Israel Jacob Rabin
Stedile, Fernanda Chiarello
author_role author
author2 Baumvol, Israel Jacob Rabin
Stedile, Fernanda Chiarello
author2_role author
author
dc.contributor.author.fl_str_mv Radtke, Claudio
Baumvol, Israel Jacob Rabin
Stedile, Fernanda Chiarello
dc.subject.por.fl_str_mv Oxidação
Filmes finos
Carbeto de silício
topic Oxidação
Filmes finos
Carbeto de silício
description We investigated the thermal growth of SiO₂ films on 6H-SiC (0001) samples irradiated with 170 keV Ar⁺ ions. Electronic, compositional, and structural features arisen from the irradiation process were accessed. All results are compared to those of nonirradiated substrates, revealing major differences due to ion bombardment such as the enhanced rate of oxidation, the variation of roughness of both oxide surface and SiO₂ /SiC interface, and of the stress in the formed oxide layer. Modifications on the electronic structure and crystallographic characteristics of the substrate underneath the oxide were also observed in samples in which the ion irradiation damaged layer was only partially consumed by the oxidation step. The present work evidences that a careful choice of sample preparation conditions is necessary to avoid undesired characteristics in the final SiO₂ /SiC structure and points to a way of preventing irradiation related degradation of electrical characteristics while maintaining the high oxidation rate.
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dc.date.issued.fl_str_mv 2002
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dc.identifier.issn.pt_BR.fl_str_mv 1098-0121
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dc.relation.ispartof.pt_BR.fl_str_mv Physical review. B, Condensed matter and materials physics. Woodbury. Vol. 66, no. 15 (Oct. 2002), 155437, 7 p.
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