Enhancement in interface robustness regarding thermal oxidation in nanostructured Al2O3 deposited on 4H-SiC

• Autor(a) principal: Corrêa, Silma Alberton
• Data de Publicação: 2009
• Outros Autores: Marmitt, Gabriel Guterres, Bom, Nicolau Molina, Rosa, Aline Tais da, Stedile, Fernanda Chiarello, Radtke, Claudio, Soares, Gabriel Vieira, Baumvol, Israel Jacob Rabin, Krug, Cristiano, Gobbi, Angelo Luiz
• Tipo de documento: Artigo
• Idioma: eng
• Título da fonte: Repositório Institucional da UFRGS
• Texto Completo: http://hdl.handle.net/10183/141737
• topic: Carbeto de silício; Filmes finos dieletricos; Óxido de alumínio; Materiais nanoestruturados

Experimental evidences of enhanced stability of Al2O3 /SiC structures following thermal annealing are presented. 5- and 40-nm-thick Al2O3 films evaporated on the Si- and C-terminated faces of 4H-SiC were annealed up to 1000 °C in different atmospheres, leading to crystallization and densification of Al2O3, with an increase in the band gap. Exposure to O2 at high temperatures produced SiO2 and AlSixOy at the Al2O3 /SiC interface, with less silicate on the Si-terminated face. Annealing in N2 before exposure to O2 hindered oxygen diffusion and exchange, leading to more stable thin film structures from the point of view of atomic transport.