Ultrathin silicon oxynitride film formation by plasma immersion nitrogen implantation
Autor(a) principal: | |
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Data de Publicação: | 1999 |
Outros Autores: | , , , , , , , , |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Repositório Institucional da UFRGS |
Texto Completo: | http://hdl.handle.net/10183/140716 |
Resumo: | A method is proposed to prepare ultrathin silicon oxynitride films for gate dielectrics used in deep submicron metal–oxide–semiconductor field effect transistor device structures, namely plasma immersion N implantation into SiO2 films. Plasma immersion implantation pulse voltages in the range 200–1000 V, and fluences from 1016 to 1017Ncm22 were implanted into thermally grown SiO2 films, with thicknesses between 3 and 6 nm. The areal densities of N and O in the resulting oxynitride films were determined by nuclear reaction analysis, before and after annealing in high-vacuum. N, O, and Si profiles in the films were determined with subnanometric depth resolution by medium energy ion scattering. The results indicate that plasma immersion ion implantation allows for shallow and controlled deposition of significant amounts of nitrogen ~up to 3.8 nm of equivalent Si3N4 thickness!. Implantation is accompanied by moderate damage at the oxynitride/Si interface which can be recovered by thermal annealing. |
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Baumvol, Israel Jacob RabinKrug, CristianoStedile, Fernanda ChiarelloGreen, Martin L.Jacobson, D.C.Eaglesham, D.Bernstein, J.D.Shao, J.Denholm, A.S.Kellerman, P.L.2016-05-11T02:10:25Z19990003-6951http://hdl.handle.net/10183/140716000239743A method is proposed to prepare ultrathin silicon oxynitride films for gate dielectrics used in deep submicron metal–oxide–semiconductor field effect transistor device structures, namely plasma immersion N implantation into SiO2 films. Plasma immersion implantation pulse voltages in the range 200–1000 V, and fluences from 1016 to 1017Ncm22 were implanted into thermally grown SiO2 films, with thicknesses between 3 and 6 nm. The areal densities of N and O in the resulting oxynitride films were determined by nuclear reaction analysis, before and after annealing in high-vacuum. N, O, and Si profiles in the films were determined with subnanometric depth resolution by medium energy ion scattering. The results indicate that plasma immersion ion implantation allows for shallow and controlled deposition of significant amounts of nitrogen ~up to 3.8 nm of equivalent Si3N4 thickness!. Implantation is accompanied by moderate damage at the oxynitride/Si interface which can be recovered by thermal annealing.application/pdfengApplied Physics Letters. New York. Vol. 74, no. 6 (Feb. 1999), p. 806-808Filmes finos dieletricosSilícioImplantação de íonsNitrogênioPlasmasMétodo de Monte CarloReacoes nuclearesRecozimentoUltrathin silicon oxynitride film formation by plasma immersion nitrogen implantationEstrangeiroinfo:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/openAccessreponame:Repositório Institucional da UFRGSinstname:Universidade Federal do Rio Grande do Sul (UFRGS)instacron:UFRGSORIGINAL000239743.pdf000239743.pdfTexto completo (inglês)application/pdf429407http://www.lume.ufrgs.br/bitstream/10183/140716/1/000239743.pdfb5dea27ad1051e2bd6b24fab327b8439MD51TEXT000239743.pdf.txt000239743.pdf.txtExtracted Texttext/plain16126http://www.lume.ufrgs.br/bitstream/10183/140716/2/000239743.pdf.txtfabf632c8cc757366d3f470fb7d99b58MD52THUMBNAIL000239743.pdf.jpg000239743.pdf.jpgGenerated Thumbnailimage/jpeg2238http://www.lume.ufrgs.br/bitstream/10183/140716/3/000239743.pdf.jpg79c251151dce57e8bc06d7b6018a282dMD5310183/1407162023-06-16 03:34:42.508278oai:www.lume.ufrgs.br:10183/140716Repositório de PublicaçõesPUBhttps://lume.ufrgs.br/oai/requestopendoar:2023-06-16T06:34:42Repositório Institucional da UFRGS - Universidade Federal do Rio Grande do Sul (UFRGS)false |
dc.title.pt_BR.fl_str_mv |
Ultrathin silicon oxynitride film formation by plasma immersion nitrogen implantation |
title |
Ultrathin silicon oxynitride film formation by plasma immersion nitrogen implantation |
spellingShingle |
Ultrathin silicon oxynitride film formation by plasma immersion nitrogen implantation Baumvol, Israel Jacob Rabin Filmes finos dieletricos Silício Implantação de íons Nitrogênio Plasmas Método de Monte Carlo Reacoes nucleares Recozimento |
title_short |
Ultrathin silicon oxynitride film formation by plasma immersion nitrogen implantation |
title_full |
Ultrathin silicon oxynitride film formation by plasma immersion nitrogen implantation |
title_fullStr |
Ultrathin silicon oxynitride film formation by plasma immersion nitrogen implantation |
title_full_unstemmed |
Ultrathin silicon oxynitride film formation by plasma immersion nitrogen implantation |
title_sort |
Ultrathin silicon oxynitride film formation by plasma immersion nitrogen implantation |
author |
Baumvol, Israel Jacob Rabin |
author_facet |
Baumvol, Israel Jacob Rabin Krug, Cristiano Stedile, Fernanda Chiarello Green, Martin L. Jacobson, D.C. Eaglesham, D. Bernstein, J.D. Shao, J. Denholm, A.S. Kellerman, P.L. |
author_role |
author |
author2 |
Krug, Cristiano Stedile, Fernanda Chiarello Green, Martin L. Jacobson, D.C. Eaglesham, D. Bernstein, J.D. Shao, J. Denholm, A.S. Kellerman, P.L. |
author2_role |
author author author author author author author author author |
dc.contributor.author.fl_str_mv |
Baumvol, Israel Jacob Rabin Krug, Cristiano Stedile, Fernanda Chiarello Green, Martin L. Jacobson, D.C. Eaglesham, D. Bernstein, J.D. Shao, J. Denholm, A.S. Kellerman, P.L. |
dc.subject.por.fl_str_mv |
Filmes finos dieletricos Silício Implantação de íons Nitrogênio Plasmas Método de Monte Carlo Reacoes nucleares Recozimento |
topic |
Filmes finos dieletricos Silício Implantação de íons Nitrogênio Plasmas Método de Monte Carlo Reacoes nucleares Recozimento |
description |
A method is proposed to prepare ultrathin silicon oxynitride films for gate dielectrics used in deep submicron metal–oxide–semiconductor field effect transistor device structures, namely plasma immersion N implantation into SiO2 films. Plasma immersion implantation pulse voltages in the range 200–1000 V, and fluences from 1016 to 1017Ncm22 were implanted into thermally grown SiO2 films, with thicknesses between 3 and 6 nm. The areal densities of N and O in the resulting oxynitride films were determined by nuclear reaction analysis, before and after annealing in high-vacuum. N, O, and Si profiles in the films were determined with subnanometric depth resolution by medium energy ion scattering. The results indicate that plasma immersion ion implantation allows for shallow and controlled deposition of significant amounts of nitrogen ~up to 3.8 nm of equivalent Si3N4 thickness!. Implantation is accompanied by moderate damage at the oxynitride/Si interface which can be recovered by thermal annealing. |
publishDate |
1999 |
dc.date.issued.fl_str_mv |
1999 |
dc.date.accessioned.fl_str_mv |
2016-05-11T02:10:25Z |
dc.type.driver.fl_str_mv |
Estrangeiro info:eu-repo/semantics/article |
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info:eu-repo/semantics/publishedVersion |
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article |
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publishedVersion |
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http://hdl.handle.net/10183/140716 |
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0003-6951 |
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000239743 |
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http://hdl.handle.net/10183/140716 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.ispartof.pt_BR.fl_str_mv |
Applied Physics Letters. New York. Vol. 74, no. 6 (Feb. 1999), p. 806-808 |
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openAccess |
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