Isotopic tracing during rapid thermal growth of silicon oxynitride films on Si in O2, NH3, and N2O

Detalhes bibliográficos
Autor(a) principal: Baumvol, Israel Jacob Rabin
Data de Publicação: 1997
Outros Autores: Stedile, Fernanda Chiarello, Ganem, Jean-Jacques, Trimaille, Isabelle, Rigo, Serge
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Institucional da UFRGS
Texto Completo: http://hdl.handle.net/10183/140663
Resumo: We performed isotopic tracing of O, N, and H during rapid thermal growth of silicon oxynitride films on silicon in two different sequential, synergistic gas environments: O2, followed by NH3, then followed by N2O; and N2O, followed by NH3. Using nuclear reaction analysis and high resolution depth profiling, we demonstrate that the oxynitride films grow by means of thermally activated atomic transport involving the three traced species. Concomitantly, isotopic exchange processes take place. Growth in these sequential gas environments leads to oxynitride films with N concentration profiles and H concentrations different from those obtained by commonly used processes like thermal growth in N2O only or thermal nitridation of SiO2 films in NH3.
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spelling Baumvol, Israel Jacob RabinStedile, Fernanda ChiarelloGanem, Jean-JacquesTrimaille, IsabelleRigo, Serge2016-05-11T02:09:46Z19970003-6951http://hdl.handle.net/10183/140663000155049We performed isotopic tracing of O, N, and H during rapid thermal growth of silicon oxynitride films on silicon in two different sequential, synergistic gas environments: O2, followed by NH3, then followed by N2O; and N2O, followed by NH3. Using nuclear reaction analysis and high resolution depth profiling, we demonstrate that the oxynitride films grow by means of thermally activated atomic transport involving the three traced species. Concomitantly, isotopic exchange processes take place. Growth in these sequential gas environments leads to oxynitride films with N concentration profiles and H concentrations different from those obtained by commonly used processes like thermal growth in N2O only or thermal nitridation of SiO2 films in NH3.application/pdfengApplied physics letters. New York. Vol. 70, no. 15 (Apr. 1997), p. 2007-2009Tracagem isotopicaOxinitreto de silicioOxido nitrosoFilmes finos dieletricosOxigênioNitrogênioTracadoresProcessos de transporteTransporte atomicoReacoes nuclearesIsotopic tracing during rapid thermal growth of silicon oxynitride films on Si in O2, NH3, and N2OEstrangeiroinfo:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/openAccessreponame:Repositório Institucional da UFRGSinstname:Universidade Federal do Rio Grande do Sul (UFRGS)instacron:UFRGSORIGINAL000155049.pdf000155049.pdfTexto completo (inglês)application/pdf430090http://www.lume.ufrgs.br/bitstream/10183/140663/1/000155049.pdfac062ab190e6bd50b0efc27b18cae54eMD51TEXT000155049.pdf.txt000155049.pdf.txtExtracted Texttext/plain18091http://www.lume.ufrgs.br/bitstream/10183/140663/2/000155049.pdf.txt3227cc9e9f2f4958154130e6e02be857MD52THUMBNAIL000155049.pdf.jpg000155049.pdf.jpgGenerated Thumbnailimage/jpeg2222http://www.lume.ufrgs.br/bitstream/10183/140663/3/000155049.pdf.jpg03edcaca1bcc08d3ed54c3d58019d10aMD5310183/1406632020-01-16 05:10:20.532367oai:www.lume.ufrgs.br:10183/140663Repositório de PublicaçõesPUBhttps://lume.ufrgs.br/oai/requestopendoar:2020-01-16T07:10:20Repositório Institucional da UFRGS - Universidade Federal do Rio Grande do Sul (UFRGS)false
dc.title.pt_BR.fl_str_mv Isotopic tracing during rapid thermal growth of silicon oxynitride films on Si in O2, NH3, and N2O
title Isotopic tracing during rapid thermal growth of silicon oxynitride films on Si in O2, NH3, and N2O
spellingShingle Isotopic tracing during rapid thermal growth of silicon oxynitride films on Si in O2, NH3, and N2O
Baumvol, Israel Jacob Rabin
Tracagem isotopica
Oxinitreto de silicio
Oxido nitroso
Filmes finos dieletricos
Oxigênio
Nitrogênio
Tracadores
Processos de transporte
Transporte atomico
Reacoes nucleares
title_short Isotopic tracing during rapid thermal growth of silicon oxynitride films on Si in O2, NH3, and N2O
title_full Isotopic tracing during rapid thermal growth of silicon oxynitride films on Si in O2, NH3, and N2O
title_fullStr Isotopic tracing during rapid thermal growth of silicon oxynitride films on Si in O2, NH3, and N2O
title_full_unstemmed Isotopic tracing during rapid thermal growth of silicon oxynitride films on Si in O2, NH3, and N2O
title_sort Isotopic tracing during rapid thermal growth of silicon oxynitride films on Si in O2, NH3, and N2O
author Baumvol, Israel Jacob Rabin
author_facet Baumvol, Israel Jacob Rabin
Stedile, Fernanda Chiarello
Ganem, Jean-Jacques
Trimaille, Isabelle
Rigo, Serge
author_role author
author2 Stedile, Fernanda Chiarello
Ganem, Jean-Jacques
Trimaille, Isabelle
Rigo, Serge
author2_role author
author
author
author
dc.contributor.author.fl_str_mv Baumvol, Israel Jacob Rabin
Stedile, Fernanda Chiarello
Ganem, Jean-Jacques
Trimaille, Isabelle
Rigo, Serge
dc.subject.por.fl_str_mv Tracagem isotopica
Oxinitreto de silicio
Oxido nitroso
Filmes finos dieletricos
Oxigênio
Nitrogênio
Tracadores
Processos de transporte
Transporte atomico
Reacoes nucleares
topic Tracagem isotopica
Oxinitreto de silicio
Oxido nitroso
Filmes finos dieletricos
Oxigênio
Nitrogênio
Tracadores
Processos de transporte
Transporte atomico
Reacoes nucleares
description We performed isotopic tracing of O, N, and H during rapid thermal growth of silicon oxynitride films on silicon in two different sequential, synergistic gas environments: O2, followed by NH3, then followed by N2O; and N2O, followed by NH3. Using nuclear reaction analysis and high resolution depth profiling, we demonstrate that the oxynitride films grow by means of thermally activated atomic transport involving the three traced species. Concomitantly, isotopic exchange processes take place. Growth in these sequential gas environments leads to oxynitride films with N concentration profiles and H concentrations different from those obtained by commonly used processes like thermal growth in N2O only or thermal nitridation of SiO2 films in NH3.
publishDate 1997
dc.date.issued.fl_str_mv 1997
dc.date.accessioned.fl_str_mv 2016-05-11T02:09:46Z
dc.type.driver.fl_str_mv Estrangeiro
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dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
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status_str publishedVersion
dc.identifier.uri.fl_str_mv http://hdl.handle.net/10183/140663
dc.identifier.issn.pt_BR.fl_str_mv 0003-6951
dc.identifier.nrb.pt_BR.fl_str_mv 000155049
identifier_str_mv 0003-6951
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url http://hdl.handle.net/10183/140663
dc.language.iso.fl_str_mv eng
language eng
dc.relation.ispartof.pt_BR.fl_str_mv Applied physics letters. New York. Vol. 70, no. 15 (Apr. 1997), p. 2007-2009
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
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instname:Universidade Federal do Rio Grande do Sul (UFRGS)
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instname_str Universidade Federal do Rio Grande do Sul (UFRGS)
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institution UFRGS
reponame_str Repositório Institucional da UFRGS
collection Repositório Institucional da UFRGS
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