Lattice strain distribution resolved by X-ray Braggsurface diffraction in an Si matrix distorted by embedded FeSi2 nanoparticles

• Autor(a) principal: Lang, Rossano
• Data de Publicação: 2013
• Outros Autores: Menezes, Alan Silva de, Santos, Adenilson Oliveira dos, Reboh, Shay, Meneses, Eliermes Arraes, Amaral, Livio, Cardoso, Lisandro Pavie
• Tipo de documento: Artigo
• Idioma: eng
• Título da fonte: Repositório Institucional da UFRGS
• Texto Completo: http://hdl.handle.net/10183/89722
• topic: Nanopartículas; Difração de raios X; Cristalização; Deformação; Silício

Out-of-plane and primarily in-plane lattice strain distributions, along the two perpendicular crystallographic directions on the subsurface of a silicon layer with embedded FeSi2 nanoparticles, were analyzed and resolved as a function of the synchrotron X-ray beam energy by using ω: mappings of the (111) and (111) Bragg-surface diffraction peaks. The nanoparticles, synthesized by ionbeam- induced epitaxial crystallization of Fe+-implanted Si(001), were observed to have different orientations and morphologies (sphere- and plate-like nanoparticles) within the implanted/recrystallized region. The results show that the shape of the synthesized material singularly affects the surrounding Si lattice. The lattice strain distribution elucidated by the nonconventional X-ray Bragg-surface diffraction technique clearly exhibits an anisotropic effect, predominantly caused by plate-shaped nanoparticles. This type of refined detection reflects a key application of the method, which could be used to allow discrimination of strains in distorted semiconductor substrate layers.