Initial stages of SiC oxidation investigated by ion scattering and angle-resolved x-ray photoelectron spectroscopies

Detalhes bibliográficos
Autor(a) principal: Radtke, Claudio
Data de Publicação: 2001
Outros Autores: Baumvol, Israel Jacob Rabin, Morais, Jonder, Stedile, Fernanda Chiarello
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Institucional da UFRGS
Texto Completo: http://hdl.handle.net/10183/141146
Resumo: Initial stages of oxidation of single-crystal, Si-faced silicon carbide were investigated using ion scattering and angle-resolved x-ray photoelectron spectroscopies. The very first oxidation products are shown to be silicon oxycarbides (SiCxOy), while, for longer oxidation times, a mixture of SiCxOy and SiO2 is formed in the near-surface region of the growing oxide film. The composition of the near-surface region of such thin films is very similar to that reported in previous investigations for the near-interface region when thicker oxides films are grown on SiC.
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spelling Radtke, ClaudioBaumvol, Israel Jacob RabinMorais, JonderStedile, Fernanda Chiarello2016-05-14T02:08:34Z20010003-6951http://hdl.handle.net/10183/141146000292331Initial stages of oxidation of single-crystal, Si-faced silicon carbide were investigated using ion scattering and angle-resolved x-ray photoelectron spectroscopies. The very first oxidation products are shown to be silicon oxycarbides (SiCxOy), while, for longer oxidation times, a mixture of SiCxOy and SiO2 is formed in the near-surface region of the growing oxide film. The composition of the near-surface region of such thin films is very similar to that reported in previous investigations for the near-interface region when thicker oxides films are grown on SiC.application/pdfengApplied physics letters. Melville. Vol. 78, no. 23 (June 2001), p. 3601-3603Compostos de silícioEspectro de fotoeletrons produzidos por raios-xFilmes finosSilícioOxidaçãoInitial stages of SiC oxidation investigated by ion scattering and angle-resolved x-ray photoelectron spectroscopiesEstrangeiroinfo:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/openAccessreponame:Repositório Institucional da UFRGSinstname:Universidade Federal do Rio Grande do Sul (UFRGS)instacron:UFRGSORIGINAL000292331.pdf000292331.pdfTexto completo (inglês)application/pdf412058http://www.lume.ufrgs.br/bitstream/10183/141146/1/000292331.pdfe540141c05cab1baaae0f15e4b6c21e4MD51TEXT000292331.pdf.txt000292331.pdf.txtExtracted Texttext/plain17421http://www.lume.ufrgs.br/bitstream/10183/141146/2/000292331.pdf.txtab65557b74eb501de9bb36e907785d95MD52THUMBNAIL000292331.pdf.jpg000292331.pdf.jpgGenerated Thumbnailimage/jpeg2289http://www.lume.ufrgs.br/bitstream/10183/141146/3/000292331.pdf.jpge63b935798f9b2e0d94c65b3b05b0d29MD5310183/1411462024-07-20 06:21:51.030963oai:www.lume.ufrgs.br:10183/141146Repositório de PublicaçõesPUBhttps://lume.ufrgs.br/oai/requestopendoar:2024-07-20T09:21:51Repositório Institucional da UFRGS - Universidade Federal do Rio Grande do Sul (UFRGS)false
dc.title.pt_BR.fl_str_mv Initial stages of SiC oxidation investigated by ion scattering and angle-resolved x-ray photoelectron spectroscopies
title Initial stages of SiC oxidation investigated by ion scattering and angle-resolved x-ray photoelectron spectroscopies
spellingShingle Initial stages of SiC oxidation investigated by ion scattering and angle-resolved x-ray photoelectron spectroscopies
Radtke, Claudio
Compostos de silício
Espectro de fotoeletrons produzidos por raios-x
Filmes finos
Silício
Oxidação
title_short Initial stages of SiC oxidation investigated by ion scattering and angle-resolved x-ray photoelectron spectroscopies
title_full Initial stages of SiC oxidation investigated by ion scattering and angle-resolved x-ray photoelectron spectroscopies
title_fullStr Initial stages of SiC oxidation investigated by ion scattering and angle-resolved x-ray photoelectron spectroscopies
title_full_unstemmed Initial stages of SiC oxidation investigated by ion scattering and angle-resolved x-ray photoelectron spectroscopies
title_sort Initial stages of SiC oxidation investigated by ion scattering and angle-resolved x-ray photoelectron spectroscopies
author Radtke, Claudio
author_facet Radtke, Claudio
Baumvol, Israel Jacob Rabin
Morais, Jonder
Stedile, Fernanda Chiarello
author_role author
author2 Baumvol, Israel Jacob Rabin
Morais, Jonder
Stedile, Fernanda Chiarello
author2_role author
author
author
dc.contributor.author.fl_str_mv Radtke, Claudio
Baumvol, Israel Jacob Rabin
Morais, Jonder
Stedile, Fernanda Chiarello
dc.subject.por.fl_str_mv Compostos de silício
Espectro de fotoeletrons produzidos por raios-x
Filmes finos
Silício
Oxidação
topic Compostos de silício
Espectro de fotoeletrons produzidos por raios-x
Filmes finos
Silício
Oxidação
description Initial stages of oxidation of single-crystal, Si-faced silicon carbide were investigated using ion scattering and angle-resolved x-ray photoelectron spectroscopies. The very first oxidation products are shown to be silicon oxycarbides (SiCxOy), while, for longer oxidation times, a mixture of SiCxOy and SiO2 is formed in the near-surface region of the growing oxide film. The composition of the near-surface region of such thin films is very similar to that reported in previous investigations for the near-interface region when thicker oxides films are grown on SiC.
publishDate 2001
dc.date.issued.fl_str_mv 2001
dc.date.accessioned.fl_str_mv 2016-05-14T02:08:34Z
dc.type.driver.fl_str_mv Estrangeiro
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dc.identifier.uri.fl_str_mv http://hdl.handle.net/10183/141146
dc.identifier.issn.pt_BR.fl_str_mv 0003-6951
dc.identifier.nrb.pt_BR.fl_str_mv 000292331
identifier_str_mv 0003-6951
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url http://hdl.handle.net/10183/141146
dc.language.iso.fl_str_mv eng
language eng
dc.relation.ispartof.pt_BR.fl_str_mv Applied physics letters. Melville. Vol. 78, no. 23 (June 2001), p. 3601-3603
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