Initial stages of SiC oxidation investigated by ion scattering and angle-resolved x-ray photoelectron spectroscopies

Detalhes bibliográficos
Autor(a) principal: Radtke, Claudio
Data de Publicação: 2001
Outros Autores: Baumvol, Israel Jacob Rabin, Morais, Jonder, Stedile, Fernanda Chiarello
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Institucional da UFRGS
Texto Completo: http://hdl.handle.net/10183/141146
Resumo: Initial stages of oxidation of single-crystal, Si-faced silicon carbide were investigated using ion scattering and angle-resolved x-ray photoelectron spectroscopies. The very first oxidation products are shown to be silicon oxycarbides (SiCxOy), while, for longer oxidation times, a mixture of SiCxOy and SiO2 is formed in the near-surface region of the growing oxide film. The composition of the near-surface region of such thin films is very similar to that reported in previous investigations for the near-interface region when thicker oxides films are grown on SiC.
id UFRGS-2_02644d390d52bc8c85cc7588da1f1178
oai_identifier_str oai:www.lume.ufrgs.br:10183/141146
network_acronym_str UFRGS-2
network_name_str Repositório Institucional da UFRGS
repository_id_str
spelling Radtke, ClaudioBaumvol, Israel Jacob RabinMorais, JonderStedile, Fernanda Chiarello2016-05-14T02:08:34Z20010003-6951http://hdl.handle.net/10183/141146000292331Initial stages of oxidation of single-crystal, Si-faced silicon carbide were investigated using ion scattering and angle-resolved x-ray photoelectron spectroscopies. The very first oxidation products are shown to be silicon oxycarbides (SiCxOy), while, for longer oxidation times, a mixture of SiCxOy and SiO2 is formed in the near-surface region of the growing oxide film. The composition of the near-surface region of such thin films is very similar to that reported in previous investigations for the near-interface region when thicker oxides films are grown on SiC.application/pdfengApplied physics letters. Melville. Vol. 78, no. 23 (June 2001), p. 3601-3603Compostos de silícioEspectro de fotoeletrons produzidos por raios-xFilmes finosSilícioOxidaçãoInitial stages of SiC oxidation investigated by ion scattering and angle-resolved x-ray photoelectron spectroscopiesEstrangeiroinfo:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/openAccessreponame:Repositório Institucional da UFRGSinstname:Universidade Federal do Rio Grande do Sul (UFRGS)instacron:UFRGSORIGINAL000292331.pdf000292331.pdfTexto completo (inglês)application/pdf412058http://www.lume.ufrgs.br/bitstream/10183/141146/1/000292331.pdfe540141c05cab1baaae0f15e4b6c21e4MD51TEXT000292331.pdf.txt000292331.pdf.txtExtracted Texttext/plain17421http://www.lume.ufrgs.br/bitstream/10183/141146/2/000292331.pdf.txtab65557b74eb501de9bb36e907785d95MD52THUMBNAIL000292331.pdf.jpg000292331.pdf.jpgGenerated Thumbnailimage/jpeg2289http://www.lume.ufrgs.br/bitstream/10183/141146/3/000292331.pdf.jpge63b935798f9b2e0d94c65b3b05b0d29MD5310183/1411462023-07-20 03:35:00.794401oai:www.lume.ufrgs.br:10183/141146Repositório de PublicaçõesPUBhttps://lume.ufrgs.br/oai/requestopendoar:2023-07-20T06:35Repositório Institucional da UFRGS - Universidade Federal do Rio Grande do Sul (UFRGS)false
dc.title.pt_BR.fl_str_mv Initial stages of SiC oxidation investigated by ion scattering and angle-resolved x-ray photoelectron spectroscopies
title Initial stages of SiC oxidation investigated by ion scattering and angle-resolved x-ray photoelectron spectroscopies
spellingShingle Initial stages of SiC oxidation investigated by ion scattering and angle-resolved x-ray photoelectron spectroscopies
Radtke, Claudio
Compostos de silício
Espectro de fotoeletrons produzidos por raios-x
Filmes finos
Silício
Oxidação
title_short Initial stages of SiC oxidation investigated by ion scattering and angle-resolved x-ray photoelectron spectroscopies
title_full Initial stages of SiC oxidation investigated by ion scattering and angle-resolved x-ray photoelectron spectroscopies
title_fullStr Initial stages of SiC oxidation investigated by ion scattering and angle-resolved x-ray photoelectron spectroscopies
title_full_unstemmed Initial stages of SiC oxidation investigated by ion scattering and angle-resolved x-ray photoelectron spectroscopies
title_sort Initial stages of SiC oxidation investigated by ion scattering and angle-resolved x-ray photoelectron spectroscopies
author Radtke, Claudio
author_facet Radtke, Claudio
Baumvol, Israel Jacob Rabin
Morais, Jonder
Stedile, Fernanda Chiarello
author_role author
author2 Baumvol, Israel Jacob Rabin
Morais, Jonder
Stedile, Fernanda Chiarello
author2_role author
author
author
dc.contributor.author.fl_str_mv Radtke, Claudio
Baumvol, Israel Jacob Rabin
Morais, Jonder
Stedile, Fernanda Chiarello
dc.subject.por.fl_str_mv Compostos de silício
Espectro de fotoeletrons produzidos por raios-x
Filmes finos
Silício
Oxidação
topic Compostos de silício
Espectro de fotoeletrons produzidos por raios-x
Filmes finos
Silício
Oxidação
description Initial stages of oxidation of single-crystal, Si-faced silicon carbide were investigated using ion scattering and angle-resolved x-ray photoelectron spectroscopies. The very first oxidation products are shown to be silicon oxycarbides (SiCxOy), while, for longer oxidation times, a mixture of SiCxOy and SiO2 is formed in the near-surface region of the growing oxide film. The composition of the near-surface region of such thin films is very similar to that reported in previous investigations for the near-interface region when thicker oxides films are grown on SiC.
publishDate 2001
dc.date.issued.fl_str_mv 2001
dc.date.accessioned.fl_str_mv 2016-05-14T02:08:34Z
dc.type.driver.fl_str_mv Estrangeiro
info:eu-repo/semantics/article
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://hdl.handle.net/10183/141146
dc.identifier.issn.pt_BR.fl_str_mv 0003-6951
dc.identifier.nrb.pt_BR.fl_str_mv 000292331
identifier_str_mv 0003-6951
000292331
url http://hdl.handle.net/10183/141146
dc.language.iso.fl_str_mv eng
language eng
dc.relation.ispartof.pt_BR.fl_str_mv Applied physics letters. Melville. Vol. 78, no. 23 (June 2001), p. 3601-3603
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.source.none.fl_str_mv reponame:Repositório Institucional da UFRGS
instname:Universidade Federal do Rio Grande do Sul (UFRGS)
instacron:UFRGS
instname_str Universidade Federal do Rio Grande do Sul (UFRGS)
instacron_str UFRGS
institution UFRGS
reponame_str Repositório Institucional da UFRGS
collection Repositório Institucional da UFRGS
bitstream.url.fl_str_mv http://www.lume.ufrgs.br/bitstream/10183/141146/1/000292331.pdf
http://www.lume.ufrgs.br/bitstream/10183/141146/2/000292331.pdf.txt
http://www.lume.ufrgs.br/bitstream/10183/141146/3/000292331.pdf.jpg
bitstream.checksum.fl_str_mv e540141c05cab1baaae0f15e4b6c21e4
ab65557b74eb501de9bb36e907785d95
e63b935798f9b2e0d94c65b3b05b0d29
bitstream.checksumAlgorithm.fl_str_mv MD5
MD5
MD5
repository.name.fl_str_mv Repositório Institucional da UFRGS - Universidade Federal do Rio Grande do Sul (UFRGS)
repository.mail.fl_str_mv
_version_ 1798487321557860352

Registros relacionados