Comparison of nitrogen incorporation in SiO/sub 2//SiC and SiO/sub 2/Si structures
Autor(a) principal: | |
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Data de Publicação: | 2000 |
Outros Autores: | , , , , , , |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Repositório Institucional da UFRGS |
Texto Completo: | http://hdl.handle.net/10183/141103 |
Resumo: | The nitrogen content of SiO2/SiC (4H) structures annealed in NO and N2O has been measured using nuclear reaction analysis. Samples were annealed in 15N18O or 15N2O at 1000 °C at a static pressure of 10 mbar for either 1 or 4 h. Annealing in N2O incorporates ~1013 cm22 of N and annealing in NO incorporates ~1014 cm-2, both of which are an order of magnitude lower than in SiO2/Si. In the NO anneal, N is predominantly incorporated near the SiO2/SiC interface with an atomic concentration of ~0.5%. As in the nitridation of SiO2/Si, two features are observed in SiO2/SiC after the NO anneal: a surface exchange of O in the oxide with the gas phase and NO diffusion and reaction at the interface. The surface exchange reaction in SiO2/SiC is similar to SiO2/Si, but there is a large difference in the incorporation of N at the interface. |
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McDonald, K.Huang, M.B.Weller, R.A.Feldman, L.C.Williams, J.R.Stedile, Fernanda ChiarelloBaumvol, Israel Jacob RabinRadtke, Claudio2016-05-14T02:08:03Z20000003-6951http://hdl.handle.net/10183/141103000269708The nitrogen content of SiO2/SiC (4H) structures annealed in NO and N2O has been measured using nuclear reaction analysis. Samples were annealed in 15N18O or 15N2O at 1000 °C at a static pressure of 10 mbar for either 1 or 4 h. Annealing in N2O incorporates ~1013 cm22 of N and annealing in NO incorporates ~1014 cm-2, both of which are an order of magnitude lower than in SiO2/Si. In the NO anneal, N is predominantly incorporated near the SiO2/SiC interface with an atomic concentration of ~0.5%. As in the nitridation of SiO2/Si, two features are observed in SiO2/SiC after the NO anneal: a surface exchange of O in the oxide with the gas phase and NO diffusion and reaction at the interface. The surface exchange reaction in SiO2/SiC is similar to SiO2/Si, but there is a large difference in the incorporation of N at the interface.application/pdfengApplied physics letters. Melville. Vol. 76, no. 5 (Jan. 2000), p. 568-570RecozimentoInterdifusao quimicaDopagem de semicondutoresInterfaces semicondutor-isolanteTrocas químicasNitretaçãoInterfacesAnálise química nuclearFilmes finosSilícioNitrogênioOxidaçãoComparison of nitrogen incorporation in SiO/sub 2//SiC and SiO/sub 2/Si structuresEstrangeiroinfo:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/openAccessreponame:Repositório Institucional da UFRGSinstname:Universidade Federal do Rio Grande do Sul (UFRGS)instacron:UFRGSORIGINAL000269708.pdf000269708.pdfTexto completo (inglês)application/pdf396461http://www.lume.ufrgs.br/bitstream/10183/141103/1/000269708.pdfcc1a054dc935d0c263ab2e2b643569adMD51TEXT000269708.pdf.txt000269708.pdf.txtExtracted Texttext/plain17074http://www.lume.ufrgs.br/bitstream/10183/141103/2/000269708.pdf.txta59d1aa568c21b0e64bd5dcae5301e6aMD52THUMBNAIL000269708.pdf.jpg000269708.pdf.jpgGenerated Thumbnailimage/jpeg2225http://www.lume.ufrgs.br/bitstream/10183/141103/3/000269708.pdf.jpgd4acf2fc2051a36ead5573324a24e267MD5310183/1411032022-02-22 05:03:49.821051oai:www.lume.ufrgs.br:10183/141103Repositório de PublicaçõesPUBhttps://lume.ufrgs.br/oai/requestopendoar:2022-02-22T08:03:49Repositório Institucional da UFRGS - Universidade Federal do Rio Grande do Sul (UFRGS)false |
dc.title.pt_BR.fl_str_mv |
Comparison of nitrogen incorporation in SiO/sub 2//SiC and SiO/sub 2/Si structures |
title |
Comparison of nitrogen incorporation in SiO/sub 2//SiC and SiO/sub 2/Si structures |
spellingShingle |
Comparison of nitrogen incorporation in SiO/sub 2//SiC and SiO/sub 2/Si structures McDonald, K. Recozimento Interdifusao quimica Dopagem de semicondutores Interfaces semicondutor-isolante Trocas químicas Nitretação Interfaces Análise química nuclear Filmes finos Silício Nitrogênio Oxidação |
title_short |
Comparison of nitrogen incorporation in SiO/sub 2//SiC and SiO/sub 2/Si structures |
title_full |
Comparison of nitrogen incorporation in SiO/sub 2//SiC and SiO/sub 2/Si structures |
title_fullStr |
Comparison of nitrogen incorporation in SiO/sub 2//SiC and SiO/sub 2/Si structures |
title_full_unstemmed |
Comparison of nitrogen incorporation in SiO/sub 2//SiC and SiO/sub 2/Si structures |
title_sort |
Comparison of nitrogen incorporation in SiO/sub 2//SiC and SiO/sub 2/Si structures |
author |
McDonald, K. |
author_facet |
McDonald, K. Huang, M.B. Weller, R.A. Feldman, L.C. Williams, J.R. Stedile, Fernanda Chiarello Baumvol, Israel Jacob Rabin Radtke, Claudio |
author_role |
author |
author2 |
Huang, M.B. Weller, R.A. Feldman, L.C. Williams, J.R. Stedile, Fernanda Chiarello Baumvol, Israel Jacob Rabin Radtke, Claudio |
author2_role |
author author author author author author author |
dc.contributor.author.fl_str_mv |
McDonald, K. Huang, M.B. Weller, R.A. Feldman, L.C. Williams, J.R. Stedile, Fernanda Chiarello Baumvol, Israel Jacob Rabin Radtke, Claudio |
dc.subject.por.fl_str_mv |
Recozimento Interdifusao quimica Dopagem de semicondutores Interfaces semicondutor-isolante Trocas químicas Nitretação Interfaces Análise química nuclear Filmes finos Silício Nitrogênio Oxidação |
topic |
Recozimento Interdifusao quimica Dopagem de semicondutores Interfaces semicondutor-isolante Trocas químicas Nitretação Interfaces Análise química nuclear Filmes finos Silício Nitrogênio Oxidação |
description |
The nitrogen content of SiO2/SiC (4H) structures annealed in NO and N2O has been measured using nuclear reaction analysis. Samples were annealed in 15N18O or 15N2O at 1000 °C at a static pressure of 10 mbar for either 1 or 4 h. Annealing in N2O incorporates ~1013 cm22 of N and annealing in NO incorporates ~1014 cm-2, both of which are an order of magnitude lower than in SiO2/Si. In the NO anneal, N is predominantly incorporated near the SiO2/SiC interface with an atomic concentration of ~0.5%. As in the nitridation of SiO2/Si, two features are observed in SiO2/SiC after the NO anneal: a surface exchange of O in the oxide with the gas phase and NO diffusion and reaction at the interface. The surface exchange reaction in SiO2/SiC is similar to SiO2/Si, but there is a large difference in the incorporation of N at the interface. |
publishDate |
2000 |
dc.date.issued.fl_str_mv |
2000 |
dc.date.accessioned.fl_str_mv |
2016-05-14T02:08:03Z |
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Estrangeiro info:eu-repo/semantics/article |
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0003-6951 |
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000269708 |
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http://hdl.handle.net/10183/141103 |
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dc.relation.ispartof.pt_BR.fl_str_mv |
Applied physics letters. Melville. Vol. 76, no. 5 (Jan. 2000), p. 568-570 |
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