Effects of post-deposition annealing in O/sub 2/ on the electrical characteristics of LaAlO/sub 3/ films on Si

Detalhes bibliográficos
Autor(a) principal: Miotti, Leonardo
Data de Publicação: 2005
Outros Autores: Bastos, Karen Paz, Driemeier, Carlos Eduardo, Edon, Vincent, Hugon, Marie-Christine, Agius, Bernard, Baumvol, Israel Jacob Rabin
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Institucional da UFRGS
Texto Completo: http://hdl.handle.net/10183/141348
Resumo: LaAlO3 films were deposited on p-type Si 100 by sputtering from a LaAlO3 target. C V characteristics were determined in nonannealed and O2-annealed capacitors having LaAlO3 films as dielectric and RuO2 as top electrode. Thermal annealing in O2 atmosphere reduced flat band voltage to acceptable values for advanced Si-based devices. 16O–18O isotopic substitution was characterized by Rutherford backscattering spectrometry and nuclear resonant reaction profiling. Chemical analysis of the films was accomplished by x-ray photoelectron spectroscopy. The electrical improvements observed after thermal annealing in O2 were attributed to the incorporation of oxygen from the gas phase, possibly healing oxygen vacancies in the films and providing mobile oxygen to the interface
id UFRGS-2_59af100c8b56c222ba6642cbf2c7f51a
oai_identifier_str oai:www.lume.ufrgs.br:10183/141348
network_acronym_str UFRGS-2
network_name_str Repositório Institucional da UFRGS
repository_id_str
spelling Miotti, LeonardoBastos, Karen PazDriemeier, Carlos EduardoEdon, VincentHugon, Marie-ChristineAgius, BernardBaumvol, Israel Jacob Rabin2016-05-19T02:10:05Z20050003-6951http://hdl.handle.net/10183/141348000530614LaAlO3 films were deposited on p-type Si 100 by sputtering from a LaAlO3 target. C V characteristics were determined in nonannealed and O2-annealed capacitors having LaAlO3 films as dielectric and RuO2 as top electrode. Thermal annealing in O2 atmosphere reduced flat band voltage to acceptable values for advanced Si-based devices. 16O–18O isotopic substitution was characterized by Rutherford backscattering spectrometry and nuclear resonant reaction profiling. Chemical analysis of the films was accomplished by x-ray photoelectron spectroscopy. The electrical improvements observed after thermal annealing in O2 were attributed to the incorporation of oxygen from the gas phase, possibly healing oxygen vacancies in the films and providing mobile oxygen to the interfaceapplication/pdfengApplied Physics Letters. New York. Vol. 87, no. 2 (July 2005), 022901, 3 p.Física da matéria condensadaAnálise químicaTrocas químicasMateriais dielétricosFilmes finos dieletricosSemicondutores elementaresRetroespalhamento rutherfordInterfaces semicondutor-isolanteSilícioVacancias cristalEspectros de raio x de fotoeletronsDeposição por sputteringEffects of post-deposition annealing in O/sub 2/ on the electrical characteristics of LaAlO/sub 3/ films on SiEstrangeiroinfo:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/openAccessreponame:Repositório Institucional da UFRGSinstname:Universidade Federal do Rio Grande do Sul (UFRGS)instacron:UFRGSORIGINAL000530614.pdf000530614.pdfTexto completo (inglês)application/pdf437023http://www.lume.ufrgs.br/bitstream/10183/141348/1/000530614.pdff7b89370e0e289ef91a5fe4c8044e659MD51TEXT000530614.pdf.txt000530614.pdf.txtExtracted Texttext/plain18511http://www.lume.ufrgs.br/bitstream/10183/141348/2/000530614.pdf.txt8fb34c6edf5ea9d3dcc5afd9fd9d509eMD52THUMBNAIL000530614.pdf.jpg000530614.pdf.jpgGenerated Thumbnailimage/jpeg2253http://www.lume.ufrgs.br/bitstream/10183/141348/3/000530614.pdf.jpg51de2cd093e287c7b88efbaa32333828MD5310183/1413482022-02-22 04:51:38.468036oai:www.lume.ufrgs.br:10183/141348Repositório de PublicaçõesPUBhttps://lume.ufrgs.br/oai/requestopendoar:2022-02-22T07:51:38Repositório Institucional da UFRGS - Universidade Federal do Rio Grande do Sul (UFRGS)false
dc.title.pt_BR.fl_str_mv Effects of post-deposition annealing in O/sub 2/ on the electrical characteristics of LaAlO/sub 3/ films on Si
title Effects of post-deposition annealing in O/sub 2/ on the electrical characteristics of LaAlO/sub 3/ films on Si
spellingShingle Effects of post-deposition annealing in O/sub 2/ on the electrical characteristics of LaAlO/sub 3/ films on Si
Miotti, Leonardo
Física da matéria condensada
Análise química
Trocas químicas
Materiais dielétricos
Filmes finos dieletricos
Semicondutores elementares
Retroespalhamento rutherford
Interfaces semicondutor-isolante
Silício
Vacancias cristal
Espectros de raio x de fotoeletrons
Deposição por sputtering
title_short Effects of post-deposition annealing in O/sub 2/ on the electrical characteristics of LaAlO/sub 3/ films on Si
title_full Effects of post-deposition annealing in O/sub 2/ on the electrical characteristics of LaAlO/sub 3/ films on Si
title_fullStr Effects of post-deposition annealing in O/sub 2/ on the electrical characteristics of LaAlO/sub 3/ films on Si
title_full_unstemmed Effects of post-deposition annealing in O/sub 2/ on the electrical characteristics of LaAlO/sub 3/ films on Si
title_sort Effects of post-deposition annealing in O/sub 2/ on the electrical characteristics of LaAlO/sub 3/ films on Si
author Miotti, Leonardo
author_facet Miotti, Leonardo
Bastos, Karen Paz
Driemeier, Carlos Eduardo
Edon, Vincent
Hugon, Marie-Christine
Agius, Bernard
Baumvol, Israel Jacob Rabin
author_role author
author2 Bastos, Karen Paz
Driemeier, Carlos Eduardo
Edon, Vincent
Hugon, Marie-Christine
Agius, Bernard
Baumvol, Israel Jacob Rabin
author2_role author
author
author
author
author
author
dc.contributor.author.fl_str_mv Miotti, Leonardo
Bastos, Karen Paz
Driemeier, Carlos Eduardo
Edon, Vincent
Hugon, Marie-Christine
Agius, Bernard
Baumvol, Israel Jacob Rabin
dc.subject.por.fl_str_mv Física da matéria condensada
Análise química
Trocas químicas
Materiais dielétricos
Filmes finos dieletricos
Semicondutores elementares
Retroespalhamento rutherford
Interfaces semicondutor-isolante
Silício
Vacancias cristal
Espectros de raio x de fotoeletrons
Deposição por sputtering
topic Física da matéria condensada
Análise química
Trocas químicas
Materiais dielétricos
Filmes finos dieletricos
Semicondutores elementares
Retroespalhamento rutherford
Interfaces semicondutor-isolante
Silício
Vacancias cristal
Espectros de raio x de fotoeletrons
Deposição por sputtering
description LaAlO3 films were deposited on p-type Si 100 by sputtering from a LaAlO3 target. C V characteristics were determined in nonannealed and O2-annealed capacitors having LaAlO3 films as dielectric and RuO2 as top electrode. Thermal annealing in O2 atmosphere reduced flat band voltage to acceptable values for advanced Si-based devices. 16O–18O isotopic substitution was characterized by Rutherford backscattering spectrometry and nuclear resonant reaction profiling. Chemical analysis of the films was accomplished by x-ray photoelectron spectroscopy. The electrical improvements observed after thermal annealing in O2 were attributed to the incorporation of oxygen from the gas phase, possibly healing oxygen vacancies in the films and providing mobile oxygen to the interface
publishDate 2005
dc.date.issued.fl_str_mv 2005
dc.date.accessioned.fl_str_mv 2016-05-19T02:10:05Z
dc.type.driver.fl_str_mv Estrangeiro
info:eu-repo/semantics/article
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://hdl.handle.net/10183/141348
dc.identifier.issn.pt_BR.fl_str_mv 0003-6951
dc.identifier.nrb.pt_BR.fl_str_mv 000530614
identifier_str_mv 0003-6951
000530614
url http://hdl.handle.net/10183/141348
dc.language.iso.fl_str_mv eng
language eng
dc.relation.ispartof.pt_BR.fl_str_mv Applied Physics Letters. New York. Vol. 87, no. 2 (July 2005), 022901, 3 p.
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.source.none.fl_str_mv reponame:Repositório Institucional da UFRGS
instname:Universidade Federal do Rio Grande do Sul (UFRGS)
instacron:UFRGS
instname_str Universidade Federal do Rio Grande do Sul (UFRGS)
instacron_str UFRGS
institution UFRGS
reponame_str Repositório Institucional da UFRGS
collection Repositório Institucional da UFRGS
bitstream.url.fl_str_mv http://www.lume.ufrgs.br/bitstream/10183/141348/1/000530614.pdf
http://www.lume.ufrgs.br/bitstream/10183/141348/2/000530614.pdf.txt
http://www.lume.ufrgs.br/bitstream/10183/141348/3/000530614.pdf.jpg
bitstream.checksum.fl_str_mv f7b89370e0e289ef91a5fe4c8044e659
8fb34c6edf5ea9d3dcc5afd9fd9d509e
51de2cd093e287c7b88efbaa32333828
bitstream.checksumAlgorithm.fl_str_mv MD5
MD5
MD5
repository.name.fl_str_mv Repositório Institucional da UFRGS - Universidade Federal do Rio Grande do Sul (UFRGS)
repository.mail.fl_str_mv
_version_ 1801224900232347648

Registros relacionados