Effects of post-deposition annealing in O/sub 2/ on the electrical characteristics of LaAlO/sub 3/ films on Si
Autor(a) principal: | |
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Data de Publicação: | 2005 |
Outros Autores: | , , , , , |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Repositório Institucional da UFRGS |
Texto Completo: | http://hdl.handle.net/10183/141348 |
Resumo: | LaAlO3 films were deposited on p-type Si 100 by sputtering from a LaAlO3 target. C V characteristics were determined in nonannealed and O2-annealed capacitors having LaAlO3 films as dielectric and RuO2 as top electrode. Thermal annealing in O2 atmosphere reduced flat band voltage to acceptable values for advanced Si-based devices. 16O–18O isotopic substitution was characterized by Rutherford backscattering spectrometry and nuclear resonant reaction profiling. Chemical analysis of the films was accomplished by x-ray photoelectron spectroscopy. The electrical improvements observed after thermal annealing in O2 were attributed to the incorporation of oxygen from the gas phase, possibly healing oxygen vacancies in the films and providing mobile oxygen to the interface |
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Miotti, LeonardoBastos, Karen PazDriemeier, Carlos EduardoEdon, VincentHugon, Marie-ChristineAgius, BernardBaumvol, Israel Jacob Rabin2016-05-19T02:10:05Z20050003-6951http://hdl.handle.net/10183/141348000530614LaAlO3 films were deposited on p-type Si 100 by sputtering from a LaAlO3 target. C V characteristics were determined in nonannealed and O2-annealed capacitors having LaAlO3 films as dielectric and RuO2 as top electrode. Thermal annealing in O2 atmosphere reduced flat band voltage to acceptable values for advanced Si-based devices. 16O–18O isotopic substitution was characterized by Rutherford backscattering spectrometry and nuclear resonant reaction profiling. Chemical analysis of the films was accomplished by x-ray photoelectron spectroscopy. The electrical improvements observed after thermal annealing in O2 were attributed to the incorporation of oxygen from the gas phase, possibly healing oxygen vacancies in the films and providing mobile oxygen to the interfaceapplication/pdfengApplied Physics Letters. New York. Vol. 87, no. 2 (July 2005), 022901, 3 p.Física da matéria condensadaAnálise químicaTrocas químicasMateriais dielétricosFilmes finos dieletricosSemicondutores elementaresRetroespalhamento rutherfordInterfaces semicondutor-isolanteSilícioVacancias cristalEspectros de raio x de fotoeletronsDeposição por sputteringEffects of post-deposition annealing in O/sub 2/ on the electrical characteristics of LaAlO/sub 3/ films on SiEstrangeiroinfo:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/openAccessreponame:Repositório Institucional da UFRGSinstname:Universidade Federal do Rio Grande do Sul (UFRGS)instacron:UFRGSORIGINAL000530614.pdf000530614.pdfTexto completo (inglês)application/pdf437023http://www.lume.ufrgs.br/bitstream/10183/141348/1/000530614.pdff7b89370e0e289ef91a5fe4c8044e659MD51TEXT000530614.pdf.txt000530614.pdf.txtExtracted Texttext/plain18511http://www.lume.ufrgs.br/bitstream/10183/141348/2/000530614.pdf.txt8fb34c6edf5ea9d3dcc5afd9fd9d509eMD52THUMBNAIL000530614.pdf.jpg000530614.pdf.jpgGenerated Thumbnailimage/jpeg2253http://www.lume.ufrgs.br/bitstream/10183/141348/3/000530614.pdf.jpg51de2cd093e287c7b88efbaa32333828MD5310183/1413482022-02-22 04:51:38.468036oai:www.lume.ufrgs.br:10183/141348Repositório de PublicaçõesPUBhttps://lume.ufrgs.br/oai/requestopendoar:2022-02-22T07:51:38Repositório Institucional da UFRGS - Universidade Federal do Rio Grande do Sul (UFRGS)false |
dc.title.pt_BR.fl_str_mv |
Effects of post-deposition annealing in O/sub 2/ on the electrical characteristics of LaAlO/sub 3/ films on Si |
title |
Effects of post-deposition annealing in O/sub 2/ on the electrical characteristics of LaAlO/sub 3/ films on Si |
spellingShingle |
Effects of post-deposition annealing in O/sub 2/ on the electrical characteristics of LaAlO/sub 3/ films on Si Miotti, Leonardo Física da matéria condensada Análise química Trocas químicas Materiais dielétricos Filmes finos dieletricos Semicondutores elementares Retroespalhamento rutherford Interfaces semicondutor-isolante Silício Vacancias cristal Espectros de raio x de fotoeletrons Deposição por sputtering |
title_short |
Effects of post-deposition annealing in O/sub 2/ on the electrical characteristics of LaAlO/sub 3/ films on Si |
title_full |
Effects of post-deposition annealing in O/sub 2/ on the electrical characteristics of LaAlO/sub 3/ films on Si |
title_fullStr |
Effects of post-deposition annealing in O/sub 2/ on the electrical characteristics of LaAlO/sub 3/ films on Si |
title_full_unstemmed |
Effects of post-deposition annealing in O/sub 2/ on the electrical characteristics of LaAlO/sub 3/ films on Si |
title_sort |
Effects of post-deposition annealing in O/sub 2/ on the electrical characteristics of LaAlO/sub 3/ films on Si |
author |
Miotti, Leonardo |
author_facet |
Miotti, Leonardo Bastos, Karen Paz Driemeier, Carlos Eduardo Edon, Vincent Hugon, Marie-Christine Agius, Bernard Baumvol, Israel Jacob Rabin |
author_role |
author |
author2 |
Bastos, Karen Paz Driemeier, Carlos Eduardo Edon, Vincent Hugon, Marie-Christine Agius, Bernard Baumvol, Israel Jacob Rabin |
author2_role |
author author author author author author |
dc.contributor.author.fl_str_mv |
Miotti, Leonardo Bastos, Karen Paz Driemeier, Carlos Eduardo Edon, Vincent Hugon, Marie-Christine Agius, Bernard Baumvol, Israel Jacob Rabin |
dc.subject.por.fl_str_mv |
Física da matéria condensada Análise química Trocas químicas Materiais dielétricos Filmes finos dieletricos Semicondutores elementares Retroespalhamento rutherford Interfaces semicondutor-isolante Silício Vacancias cristal Espectros de raio x de fotoeletrons Deposição por sputtering |
topic |
Física da matéria condensada Análise química Trocas químicas Materiais dielétricos Filmes finos dieletricos Semicondutores elementares Retroespalhamento rutherford Interfaces semicondutor-isolante Silício Vacancias cristal Espectros de raio x de fotoeletrons Deposição por sputtering |
description |
LaAlO3 films were deposited on p-type Si 100 by sputtering from a LaAlO3 target. C V characteristics were determined in nonannealed and O2-annealed capacitors having LaAlO3 films as dielectric and RuO2 as top electrode. Thermal annealing in O2 atmosphere reduced flat band voltage to acceptable values for advanced Si-based devices. 16O–18O isotopic substitution was characterized by Rutherford backscattering spectrometry and nuclear resonant reaction profiling. Chemical analysis of the films was accomplished by x-ray photoelectron spectroscopy. The electrical improvements observed after thermal annealing in O2 were attributed to the incorporation of oxygen from the gas phase, possibly healing oxygen vacancies in the films and providing mobile oxygen to the interface |
publishDate |
2005 |
dc.date.issued.fl_str_mv |
2005 |
dc.date.accessioned.fl_str_mv |
2016-05-19T02:10:05Z |
dc.type.driver.fl_str_mv |
Estrangeiro info:eu-repo/semantics/article |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
format |
article |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://hdl.handle.net/10183/141348 |
dc.identifier.issn.pt_BR.fl_str_mv |
0003-6951 |
dc.identifier.nrb.pt_BR.fl_str_mv |
000530614 |
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url |
http://hdl.handle.net/10183/141348 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.ispartof.pt_BR.fl_str_mv |
Applied Physics Letters. New York. Vol. 87, no. 2 (July 2005), 022901, 3 p. |
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info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
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application/pdf |
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