Water vapor interaction with silicon oxide films thermally grown on 6H-SiC and Si

Detalhes bibliográficos
Autor(a) principal: Soares, Gabriel Vieira
Data de Publicação: 2009
Outros Autores: Baumvol, Israel Jacob Rabin, Corrêa, Silma Alberton, Radtke, Claudio, Stedile, Fernanda Chiarello
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Institucional da UFRGS
Texto Completo: http://hdl.handle.net/10183/141707
Resumo: Thermally induced incorporation of isotopically labeled water vapor D2 18O species in 7 nm thick SiO2 films thermally grown on 6H-SiC 0001 and on Si 001 were investigated. Higher incorporation of hydrogen and higher isotopic exchange were observed in SiO2 /SiC as compared to SiO2 / Si, at temperatures above 600 °C, which can lead to electrical instabilities, especially in high-temperature devices. At any annealing temperature, oxygen is incorporated in the oxide films, reaching the SiO2 /SiC interface, in contrast with SiO2 / Si. The present observations show that strict control of water vapor contents in SiO2 /SiC is mandatory in order to achieve further improvements in the SiC-based device technology.
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spelling Soares, Gabriel VieiraBaumvol, Israel Jacob RabinCorrêa, Silma AlbertonRadtke, ClaudioStedile, Fernanda Chiarello2016-05-24T02:10:49Z20090003-6951http://hdl.handle.net/10183/141707000733795Thermally induced incorporation of isotopically labeled water vapor D2 18O species in 7 nm thick SiO2 films thermally grown on 6H-SiC 0001 and on Si 001 were investigated. Higher incorporation of hydrogen and higher isotopic exchange were observed in SiO2 /SiC as compared to SiO2 / Si, at temperatures above 600 °C, which can lead to electrical instabilities, especially in high-temperature devices. At any annealing temperature, oxygen is incorporated in the oxide films, reaching the SiO2 /SiC interface, in contrast with SiO2 / Si. The present observations show that strict control of water vapor contents in SiO2 /SiC is mandatory in order to achieve further improvements in the SiC-based device technology.application/pdfengApplied physics letters. New York. Vol. 95, no. 19 (Sept. 2009), 191912, 3 p.Carbeto de silícioFilmes finosSemicondutores elementaresSemicondutores de gap largoTrocas químicasWater vapor interaction with silicon oxide films thermally grown on 6H-SiC and SiEstrangeiroinfo:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/openAccessreponame:Repositório Institucional da UFRGSinstname:Universidade Federal do Rio Grande do Sul (UFRGS)instacron:UFRGSORIGINAL000733795.pdf000733795.pdfTexto completo (inglês)application/pdf650723http://www.lume.ufrgs.br/bitstream/10183/141707/1/000733795.pdf9b060e0400519cc604991186f0c09c19MD51TEXT000733795.pdf.txt000733795.pdf.txtExtracted Texttext/plain17264http://www.lume.ufrgs.br/bitstream/10183/141707/2/000733795.pdf.txt4f0f1d481b906aed1f314f95f0ecdc21MD52THUMBNAIL000733795.pdf.jpg000733795.pdf.jpgGenerated Thumbnailimage/jpeg2197http://www.lume.ufrgs.br/bitstream/10183/141707/3/000733795.pdf.jpg3dc613f0eb9b2633c31b69dbf873aa85MD5310183/1417072021-05-26 04:34:13.188281oai:www.lume.ufrgs.br:10183/141707Repositório de PublicaçõesPUBhttps://lume.ufrgs.br/oai/requestopendoar:2021-05-26T07:34:13Repositório Institucional da UFRGS - Universidade Federal do Rio Grande do Sul (UFRGS)false
dc.title.pt_BR.fl_str_mv Water vapor interaction with silicon oxide films thermally grown on 6H-SiC and Si
title Water vapor interaction with silicon oxide films thermally grown on 6H-SiC and Si
spellingShingle Water vapor interaction with silicon oxide films thermally grown on 6H-SiC and Si
Soares, Gabriel Vieira
Carbeto de silício
Filmes finos
Semicondutores elementares
Semicondutores de gap largo
Trocas químicas
title_short Water vapor interaction with silicon oxide films thermally grown on 6H-SiC and Si
title_full Water vapor interaction with silicon oxide films thermally grown on 6H-SiC and Si
title_fullStr Water vapor interaction with silicon oxide films thermally grown on 6H-SiC and Si
title_full_unstemmed Water vapor interaction with silicon oxide films thermally grown on 6H-SiC and Si
title_sort Water vapor interaction with silicon oxide films thermally grown on 6H-SiC and Si
author Soares, Gabriel Vieira
author_facet Soares, Gabriel Vieira
Baumvol, Israel Jacob Rabin
Corrêa, Silma Alberton
Radtke, Claudio
Stedile, Fernanda Chiarello
author_role author
author2 Baumvol, Israel Jacob Rabin
Corrêa, Silma Alberton
Radtke, Claudio
Stedile, Fernanda Chiarello
author2_role author
author
author
author
dc.contributor.author.fl_str_mv Soares, Gabriel Vieira
Baumvol, Israel Jacob Rabin
Corrêa, Silma Alberton
Radtke, Claudio
Stedile, Fernanda Chiarello
dc.subject.por.fl_str_mv Carbeto de silício
Filmes finos
Semicondutores elementares
Semicondutores de gap largo
Trocas químicas
topic Carbeto de silício
Filmes finos
Semicondutores elementares
Semicondutores de gap largo
Trocas químicas
description Thermally induced incorporation of isotopically labeled water vapor D2 18O species in 7 nm thick SiO2 films thermally grown on 6H-SiC 0001 and on Si 001 were investigated. Higher incorporation of hydrogen and higher isotopic exchange were observed in SiO2 /SiC as compared to SiO2 / Si, at temperatures above 600 °C, which can lead to electrical instabilities, especially in high-temperature devices. At any annealing temperature, oxygen is incorporated in the oxide films, reaching the SiO2 /SiC interface, in contrast with SiO2 / Si. The present observations show that strict control of water vapor contents in SiO2 /SiC is mandatory in order to achieve further improvements in the SiC-based device technology.
publishDate 2009
dc.date.issued.fl_str_mv 2009
dc.date.accessioned.fl_str_mv 2016-05-24T02:10:49Z
dc.type.driver.fl_str_mv Estrangeiro
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dc.identifier.uri.fl_str_mv http://hdl.handle.net/10183/141707
dc.identifier.issn.pt_BR.fl_str_mv 0003-6951
dc.identifier.nrb.pt_BR.fl_str_mv 000733795
identifier_str_mv 0003-6951
000733795
url http://hdl.handle.net/10183/141707
dc.language.iso.fl_str_mv eng
language eng
dc.relation.ispartof.pt_BR.fl_str_mv Applied physics letters. New York. Vol. 95, no. 19 (Sept. 2009), 191912, 3 p.
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