Dynamics of thermal growth of silicon oxide films on Si

• Autor(a) principal: Almeida, Rita Maria Cunha de
• Data de Publicação: 2000
• Outros Autores: Goncalves, Sebastian, Baumvol, Israel Jacob Rabin, Stedile, Fernanda Chiarello
• Tipo de documento: Artigo
• Idioma: eng
• Título da fonte: Repositório Institucional da UFRGS
• Texto Completo: http://hdl.handle.net/10183/103853
• topic: Difusão; Semicondutores elementares; Oxidação; Silicones; Filmes finos; Silício; Expansão térmica

Thermal growth of silicon oxide films on Si in dry O₂ is modeled as a dynamical system, assuming that it is basically a reaction-diffusion phenomenon. Relevant findings of the last decade are incorporated, as structure and composition of the oxide/Si interface and O₂ transport and reaction at initial stages of growth. The present model departs from the well-established Deal and Grove framework [B. E. Deal and A. S. Grove, J. Appl. Phys. 36, 3770 (1965)] indicating that its basic assumptions, steady-state regime, and reaction between O₂ and Si at a sharp oxide/Si interface are only attained asymptotically. Scaling properties of these model equations are explored, and experimental growth kinetics, obtained for a wide range of growth parameters including the small thickness range, are shown to be well described by the model.