Latent ion tracks in amorphous silicon
Autor(a) principal: | |
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Data de Publicação: | 2013 |
Outros Autores: | , , , , , , , , , , , , |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Repositório Institucional da UFRGS |
Texto Completo: | http://hdl.handle.net/10183/104567 |
Resumo: | We present experimental evidence for the formation of ion tracks in amorphous Si induced by swift heavy-ion irradiation. An underlying core-shell structure consistent with remnants of a high-density liquid structure was revealed by small-angle x-ray scattering and molecular dynamics simulations. Ion track dimensions differ for as-implanted and relaxed Si as attributed to differentmicrostructures andmelting temperatures. The identification and characterization of ion tracks in amorphous Si yields new insight into mechanisms of damage formation due to swift heavy-ion irradiation in amorphous semiconductors. |
id |
UFRGS-2_6f7c4e13ffcc55ed4b75c424cc834a4d |
---|---|
oai_identifier_str |
oai:www.lume.ufrgs.br:10183/104567 |
network_acronym_str |
UFRGS-2 |
network_name_str |
Repositório Institucional da UFRGS |
repository_id_str |
|
spelling |
Bierschenk, ThomasGiulian, RaquelAfra, BoshraRodriguez, M. D.Schauries, DanielMudie, StephenPakarinen, O. H.Djurabekova, F.Nordlund, K.Osmani, O.Medvedev, N.Rethfeld, B.Ridgway, M.C.Kluth, Patrick2014-10-15T02:12:42Z20131098-0121http://hdl.handle.net/10183/104567000906992We present experimental evidence for the formation of ion tracks in amorphous Si induced by swift heavy-ion irradiation. An underlying core-shell structure consistent with remnants of a high-density liquid structure was revealed by small-angle x-ray scattering and molecular dynamics simulations. Ion track dimensions differ for as-implanted and relaxed Si as attributed to differentmicrostructures andmelting temperatures. The identification and characterization of ion tracks in amorphous Si yields new insight into mechanisms of damage formation due to swift heavy-ion irradiation in amorphous semiconductors.application/pdfengPhysical review. B, Condensed matter and materials physics. Woodbury. Vol. 88, no. 17 (Nov. 2013), 174111, 5 p.Dinâmica molecularEfeitos de radiaçãoMicroestrutura cristalinaSemicondutores amorfosSemicondutores elementaresSilícioLatent ion tracks in amorphous siliconEstrangeiroinfo:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/openAccessreponame:Repositório Institucional da UFRGSinstname:Universidade Federal do Rio Grande do Sul (UFRGS)instacron:UFRGSORIGINAL000906992.pdf000906992.pdfTexto completo (inglês)application/pdf597499http://www.lume.ufrgs.br/bitstream/10183/104567/1/000906992.pdf9ac16257ab6682cf4a063aac432ac600MD51TEXT000906992.pdf.txt000906992.pdf.txtExtracted Texttext/plain27601http://www.lume.ufrgs.br/bitstream/10183/104567/2/000906992.pdf.txt603a611da0f673b45a33ccee23a15c36MD52THUMBNAIL000906992.pdf.jpg000906992.pdf.jpgGenerated Thumbnailimage/jpeg2139http://www.lume.ufrgs.br/bitstream/10183/104567/3/000906992.pdf.jpgccf3a7f0c26d16dccfd1d564bb2d8f37MD5310183/1045672023-07-12 03:35:19.104845oai:www.lume.ufrgs.br:10183/104567Repositório de PublicaçõesPUBhttps://lume.ufrgs.br/oai/requestopendoar:2023-07-12T06:35:19Repositório Institucional da UFRGS - Universidade Federal do Rio Grande do Sul (UFRGS)false |
dc.title.pt_BR.fl_str_mv |
Latent ion tracks in amorphous silicon |
title |
Latent ion tracks in amorphous silicon |
spellingShingle |
Latent ion tracks in amorphous silicon Bierschenk, Thomas Dinâmica molecular Efeitos de radiação Microestrutura cristalina Semicondutores amorfos Semicondutores elementares Silício |
title_short |
Latent ion tracks in amorphous silicon |
title_full |
Latent ion tracks in amorphous silicon |
title_fullStr |
Latent ion tracks in amorphous silicon |
title_full_unstemmed |
Latent ion tracks in amorphous silicon |
title_sort |
Latent ion tracks in amorphous silicon |
author |
Bierschenk, Thomas |
author_facet |
Bierschenk, Thomas Giulian, Raquel Afra, Boshra Rodriguez, M. D. Schauries, Daniel Mudie, Stephen Pakarinen, O. H. Djurabekova, F. Nordlund, K. Osmani, O. Medvedev, N. Rethfeld, B. Ridgway, M.C. Kluth, Patrick |
author_role |
author |
author2 |
Giulian, Raquel Afra, Boshra Rodriguez, M. D. Schauries, Daniel Mudie, Stephen Pakarinen, O. H. Djurabekova, F. Nordlund, K. Osmani, O. Medvedev, N. Rethfeld, B. Ridgway, M.C. Kluth, Patrick |
author2_role |
author author author author author author author author author author author author author |
dc.contributor.author.fl_str_mv |
Bierschenk, Thomas Giulian, Raquel Afra, Boshra Rodriguez, M. D. Schauries, Daniel Mudie, Stephen Pakarinen, O. H. Djurabekova, F. Nordlund, K. Osmani, O. Medvedev, N. Rethfeld, B. Ridgway, M.C. Kluth, Patrick |
dc.subject.por.fl_str_mv |
Dinâmica molecular Efeitos de radiação Microestrutura cristalina Semicondutores amorfos Semicondutores elementares Silício |
topic |
Dinâmica molecular Efeitos de radiação Microestrutura cristalina Semicondutores amorfos Semicondutores elementares Silício |
description |
We present experimental evidence for the formation of ion tracks in amorphous Si induced by swift heavy-ion irradiation. An underlying core-shell structure consistent with remnants of a high-density liquid structure was revealed by small-angle x-ray scattering and molecular dynamics simulations. Ion track dimensions differ for as-implanted and relaxed Si as attributed to differentmicrostructures andmelting temperatures. The identification and characterization of ion tracks in amorphous Si yields new insight into mechanisms of damage formation due to swift heavy-ion irradiation in amorphous semiconductors. |
publishDate |
2013 |
dc.date.issued.fl_str_mv |
2013 |
dc.date.accessioned.fl_str_mv |
2014-10-15T02:12:42Z |
dc.type.driver.fl_str_mv |
Estrangeiro info:eu-repo/semantics/article |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
format |
article |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://hdl.handle.net/10183/104567 |
dc.identifier.issn.pt_BR.fl_str_mv |
1098-0121 |
dc.identifier.nrb.pt_BR.fl_str_mv |
000906992 |
identifier_str_mv |
1098-0121 000906992 |
url |
http://hdl.handle.net/10183/104567 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.ispartof.pt_BR.fl_str_mv |
Physical review. B, Condensed matter and materials physics. Woodbury. Vol. 88, no. 17 (Nov. 2013), 174111, 5 p. |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
application/pdf |
dc.source.none.fl_str_mv |
reponame:Repositório Institucional da UFRGS instname:Universidade Federal do Rio Grande do Sul (UFRGS) instacron:UFRGS |
instname_str |
Universidade Federal do Rio Grande do Sul (UFRGS) |
instacron_str |
UFRGS |
institution |
UFRGS |
reponame_str |
Repositório Institucional da UFRGS |
collection |
Repositório Institucional da UFRGS |
bitstream.url.fl_str_mv |
http://www.lume.ufrgs.br/bitstream/10183/104567/1/000906992.pdf http://www.lume.ufrgs.br/bitstream/10183/104567/2/000906992.pdf.txt http://www.lume.ufrgs.br/bitstream/10183/104567/3/000906992.pdf.jpg |
bitstream.checksum.fl_str_mv |
9ac16257ab6682cf4a063aac432ac600 603a611da0f673b45a33ccee23a15c36 ccf3a7f0c26d16dccfd1d564bb2d8f37 |
bitstream.checksumAlgorithm.fl_str_mv |
MD5 MD5 MD5 |
repository.name.fl_str_mv |
Repositório Institucional da UFRGS - Universidade Federal do Rio Grande do Sul (UFRGS) |
repository.mail.fl_str_mv |
|
_version_ |
1801224853697593344 |