Effects of nitrogen incorporation on the interfacial layer between thermally grown dielectric films and SiC

Detalhes bibliográficos
Autor(a) principal: Corrêa, Silma Alberton
Data de Publicação: 2009
Outros Autores: Radtke, Claudio, Soares, Gabriel Vieira, Miotti, Leonardo, Baumvol, Israel Jacob Rabin, Dimitrijev, Sima, Han, J., Hold, L., Kong, F., Stedile, Fernanda Chiarello
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Institucional da UFRGS
Texto Completo: http://hdl.handle.net/10183/141728
Resumo: C-containing interlayers formed between the SiC substrate and dielectric films thermally grown in O2, NO, and in O2 followed by annealing in NO were investigated. X-ray reflectometry and x-ray photoelectron spectroscopy were used to determine N and C incorporation in dielectric films and interlayers, as well to determine their mass densities and thicknesses. The thickest C-containing interlayer was observed for films thermally grown in O2, whereas the thinnest one was observed for films directly grown in NO, evidencing that the presence of N decreases the amount of carbonaceous compounds in the dielectric/SiC interface region.
id UFRGS-2_793189192774da0571b5e4c9bcf2237f
oai_identifier_str oai:www.lume.ufrgs.br:10183/141728
network_acronym_str UFRGS-2
network_name_str Repositório Institucional da UFRGS
repository_id_str
spelling Corrêa, Silma AlbertonRadtke, ClaudioSoares, Gabriel VieiraMiotti, LeonardoBaumvol, Israel Jacob RabinDimitrijev, SimaHan, J.Hold, L.Kong, F.Stedile, Fernanda Chiarello2016-05-24T02:10:56Z20090003-6951http://hdl.handle.net/10183/141728000712927C-containing interlayers formed between the SiC substrate and dielectric films thermally grown in O2, NO, and in O2 followed by annealing in NO were investigated. X-ray reflectometry and x-ray photoelectron spectroscopy were used to determine N and C incorporation in dielectric films and interlayers, as well to determine their mass densities and thicknesses. The thickest C-containing interlayer was observed for films thermally grown in O2, whereas the thinnest one was observed for films directly grown in NO, evidencing that the presence of N decreases the amount of carbonaceous compounds in the dielectric/SiC interface region.application/pdfengApplied physics letters. New York. Vol. 94, no. 25 (June 2009), 251909, 3 p.Carbeto de silícioFilmes finos dieletricosNitrogênioSemicondutores de gap largoEffects of nitrogen incorporation on the interfacial layer between thermally grown dielectric films and SiCEstrangeiroinfo:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/openAccessreponame:Repositório Institucional da UFRGSinstname:Universidade Federal do Rio Grande do Sul (UFRGS)instacron:UFRGSORIGINAL000712927.pdf000712927.pdfTexto completo (inglês)application/pdf669128http://www.lume.ufrgs.br/bitstream/10183/141728/1/000712927.pdfdd88b7d511b34887839f802bacae8e66MD51TEXT000712927.pdf.txt000712927.pdf.txtExtracted Texttext/plain19038http://www.lume.ufrgs.br/bitstream/10183/141728/2/000712927.pdf.txt3cfe4b53c7a1ff7667bc7513cd899998MD52THUMBNAIL000712927.pdf.jpg000712927.pdf.jpgGenerated Thumbnailimage/jpeg2101http://www.lume.ufrgs.br/bitstream/10183/141728/3/000712927.pdf.jpgf869e2a827fc2b5cb2bfb0791b15b253MD5310183/1417282021-06-12 04:51:18.488914oai:www.lume.ufrgs.br:10183/141728Repositório de PublicaçõesPUBhttps://lume.ufrgs.br/oai/requestopendoar:2021-06-12T07:51:18Repositório Institucional da UFRGS - Universidade Federal do Rio Grande do Sul (UFRGS)false
dc.title.pt_BR.fl_str_mv Effects of nitrogen incorporation on the interfacial layer between thermally grown dielectric films and SiC
title Effects of nitrogen incorporation on the interfacial layer between thermally grown dielectric films and SiC
spellingShingle Effects of nitrogen incorporation on the interfacial layer between thermally grown dielectric films and SiC
Corrêa, Silma Alberton
Carbeto de silício
Filmes finos dieletricos
Nitrogênio
Semicondutores de gap largo
title_short Effects of nitrogen incorporation on the interfacial layer between thermally grown dielectric films and SiC
title_full Effects of nitrogen incorporation on the interfacial layer between thermally grown dielectric films and SiC
title_fullStr Effects of nitrogen incorporation on the interfacial layer between thermally grown dielectric films and SiC
title_full_unstemmed Effects of nitrogen incorporation on the interfacial layer between thermally grown dielectric films and SiC
title_sort Effects of nitrogen incorporation on the interfacial layer between thermally grown dielectric films and SiC
author Corrêa, Silma Alberton
author_facet Corrêa, Silma Alberton
Radtke, Claudio
Soares, Gabriel Vieira
Miotti, Leonardo
Baumvol, Israel Jacob Rabin
Dimitrijev, Sima
Han, J.
Hold, L.
Kong, F.
Stedile, Fernanda Chiarello
author_role author
author2 Radtke, Claudio
Soares, Gabriel Vieira
Miotti, Leonardo
Baumvol, Israel Jacob Rabin
Dimitrijev, Sima
Han, J.
Hold, L.
Kong, F.
Stedile, Fernanda Chiarello
author2_role author
author
author
author
author
author
author
author
author
dc.contributor.author.fl_str_mv Corrêa, Silma Alberton
Radtke, Claudio
Soares, Gabriel Vieira
Miotti, Leonardo
Baumvol, Israel Jacob Rabin
Dimitrijev, Sima
Han, J.
Hold, L.
Kong, F.
Stedile, Fernanda Chiarello
dc.subject.por.fl_str_mv Carbeto de silício
Filmes finos dieletricos
Nitrogênio
Semicondutores de gap largo
topic Carbeto de silício
Filmes finos dieletricos
Nitrogênio
Semicondutores de gap largo
description C-containing interlayers formed between the SiC substrate and dielectric films thermally grown in O2, NO, and in O2 followed by annealing in NO were investigated. X-ray reflectometry and x-ray photoelectron spectroscopy were used to determine N and C incorporation in dielectric films and interlayers, as well to determine their mass densities and thicknesses. The thickest C-containing interlayer was observed for films thermally grown in O2, whereas the thinnest one was observed for films directly grown in NO, evidencing that the presence of N decreases the amount of carbonaceous compounds in the dielectric/SiC interface region.
publishDate 2009
dc.date.issued.fl_str_mv 2009
dc.date.accessioned.fl_str_mv 2016-05-24T02:10:56Z
dc.type.driver.fl_str_mv Estrangeiro
info:eu-repo/semantics/article
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://hdl.handle.net/10183/141728
dc.identifier.issn.pt_BR.fl_str_mv 0003-6951
dc.identifier.nrb.pt_BR.fl_str_mv 000712927
identifier_str_mv 0003-6951
000712927
url http://hdl.handle.net/10183/141728
dc.language.iso.fl_str_mv eng
language eng
dc.relation.ispartof.pt_BR.fl_str_mv Applied physics letters. New York. Vol. 94, no. 25 (June 2009), 251909, 3 p.
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.source.none.fl_str_mv reponame:Repositório Institucional da UFRGS
instname:Universidade Federal do Rio Grande do Sul (UFRGS)
instacron:UFRGS
instname_str Universidade Federal do Rio Grande do Sul (UFRGS)
instacron_str UFRGS
institution UFRGS
reponame_str Repositório Institucional da UFRGS
collection Repositório Institucional da UFRGS
bitstream.url.fl_str_mv http://www.lume.ufrgs.br/bitstream/10183/141728/1/000712927.pdf
http://www.lume.ufrgs.br/bitstream/10183/141728/2/000712927.pdf.txt
http://www.lume.ufrgs.br/bitstream/10183/141728/3/000712927.pdf.jpg
bitstream.checksum.fl_str_mv dd88b7d511b34887839f802bacae8e66
3cfe4b53c7a1ff7667bc7513cd899998
f869e2a827fc2b5cb2bfb0791b15b253
bitstream.checksumAlgorithm.fl_str_mv MD5
MD5
MD5
repository.name.fl_str_mv Repositório Institucional da UFRGS - Universidade Federal do Rio Grande do Sul (UFRGS)
repository.mail.fl_str_mv
_version_ 1801224900771315712

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