Nitrogen implantation into amorphous carbon films: sims and positron annihilation analyses
Autor(a) principal: | |
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Data de Publicação: | 1996 |
Outros Autores: | , , , , , |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Repositório Institucional da UFRGS |
Texto Completo: | http://hdl.handle.net/10183/88638 |
Resumo: | Hard amorphous hydrogenated carbon films deposited by self-bias glow discharge were implanted at room temperature with 70 keV-nitrogen ions at fluences between 2.0 and 9.0 x 10 16 N/cm2. The implantation energy was chosen so that the projected range plus range straggling (Rp+∆Rp) was smaller than the film thickness. The implanted samples were analyzed by Raman scattering, Secondary ion mass spectrometry (SIMS) and positron annihilation spectroscopy, using the Doppler broadening technique with the determination of the shape parameter (S parameter). Depth profiles of implanted species agree well with the predictions of the Monte Carlo code, Transport of Ions in Matter (TRIM-90). For samples implanted with 2 x 1016 N/cm2 the S parameter follows the vacancies depth profile predicted by the simulation. For higher fluences we observed a reduction in the measured value of S. The first result was interpreted as being due to the point defects generated during the ion stopping, whereas the PAS results for higher fluences were due to the structural modifications (increase of disorder and of the number, or size, of the graphitic domains) induced in the carbon films by the incident ions combined with the point defects generated by the atomic collisions. |
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Freire Junior, Fernando LeiteFranceschini, Dante F.Achete, Carlos A.Baumvol, Israel Jacob RabinBrusa, R.S.Mariotto, GinoCanteri, R.2014-03-20T01:48:21Z19960103-9733http://hdl.handle.net/10183/88638000140516Hard amorphous hydrogenated carbon films deposited by self-bias glow discharge were implanted at room temperature with 70 keV-nitrogen ions at fluences between 2.0 and 9.0 x 10 16 N/cm2. The implantation energy was chosen so that the projected range plus range straggling (Rp+∆Rp) was smaller than the film thickness. The implanted samples were analyzed by Raman scattering, Secondary ion mass spectrometry (SIMS) and positron annihilation spectroscopy, using the Doppler broadening technique with the determination of the shape parameter (S parameter). Depth profiles of implanted species agree well with the predictions of the Monte Carlo code, Transport of Ions in Matter (TRIM-90). For samples implanted with 2 x 1016 N/cm2 the S parameter follows the vacancies depth profile predicted by the simulation. For higher fluences we observed a reduction in the measured value of S. The first result was interpreted as being due to the point defects generated during the ion stopping, whereas the PAS results for higher fluences were due to the structural modifications (increase of disorder and of the number, or size, of the graphitic domains) induced in the carbon films by the incident ions combined with the point defects generated by the atomic collisions.application/pdfengBrazilian Journal of Physics. São Paulo. Vol. 26, no. 1 (Mar. 1996), p. 353-358Física da matéria condensadaFilmes finosImplantação de íonsNitrogen implantation into amorphous carbon films: sims and positron annihilation analysesinfo:eu-repo/semantics/articleinfo:eu-repo/semantics/otherinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/openAccessreponame:Repositório Institucional da UFRGSinstname:Universidade Federal do Rio Grande do Sul (UFRGS)instacron:UFRGSORIGINAL000140516.pdf000140516.pdfTexto completo (inglês)application/pdf158406http://www.lume.ufrgs.br/bitstream/10183/88638/1/000140516.pdf3280d641c2b314a7cc5342cc77fb9ba1MD51TEXT000140516.pdf.txt000140516.pdf.txtExtracted Texttext/plain20990http://www.lume.ufrgs.br/bitstream/10183/88638/2/000140516.pdf.txtfe18f2396411b1893796d9e37a012d74MD52THUMBNAIL000140516.pdf.jpg000140516.pdf.jpgGenerated Thumbnailimage/jpeg1643http://www.lume.ufrgs.br/bitstream/10183/88638/3/000140516.pdf.jpg02c59218837f3550a9ee6d87943a4d29MD5310183/886382022-02-22 04:45:38.811366oai:www.lume.ufrgs.br:10183/88638Repositório de PublicaçõesPUBhttps://lume.ufrgs.br/oai/requestopendoar:2022-02-22T07:45:38Repositório Institucional da UFRGS - Universidade Federal do Rio Grande do Sul (UFRGS)false |
dc.title.pt_BR.fl_str_mv |
Nitrogen implantation into amorphous carbon films: sims and positron annihilation analyses |
title |
Nitrogen implantation into amorphous carbon films: sims and positron annihilation analyses |
spellingShingle |
Nitrogen implantation into amorphous carbon films: sims and positron annihilation analyses Freire Junior, Fernando Leite Física da matéria condensada Filmes finos Implantação de íons |
title_short |
Nitrogen implantation into amorphous carbon films: sims and positron annihilation analyses |
title_full |
Nitrogen implantation into amorphous carbon films: sims and positron annihilation analyses |
title_fullStr |
Nitrogen implantation into amorphous carbon films: sims and positron annihilation analyses |
title_full_unstemmed |
Nitrogen implantation into amorphous carbon films: sims and positron annihilation analyses |
title_sort |
Nitrogen implantation into amorphous carbon films: sims and positron annihilation analyses |
author |
Freire Junior, Fernando Leite |
author_facet |
Freire Junior, Fernando Leite Franceschini, Dante F. Achete, Carlos A. Baumvol, Israel Jacob Rabin Brusa, R.S. Mariotto, Gino Canteri, R. |
author_role |
author |
author2 |
Franceschini, Dante F. Achete, Carlos A. Baumvol, Israel Jacob Rabin Brusa, R.S. Mariotto, Gino Canteri, R. |
author2_role |
author author author author author author |
dc.contributor.author.fl_str_mv |
Freire Junior, Fernando Leite Franceschini, Dante F. Achete, Carlos A. Baumvol, Israel Jacob Rabin Brusa, R.S. Mariotto, Gino Canteri, R. |
dc.subject.por.fl_str_mv |
Física da matéria condensada Filmes finos Implantação de íons |
topic |
Física da matéria condensada Filmes finos Implantação de íons |
description |
Hard amorphous hydrogenated carbon films deposited by self-bias glow discharge were implanted at room temperature with 70 keV-nitrogen ions at fluences between 2.0 and 9.0 x 10 16 N/cm2. The implantation energy was chosen so that the projected range plus range straggling (Rp+∆Rp) was smaller than the film thickness. The implanted samples were analyzed by Raman scattering, Secondary ion mass spectrometry (SIMS) and positron annihilation spectroscopy, using the Doppler broadening technique with the determination of the shape parameter (S parameter). Depth profiles of implanted species agree well with the predictions of the Monte Carlo code, Transport of Ions in Matter (TRIM-90). For samples implanted with 2 x 1016 N/cm2 the S parameter follows the vacancies depth profile predicted by the simulation. For higher fluences we observed a reduction in the measured value of S. The first result was interpreted as being due to the point defects generated during the ion stopping, whereas the PAS results for higher fluences were due to the structural modifications (increase of disorder and of the number, or size, of the graphitic domains) induced in the carbon films by the incident ions combined with the point defects generated by the atomic collisions. |
publishDate |
1996 |
dc.date.issued.fl_str_mv |
1996 |
dc.date.accessioned.fl_str_mv |
2014-03-20T01:48:21Z |
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dc.relation.ispartof.pt_BR.fl_str_mv |
Brazilian Journal of Physics. São Paulo. Vol. 26, no. 1 (Mar. 1996), p. 353-358 |
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