Mechanical strain and damage in Si implanted with O and N ions at elevated temperatures : evidence of ion beam induced annealing
Autor(a) principal: | |
---|---|
Data de Publicação: | 2001 |
Outros Autores: | , , |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Repositório Institucional da UFRGS |
Texto Completo: | http://hdl.handle.net/10183/95809 |
Resumo: | The accumulation of damage and the development of mechanical strain in crystalline Si (c-Si) by O and N ion implantation to doses up to 431017 cm-² at elevated temperatures have been studied using Rutherford backscattering spectrometry and high resolution x-ray diffraction. The implantation of O or N ions at high temperatures produces two distinct layers in the implanted c-Si: (i) a practically damage-free layer extending from the surface up to ~- half of the depth of the mean projected range (Rp) and presenting negative strain (of contraction); and (ii) a heavily damaged layer located around and ahead of the Rp with no significant strain. Both the damage distribution and the magnitude of the strain were found to be dependent on the ion species implanted. We proposed that besides the spatial separation of Frenkel pair defects due to the mechanics of the collision processes and the intensive dynamic annealing, an ion beam induced annealing process also participate in the formation of the near-surface damage-free layer during high temperature implantation of c-Si. |
id |
UFRGS-2_879e47ce06416d6bde088db0af667d1a |
---|---|
oai_identifier_str |
oai:www.lume.ufrgs.br:10183/95809 |
network_acronym_str |
UFRGS-2 |
network_name_str |
Repositório Institucional da UFRGS |
repository_id_str |
|
spelling |
Souza, Joel Pereira deSuprun-Belevich, Yu.Boudinov, Henri IvanovCima, Carlos Alberto2014-05-31T02:06:37Z20010021-8979http://hdl.handle.net/10183/95809000281912The accumulation of damage and the development of mechanical strain in crystalline Si (c-Si) by O and N ion implantation to doses up to 431017 cm-² at elevated temperatures have been studied using Rutherford backscattering spectrometry and high resolution x-ray diffraction. The implantation of O or N ions at high temperatures produces two distinct layers in the implanted c-Si: (i) a practically damage-free layer extending from the surface up to ~- half of the depth of the mean projected range (Rp) and presenting negative strain (of contraction); and (ii) a heavily damaged layer located around and ahead of the Rp with no significant strain. Both the damage distribution and the magnitude of the strain were found to be dependent on the ion species implanted. We proposed that besides the spatial separation of Frenkel pair defects due to the mechanics of the collision processes and the intensive dynamic annealing, an ion beam induced annealing process also participate in the formation of the near-surface damage-free layer during high temperature implantation of c-Si.application/pdfengJournal of applied physics. Melville. Vol. 89, no. 1 (Jan. 2001), p. 42-46RecozimentoSemicondutores elementaresDefeitos de FrenkelTensões internasDifração de raios XSilícioImplantacao ionicaNitrogênioOxigênioRetroespalhamento rutherfordDopagem de semicondutoresMechanical strain and damage in Si implanted with O and N ions at elevated temperatures : evidence of ion beam induced annealingEstrangeiroinfo:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/openAccessreponame:Repositório Institucional da UFRGSinstname:Universidade Federal do Rio Grande do Sul (UFRGS)instacron:UFRGSORIGINAL000281912.pdf000281912.pdfTexto completo (inglês)application/pdf239898http://www.lume.ufrgs.br/bitstream/10183/95809/1/000281912.pdfd19da5a80e1f444c5f170230aaae1d09MD51TEXT000281912.pdf.txt000281912.pdf.txtExtracted Texttext/plain25502http://www.lume.ufrgs.br/bitstream/10183/95809/2/000281912.pdf.txt27c52fd91acbe2f6fc2182c0704c5adfMD52THUMBNAIL000281912.pdf.jpg000281912.pdf.jpgGenerated Thumbnailimage/jpeg1594http://www.lume.ufrgs.br/bitstream/10183/95809/3/000281912.pdf.jpg17788d49d35789962138d8c19133fd80MD5310183/958092022-02-22 05:03:48.802374oai:www.lume.ufrgs.br:10183/95809Repositório de PublicaçõesPUBhttps://lume.ufrgs.br/oai/requestopendoar:2022-02-22T08:03:48Repositório Institucional da UFRGS - Universidade Federal do Rio Grande do Sul (UFRGS)false |
dc.title.pt_BR.fl_str_mv |
Mechanical strain and damage in Si implanted with O and N ions at elevated temperatures : evidence of ion beam induced annealing |
title |
Mechanical strain and damage in Si implanted with O and N ions at elevated temperatures : evidence of ion beam induced annealing |
spellingShingle |
Mechanical strain and damage in Si implanted with O and N ions at elevated temperatures : evidence of ion beam induced annealing Souza, Joel Pereira de Recozimento Semicondutores elementares Defeitos de Frenkel Tensões internas Difração de raios X Silício Implantacao ionica Nitrogênio Oxigênio Retroespalhamento rutherford Dopagem de semicondutores |
title_short |
Mechanical strain and damage in Si implanted with O and N ions at elevated temperatures : evidence of ion beam induced annealing |
title_full |
Mechanical strain and damage in Si implanted with O and N ions at elevated temperatures : evidence of ion beam induced annealing |
title_fullStr |
Mechanical strain and damage in Si implanted with O and N ions at elevated temperatures : evidence of ion beam induced annealing |
title_full_unstemmed |
Mechanical strain and damage in Si implanted with O and N ions at elevated temperatures : evidence of ion beam induced annealing |
title_sort |
Mechanical strain and damage in Si implanted with O and N ions at elevated temperatures : evidence of ion beam induced annealing |
author |
Souza, Joel Pereira de |
author_facet |
Souza, Joel Pereira de Suprun-Belevich, Yu. Boudinov, Henri Ivanov Cima, Carlos Alberto |
author_role |
author |
author2 |
Suprun-Belevich, Yu. Boudinov, Henri Ivanov Cima, Carlos Alberto |
author2_role |
author author author |
dc.contributor.author.fl_str_mv |
Souza, Joel Pereira de Suprun-Belevich, Yu. Boudinov, Henri Ivanov Cima, Carlos Alberto |
dc.subject.por.fl_str_mv |
Recozimento Semicondutores elementares Defeitos de Frenkel Tensões internas Difração de raios X Silício Implantacao ionica Nitrogênio Oxigênio Retroespalhamento rutherford Dopagem de semicondutores |
topic |
Recozimento Semicondutores elementares Defeitos de Frenkel Tensões internas Difração de raios X Silício Implantacao ionica Nitrogênio Oxigênio Retroespalhamento rutherford Dopagem de semicondutores |
description |
The accumulation of damage and the development of mechanical strain in crystalline Si (c-Si) by O and N ion implantation to doses up to 431017 cm-² at elevated temperatures have been studied using Rutherford backscattering spectrometry and high resolution x-ray diffraction. The implantation of O or N ions at high temperatures produces two distinct layers in the implanted c-Si: (i) a practically damage-free layer extending from the surface up to ~- half of the depth of the mean projected range (Rp) and presenting negative strain (of contraction); and (ii) a heavily damaged layer located around and ahead of the Rp with no significant strain. Both the damage distribution and the magnitude of the strain were found to be dependent on the ion species implanted. We proposed that besides the spatial separation of Frenkel pair defects due to the mechanics of the collision processes and the intensive dynamic annealing, an ion beam induced annealing process also participate in the formation of the near-surface damage-free layer during high temperature implantation of c-Si. |
publishDate |
2001 |
dc.date.issued.fl_str_mv |
2001 |
dc.date.accessioned.fl_str_mv |
2014-05-31T02:06:37Z |
dc.type.driver.fl_str_mv |
Estrangeiro info:eu-repo/semantics/article |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
format |
article |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://hdl.handle.net/10183/95809 |
dc.identifier.issn.pt_BR.fl_str_mv |
0021-8979 |
dc.identifier.nrb.pt_BR.fl_str_mv |
000281912 |
identifier_str_mv |
0021-8979 000281912 |
url |
http://hdl.handle.net/10183/95809 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.ispartof.pt_BR.fl_str_mv |
Journal of applied physics. Melville. Vol. 89, no. 1 (Jan. 2001), p. 42-46 |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
application/pdf |
dc.source.none.fl_str_mv |
reponame:Repositório Institucional da UFRGS instname:Universidade Federal do Rio Grande do Sul (UFRGS) instacron:UFRGS |
instname_str |
Universidade Federal do Rio Grande do Sul (UFRGS) |
instacron_str |
UFRGS |
institution |
UFRGS |
reponame_str |
Repositório Institucional da UFRGS |
collection |
Repositório Institucional da UFRGS |
bitstream.url.fl_str_mv |
http://www.lume.ufrgs.br/bitstream/10183/95809/1/000281912.pdf http://www.lume.ufrgs.br/bitstream/10183/95809/2/000281912.pdf.txt http://www.lume.ufrgs.br/bitstream/10183/95809/3/000281912.pdf.jpg |
bitstream.checksum.fl_str_mv |
d19da5a80e1f444c5f170230aaae1d09 27c52fd91acbe2f6fc2182c0704c5adf 17788d49d35789962138d8c19133fd80 |
bitstream.checksumAlgorithm.fl_str_mv |
MD5 MD5 MD5 |
repository.name.fl_str_mv |
Repositório Institucional da UFRGS - Universidade Federal do Rio Grande do Sul (UFRGS) |
repository.mail.fl_str_mv |
|
_version_ |
1801224835239510016 |