Oxygen reaction-diffusion in metalorganic chemical vapor deposition HfO/sub 2/ films annealed in O/sub 2/

Detalhes bibliográficos
Autor(a) principal: Bastos, Karen Paz
Data de Publicação: 2002
Outros Autores: Morais, Jonder, Miotti, Leonardo, Pezzi, Rafael Peretti, Soares, Gabriel Vieira, Baumvol, Israel Jacob Rabin, Hegde, R.I., Tseng, Hsing-Huang, Tobin, Phil J.
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Institucional da UFRGS
Texto Completo: http://hdl.handle.net/10183/141221
Resumo: Composition, atomic transport, and chemical reaction were investigated following annealing in O2 of ultrathin HfO2 films deposited on Si substrates thermally nitrided in NO. The as-prepared thin film composition was established by Rutherford backscattering spectrometry, nuclear reaction analysis, and x-ray photoelectron spectroscopy as a HfO2 film on an intermediate layer containing silicon oxynitride, hafnium silicate, and possibly hafnium–silicon oxynitride. O penetration, incorporation in the bulk of the HfO2 /SiOxNy structure, and oxidation of the substrate forming SiO2 were observed.
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spelling Bastos, Karen PazMorais, JonderMiotti, LeonardoPezzi, Rafael PerettiSoares, Gabriel VieiraBaumvol, Israel Jacob RabinHegde, R.I.Tseng, Hsing-HuangTobin, Phil J.2016-05-17T02:07:28Z20020003-6951http://hdl.handle.net/10183/141221000329971Composition, atomic transport, and chemical reaction were investigated following annealing in O2 of ultrathin HfO2 films deposited on Si substrates thermally nitrided in NO. The as-prepared thin film composition was established by Rutherford backscattering spectrometry, nuclear reaction analysis, and x-ray photoelectron spectroscopy as a HfO2 film on an intermediate layer containing silicon oxynitride, hafnium silicate, and possibly hafnium–silicon oxynitride. O penetration, incorporation in the bulk of the HfO2 /SiOxNy structure, and oxidation of the substrate forming SiO2 were observed.application/pdfengApplied physics letters. Melville. Vol. 81, no. 9 (Aug. 2002), p. 1669-1671RecozimentoCompostos de háfnioFilmes finos isolantesDeposição por MOCVDAnálise química nuclearOxidaçãoSistemas de difusão-reaçãoRetroespalhamento rutherfordEspectro de fotoeletrons produzidos por raios-xOxygen reaction-diffusion in metalorganic chemical vapor deposition HfO/sub 2/ films annealed in O/sub 2/Estrangeiroinfo:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/openAccessreponame:Repositório Institucional da UFRGSinstname:Universidade Federal do Rio Grande do Sul (UFRGS)instacron:UFRGSORIGINAL000329971.pdf000329971.pdfTexto completo (inglês)application/pdf408894http://www.lume.ufrgs.br/bitstream/10183/141221/1/000329971.pdf99e9210a40121fc1eb2c097ddf3e6dfeMD51TEXT000329971.pdf.txt000329971.pdf.txtExtracted Texttext/plain17337http://www.lume.ufrgs.br/bitstream/10183/141221/2/000329971.pdf.txt62e0719192129c5029d3349ef5571be5MD52THUMBNAIL000329971.pdf.jpg000329971.pdf.jpgGenerated Thumbnailimage/jpeg2183http://www.lume.ufrgs.br/bitstream/10183/141221/3/000329971.pdf.jpg4ee749ae30fa437fc743c6c8830c6276MD5310183/1412212023-07-20 03:34:58.445048oai:www.lume.ufrgs.br:10183/141221Repositório de PublicaçõesPUBhttps://lume.ufrgs.br/oai/requestopendoar:2023-07-20T06:34:58Repositório Institucional da UFRGS - Universidade Federal do Rio Grande do Sul (UFRGS)false
dc.title.pt_BR.fl_str_mv Oxygen reaction-diffusion in metalorganic chemical vapor deposition HfO/sub 2/ films annealed in O/sub 2/
title Oxygen reaction-diffusion in metalorganic chemical vapor deposition HfO/sub 2/ films annealed in O/sub 2/
spellingShingle Oxygen reaction-diffusion in metalorganic chemical vapor deposition HfO/sub 2/ films annealed in O/sub 2/
Bastos, Karen Paz
Recozimento
Compostos de háfnio
Filmes finos isolantes
Deposição por MOCVD
Análise química nuclear
Oxidação
Sistemas de difusão-reação
Retroespalhamento rutherford
Espectro de fotoeletrons produzidos por raios-x
title_short Oxygen reaction-diffusion in metalorganic chemical vapor deposition HfO/sub 2/ films annealed in O/sub 2/
title_full Oxygen reaction-diffusion in metalorganic chemical vapor deposition HfO/sub 2/ films annealed in O/sub 2/
title_fullStr Oxygen reaction-diffusion in metalorganic chemical vapor deposition HfO/sub 2/ films annealed in O/sub 2/
title_full_unstemmed Oxygen reaction-diffusion in metalorganic chemical vapor deposition HfO/sub 2/ films annealed in O/sub 2/
title_sort Oxygen reaction-diffusion in metalorganic chemical vapor deposition HfO/sub 2/ films annealed in O/sub 2/
author Bastos, Karen Paz
author_facet Bastos, Karen Paz
Morais, Jonder
Miotti, Leonardo
Pezzi, Rafael Peretti
Soares, Gabriel Vieira
Baumvol, Israel Jacob Rabin
Hegde, R.I.
Tseng, Hsing-Huang
Tobin, Phil J.
author_role author
author2 Morais, Jonder
Miotti, Leonardo
Pezzi, Rafael Peretti
Soares, Gabriel Vieira
Baumvol, Israel Jacob Rabin
Hegde, R.I.
Tseng, Hsing-Huang
Tobin, Phil J.
author2_role author
author
author
author
author
author
author
author
dc.contributor.author.fl_str_mv Bastos, Karen Paz
Morais, Jonder
Miotti, Leonardo
Pezzi, Rafael Peretti
Soares, Gabriel Vieira
Baumvol, Israel Jacob Rabin
Hegde, R.I.
Tseng, Hsing-Huang
Tobin, Phil J.
dc.subject.por.fl_str_mv Recozimento
Compostos de háfnio
Filmes finos isolantes
Deposição por MOCVD
Análise química nuclear
Oxidação
Sistemas de difusão-reação
Retroespalhamento rutherford
Espectro de fotoeletrons produzidos por raios-x
topic Recozimento
Compostos de háfnio
Filmes finos isolantes
Deposição por MOCVD
Análise química nuclear
Oxidação
Sistemas de difusão-reação
Retroespalhamento rutherford
Espectro de fotoeletrons produzidos por raios-x
description Composition, atomic transport, and chemical reaction were investigated following annealing in O2 of ultrathin HfO2 films deposited on Si substrates thermally nitrided in NO. The as-prepared thin film composition was established by Rutherford backscattering spectrometry, nuclear reaction analysis, and x-ray photoelectron spectroscopy as a HfO2 film on an intermediate layer containing silicon oxynitride, hafnium silicate, and possibly hafnium–silicon oxynitride. O penetration, incorporation in the bulk of the HfO2 /SiOxNy structure, and oxidation of the substrate forming SiO2 were observed.
publishDate 2002
dc.date.issued.fl_str_mv 2002
dc.date.accessioned.fl_str_mv 2016-05-17T02:07:28Z
dc.type.driver.fl_str_mv Estrangeiro
info:eu-repo/semantics/article
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://hdl.handle.net/10183/141221
dc.identifier.issn.pt_BR.fl_str_mv 0003-6951
dc.identifier.nrb.pt_BR.fl_str_mv 000329971
identifier_str_mv 0003-6951
000329971
url http://hdl.handle.net/10183/141221
dc.language.iso.fl_str_mv eng
language eng
dc.relation.ispartof.pt_BR.fl_str_mv Applied physics letters. Melville. Vol. 81, no. 9 (Aug. 2002), p. 1669-1671
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