Stability of zirconium silicate films on Si under vacuum and O/sub 2/ annealing

• Autor(a) principal: Morais, Jonder
• Data de Publicação: 2001
• Outros Autores: Rosa, Elisa Brod Oliveira da, Miotti, Leonardo, Pezzi, Rafael Peretti, Baumvol, Israel Jacob Rabin, Rotondaro, Antonio L.P., Bevan, M.J., Colombo, Luigi
• Tipo de documento: Artigo
• Idioma: eng
• Título da fonte: Repositório Institucional da UFRGS
• Texto Completo: http://hdl.handle.net/10183/141120
• topic: Recozimento; Revestimento; Filmes finos isolantes; Estrutura interfacial; Análise química; Retroespalhamento rutherford; Composição superficial; Estabilidade térmica; Espectro de fotoeletrons produzidos por raios-x; Compostos de zirconio

The effect of postdeposition annealing in vacuum and in dry O2 on the atomic transport and chemical stability of chemical vapor deposited ZrSixOy films on Si is investigated. Rutherford backscattering spectrometry, narrow nuclear resonance profiling, and low energy ion scattering spectroscopy were used to obtain depth distributions of Si, O, and Zr in the films. The chemical environment of these elements in near-surface and near-interface regions was identified by angle-resolved x-ray photoelectron spectroscopy. It is shown that although the interface region is rather stable, the surface region presents an accumulation of Si after thermal annealing.