Copper gettering at half the projected ion range induced by low-energy channeling He implantation into silicon
Autor(a) principal: | |
---|---|
Data de Publicação: | 2000 |
Outros Autores: | , , , , |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Repositório Institucional da UFRGS |
Texto Completo: | http://hdl.handle.net/10183/141127 |
Resumo: | He1 ions were implanted at 40 keV into Si <100> channel direction at room temperature (RT) and at 350 °C. The Si samples were subsequently doped with Cu in order to study the gettering of Cu atoms at the defective layer. A subsequent annealing at 800 °C was performed in order to anneal the implantation damage and redistribute the Cu into the wafer. The samples were analyzed by Rutherford backscattering channeling and transmission electron microscopy techniques. The Cu distribution was measured by secondary ion mass spectrometry (SIMS). The SIMS experiments show that, while the 350 °C implant induces gettering at the He projected range (Rp) region, the same implant performed at RT has given as a result, gettering at both the Rp and Rp/2 depths. Hence, this work demonstrates that the Rp/2 effect can be induced by a light ion implanted at low energy into channeling direction. |
id |
UFRGS-2_a14361d08db075e995a29d15ba30f8c1 |
---|---|
oai_identifier_str |
oai:www.lume.ufrgs.br:10183/141127 |
network_acronym_str |
UFRGS-2 |
network_name_str |
Repositório Institucional da UFRGS |
repository_id_str |
|
spelling |
Fichtner, Paulo Fernando PapaleoBehar, MoniKaschny, Jorge Ricardo de AraujoPeeva, AnitaKoegler, ReinhardSkorupa, Wolfgang2016-05-14T02:08:22Z20000003-6951http://hdl.handle.net/10183/141127000275257He1 ions were implanted at 40 keV into Si <100> channel direction at room temperature (RT) and at 350 °C. The Si samples were subsequently doped with Cu in order to study the gettering of Cu atoms at the defective layer. A subsequent annealing at 800 °C was performed in order to anneal the implantation damage and redistribute the Cu into the wafer. The samples were analyzed by Rutherford backscattering channeling and transmission electron microscopy techniques. The Cu distribution was measured by secondary ion mass spectrometry (SIMS). The SIMS experiments show that, while the 350 °C implant induces gettering at the He projected range (Rp) region, the same implant performed at RT has given as a result, gettering at both the Rp and Rp/2 depths. Hence, this work demonstrates that the Rp/2 effect can be induced by a light ion implanted at low energy into channeling direction.application/pdfengApplied physics letters. Melville. Vol. 77, no. 7 (Aug. 2000), p. 972-974HélioCobreSilícioTunelamentoEspectroscopia de massa de ions secundariosImplantação de íonsPerda de energia de particulasRecozimentoSemicondutoresImpurezasRetroespalhamento rutherfordDopagem de semicondutoresMicroscopia eletrônica de transmissãoCopper gettering at half the projected ion range induced by low-energy channeling He implantation into siliconEstrangeiroinfo:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/openAccessreponame:Repositório Institucional da UFRGSinstname:Universidade Federal do Rio Grande do Sul (UFRGS)instacron:UFRGSORIGINAL000275257.pdf000275257.pdfTexto completo (inglês)application/pdf507531http://www.lume.ufrgs.br/bitstream/10183/141127/1/000275257.pdf7c77565f322c478e8f79b3b19b3de26bMD51TEXT000275257.pdf.txt000275257.pdf.txtExtracted Texttext/plain19104http://www.lume.ufrgs.br/bitstream/10183/141127/2/000275257.pdf.txt9c0c82e5b09761f3646da687739c021dMD52THUMBNAIL000275257.pdf.jpg000275257.pdf.jpgGenerated Thumbnailimage/jpeg2238http://www.lume.ufrgs.br/bitstream/10183/141127/3/000275257.pdf.jpgdbc9e64761fe0e0307693fe44ab75cb0MD5310183/1411272022-02-22 04:48:44.956631oai:www.lume.ufrgs.br:10183/141127Repositório de PublicaçõesPUBhttps://lume.ufrgs.br/oai/requestopendoar:2022-02-22T07:48:44Repositório Institucional da UFRGS - Universidade Federal do Rio Grande do Sul (UFRGS)false |
dc.title.pt_BR.fl_str_mv |
Copper gettering at half the projected ion range induced by low-energy channeling He implantation into silicon |
title |
Copper gettering at half the projected ion range induced by low-energy channeling He implantation into silicon |
spellingShingle |
Copper gettering at half the projected ion range induced by low-energy channeling He implantation into silicon Fichtner, Paulo Fernando Papaleo Hélio Cobre Silício Tunelamento Espectroscopia de massa de ions secundarios Implantação de íons Perda de energia de particulas Recozimento Semicondutores Impurezas Retroespalhamento rutherford Dopagem de semicondutores Microscopia eletrônica de transmissão |
title_short |
Copper gettering at half the projected ion range induced by low-energy channeling He implantation into silicon |
title_full |
Copper gettering at half the projected ion range induced by low-energy channeling He implantation into silicon |
title_fullStr |
Copper gettering at half the projected ion range induced by low-energy channeling He implantation into silicon |
title_full_unstemmed |
Copper gettering at half the projected ion range induced by low-energy channeling He implantation into silicon |
title_sort |
Copper gettering at half the projected ion range induced by low-energy channeling He implantation into silicon |
author |
Fichtner, Paulo Fernando Papaleo |
author_facet |
Fichtner, Paulo Fernando Papaleo Behar, Moni Kaschny, Jorge Ricardo de Araujo Peeva, Anita Koegler, Reinhard Skorupa, Wolfgang |
author_role |
author |
author2 |
Behar, Moni Kaschny, Jorge Ricardo de Araujo Peeva, Anita Koegler, Reinhard Skorupa, Wolfgang |
author2_role |
author author author author author |
dc.contributor.author.fl_str_mv |
Fichtner, Paulo Fernando Papaleo Behar, Moni Kaschny, Jorge Ricardo de Araujo Peeva, Anita Koegler, Reinhard Skorupa, Wolfgang |
dc.subject.por.fl_str_mv |
Hélio Cobre Silício Tunelamento Espectroscopia de massa de ions secundarios Implantação de íons Perda de energia de particulas Recozimento Semicondutores Impurezas Retroespalhamento rutherford Dopagem de semicondutores Microscopia eletrônica de transmissão |
topic |
Hélio Cobre Silício Tunelamento Espectroscopia de massa de ions secundarios Implantação de íons Perda de energia de particulas Recozimento Semicondutores Impurezas Retroespalhamento rutherford Dopagem de semicondutores Microscopia eletrônica de transmissão |
description |
He1 ions were implanted at 40 keV into Si <100> channel direction at room temperature (RT) and at 350 °C. The Si samples were subsequently doped with Cu in order to study the gettering of Cu atoms at the defective layer. A subsequent annealing at 800 °C was performed in order to anneal the implantation damage and redistribute the Cu into the wafer. The samples were analyzed by Rutherford backscattering channeling and transmission electron microscopy techniques. The Cu distribution was measured by secondary ion mass spectrometry (SIMS). The SIMS experiments show that, while the 350 °C implant induces gettering at the He projected range (Rp) region, the same implant performed at RT has given as a result, gettering at both the Rp and Rp/2 depths. Hence, this work demonstrates that the Rp/2 effect can be induced by a light ion implanted at low energy into channeling direction. |
publishDate |
2000 |
dc.date.issued.fl_str_mv |
2000 |
dc.date.accessioned.fl_str_mv |
2016-05-14T02:08:22Z |
dc.type.driver.fl_str_mv |
Estrangeiro info:eu-repo/semantics/article |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
format |
article |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://hdl.handle.net/10183/141127 |
dc.identifier.issn.pt_BR.fl_str_mv |
0003-6951 |
dc.identifier.nrb.pt_BR.fl_str_mv |
000275257 |
identifier_str_mv |
0003-6951 000275257 |
url |
http://hdl.handle.net/10183/141127 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.ispartof.pt_BR.fl_str_mv |
Applied physics letters. Melville. Vol. 77, no. 7 (Aug. 2000), p. 972-974 |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
application/pdf |
dc.source.none.fl_str_mv |
reponame:Repositório Institucional da UFRGS instname:Universidade Federal do Rio Grande do Sul (UFRGS) instacron:UFRGS |
instname_str |
Universidade Federal do Rio Grande do Sul (UFRGS) |
instacron_str |
UFRGS |
institution |
UFRGS |
reponame_str |
Repositório Institucional da UFRGS |
collection |
Repositório Institucional da UFRGS |
bitstream.url.fl_str_mv |
http://www.lume.ufrgs.br/bitstream/10183/141127/1/000275257.pdf http://www.lume.ufrgs.br/bitstream/10183/141127/2/000275257.pdf.txt http://www.lume.ufrgs.br/bitstream/10183/141127/3/000275257.pdf.jpg |
bitstream.checksum.fl_str_mv |
7c77565f322c478e8f79b3b19b3de26b 9c0c82e5b09761f3646da687739c021d dbc9e64761fe0e0307693fe44ab75cb0 |
bitstream.checksumAlgorithm.fl_str_mv |
MD5 MD5 MD5 |
repository.name.fl_str_mv |
Repositório Institucional da UFRGS - Universidade Federal do Rio Grande do Sul (UFRGS) |
repository.mail.fl_str_mv |
|
_version_ |
1801224900055138304 |