Impurity resistivity of the double-donor system Si:P,Bi

Detalhes bibliográficos
Autor(a) principal: Silva, Antonio Ferreira da
Data de Publicação: 1999
Outros Autores: Sernelius, Bo E., Souza, Joel Pereira de, Boudinov, Henri Ivanov, Zheng, Hairong, Sarachik, M.P.
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Institucional da UFRGS
Texto Completo: http://hdl.handle.net/10183/104254
Resumo: The electrical resistivity of the shallow double-donor system Si:P,Bi, prepared by ion implantation, was investigated in the temperature range from 1.7 to 300 K. Good agreement was obtained between the measured resistivities and resistivities calculated by a generalized Drude approach for the same temperatures and dopant concentrations. The critical impurity concentration for the metal-nonmetal transition for the double-doped Si:P,Bi system was found to lie between the critical concentrations of the two single-doped systems, Si:P and Si:Bi.
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spelling Silva, Antonio Ferreira daSernelius, Bo E.Souza, Joel Pereira deBoudinov, Henri IvanovZheng, HairongSarachik, M.P.2014-10-08T02:11:03Z19991098-0121http://hdl.handle.net/10183/104254000269719The electrical resistivity of the shallow double-donor system Si:P,Bi, prepared by ion implantation, was investigated in the temperature range from 1.7 to 300 K. Good agreement was obtained between the measured resistivities and resistivities calculated by a generalized Drude approach for the same temperatures and dopant concentrations. The critical impurity concentration for the metal-nonmetal transition for the double-doped Si:P,Bi system was found to lie between the critical concentrations of the two single-doped systems, Si:P and Si:Bi.application/pdfengPhysical review. B, Condensed matter and materials physics. Melville. Vol. 60, no. 23 (Dec. 1999), p. 15824-15828ImpurezasImplantação de íonsTemperaturaCondutividade elétricaDopagem de semicondutoresRetroespalhamento rutherfordSemicondutoresTransição metal isolanteBoroFósforoSilícioImpurity resistivity of the double-donor system Si:P,BiEstrangeiroinfo:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/openAccessreponame:Repositório Institucional da UFRGSinstname:Universidade Federal do Rio Grande do Sul (UFRGS)instacron:UFRGSORIGINAL000269719.pdf000269719.pdfTexto completo (inglês)application/pdf82335http://www.lume.ufrgs.br/bitstream/10183/104254/1/000269719.pdf48ff0e9bb317b0e2b61a159485911a65MD51TEXT000269719.pdf.txt000269719.pdf.txtExtracted Texttext/plain17536http://www.lume.ufrgs.br/bitstream/10183/104254/2/000269719.pdf.txt6237386141d36123fb768e400b7a1893MD52THUMBNAIL000269719.pdf.jpg000269719.pdf.jpgGenerated Thumbnailimage/jpeg1948http://www.lume.ufrgs.br/bitstream/10183/104254/3/000269719.pdf.jpg290f175f55fa2e76d9e3d8f2f768e4d5MD5310183/1042542022-02-22 05:16:11.730516oai:www.lume.ufrgs.br:10183/104254Repositório de PublicaçõesPUBhttps://lume.ufrgs.br/oai/requestopendoar:2022-02-22T08:16:11Repositório Institucional da UFRGS - Universidade Federal do Rio Grande do Sul (UFRGS)false
dc.title.pt_BR.fl_str_mv Impurity resistivity of the double-donor system Si:P,Bi
title Impurity resistivity of the double-donor system Si:P,Bi
spellingShingle Impurity resistivity of the double-donor system Si:P,Bi
Silva, Antonio Ferreira da
Impurezas
Implantação de íons
Temperatura
Condutividade elétrica
Dopagem de semicondutores
Retroespalhamento rutherford
Semicondutores
Transição metal isolante
Boro
Fósforo
Silício
title_short Impurity resistivity of the double-donor system Si:P,Bi
title_full Impurity resistivity of the double-donor system Si:P,Bi
title_fullStr Impurity resistivity of the double-donor system Si:P,Bi
title_full_unstemmed Impurity resistivity of the double-donor system Si:P,Bi
title_sort Impurity resistivity of the double-donor system Si:P,Bi
author Silva, Antonio Ferreira da
author_facet Silva, Antonio Ferreira da
Sernelius, Bo E.
Souza, Joel Pereira de
Boudinov, Henri Ivanov
Zheng, Hairong
Sarachik, M.P.
author_role author
author2 Sernelius, Bo E.
Souza, Joel Pereira de
Boudinov, Henri Ivanov
Zheng, Hairong
Sarachik, M.P.
author2_role author
author
author
author
author
dc.contributor.author.fl_str_mv Silva, Antonio Ferreira da
Sernelius, Bo E.
Souza, Joel Pereira de
Boudinov, Henri Ivanov
Zheng, Hairong
Sarachik, M.P.
dc.subject.por.fl_str_mv Impurezas
Implantação de íons
Temperatura
Condutividade elétrica
Dopagem de semicondutores
Retroespalhamento rutherford
Semicondutores
Transição metal isolante
Boro
Fósforo
Silício
topic Impurezas
Implantação de íons
Temperatura
Condutividade elétrica
Dopagem de semicondutores
Retroespalhamento rutherford
Semicondutores
Transição metal isolante
Boro
Fósforo
Silício
description The electrical resistivity of the shallow double-donor system Si:P,Bi, prepared by ion implantation, was investigated in the temperature range from 1.7 to 300 K. Good agreement was obtained between the measured resistivities and resistivities calculated by a generalized Drude approach for the same temperatures and dopant concentrations. The critical impurity concentration for the metal-nonmetal transition for the double-doped Si:P,Bi system was found to lie between the critical concentrations of the two single-doped systems, Si:P and Si:Bi.
publishDate 1999
dc.date.issued.fl_str_mv 1999
dc.date.accessioned.fl_str_mv 2014-10-08T02:11:03Z
dc.type.driver.fl_str_mv Estrangeiro
info:eu-repo/semantics/article
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
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status_str publishedVersion
dc.identifier.uri.fl_str_mv http://hdl.handle.net/10183/104254
dc.identifier.issn.pt_BR.fl_str_mv 1098-0121
dc.identifier.nrb.pt_BR.fl_str_mv 000269719
identifier_str_mv 1098-0121
000269719
url http://hdl.handle.net/10183/104254
dc.language.iso.fl_str_mv eng
language eng
dc.relation.ispartof.pt_BR.fl_str_mv Physical review. B, Condensed matter and materials physics. Melville. Vol. 60, no. 23 (Dec. 1999), p. 15824-15828
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