Electrical resistivity of bismuth implanted into silicon

Detalhes bibliográficos
Autor(a) principal: Silva, Antonio Ferreira da
Data de Publicação: 1996
Outros Autores: Sernelius, Bo E., Souza, Joel Pereira de, Boudinov, Henri Ivanov
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Institucional da UFRGS
Texto Completo: http://hdl.handle.net/10183/95365
Resumo: We investigate the electrical properties of Bi-doped Si samples, prepared by ion implantation, in a range of concentrations around and above the metal–nonmetal transition. Comparison between experimental and theoretical values of the resistivity brought out that in these samples a similar behavior is observed as for other n-doped Si, thus confirming the results obtained in the same range of impurity concentration, i.e., p(Sb)<P(p)<p(As)<p(Bi).
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spelling Silva, Antonio Ferreira daSernelius, Bo E.Souza, Joel Pereira deBoudinov, Henri Ivanov2014-05-17T02:07:06Z19960021-8979http://hdl.handle.net/10183/95365000140522We investigate the electrical properties of Bi-doped Si samples, prepared by ion implantation, in a range of concentrations around and above the metal–nonmetal transition. Comparison between experimental and theoretical values of the resistivity brought out that in these samples a similar behavior is observed as for other n-doped Si, thus confirming the results obtained in the same range of impurity concentration, i.e., p(Sb)<P(p)<p(As)<p(Bi).application/pdfengJournal of Applied Physics. Woodbury. Vol. 79, n. 7 (Apr. 1996), p. 3453-3455Física da matéria condensadaCondutividade elétricaImplantação de íonsImpurezasDopagem de semicondutoresElectrical resistivity of bismuth implanted into siliconEstrangeiroinfo:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/openAccessreponame:Repositório Institucional da UFRGSinstname:Universidade Federal do Rio Grande do Sul (UFRGS)instacron:UFRGSORIGINAL000140522.pdf000140522.pdfTexto completo (inglês)application/pdf232666http://www.lume.ufrgs.br/bitstream/10183/95365/1/000140522.pdf5e01c85d2e4caa307dbb69dab68d079aMD51TEXT000140522.pdf.txt000140522.pdf.txtExtracted Texttext/plain14740http://www.lume.ufrgs.br/bitstream/10183/95365/2/000140522.pdf.txtfdaac7211b7ce5baba6b006192b361a4MD52THUMBNAIL000140522.pdf.jpg000140522.pdf.jpgGenerated Thumbnailimage/jpeg1554http://www.lume.ufrgs.br/bitstream/10183/95365/3/000140522.pdf.jpgbd99e336c85f0daa211b8471be148b4cMD5310183/953652024-09-06 06:38:01.023126oai:www.lume.ufrgs.br:10183/95365Repositório de PublicaçõesPUBhttps://lume.ufrgs.br/oai/requestopendoar:2024-09-06T09:38:01Repositório Institucional da UFRGS - Universidade Federal do Rio Grande do Sul (UFRGS)false
dc.title.pt_BR.fl_str_mv Electrical resistivity of bismuth implanted into silicon
title Electrical resistivity of bismuth implanted into silicon
spellingShingle Electrical resistivity of bismuth implanted into silicon
Silva, Antonio Ferreira da
Física da matéria condensada
Condutividade elétrica
Implantação de íons
Impurezas
Dopagem de semicondutores
title_short Electrical resistivity of bismuth implanted into silicon
title_full Electrical resistivity of bismuth implanted into silicon
title_fullStr Electrical resistivity of bismuth implanted into silicon
title_full_unstemmed Electrical resistivity of bismuth implanted into silicon
title_sort Electrical resistivity of bismuth implanted into silicon
author Silva, Antonio Ferreira da
author_facet Silva, Antonio Ferreira da
Sernelius, Bo E.
Souza, Joel Pereira de
Boudinov, Henri Ivanov
author_role author
author2 Sernelius, Bo E.
Souza, Joel Pereira de
Boudinov, Henri Ivanov
author2_role author
author
author
dc.contributor.author.fl_str_mv Silva, Antonio Ferreira da
Sernelius, Bo E.
Souza, Joel Pereira de
Boudinov, Henri Ivanov
dc.subject.por.fl_str_mv Física da matéria condensada
Condutividade elétrica
Implantação de íons
Impurezas
Dopagem de semicondutores
topic Física da matéria condensada
Condutividade elétrica
Implantação de íons
Impurezas
Dopagem de semicondutores
description We investigate the electrical properties of Bi-doped Si samples, prepared by ion implantation, in a range of concentrations around and above the metal–nonmetal transition. Comparison between experimental and theoretical values of the resistivity brought out that in these samples a similar behavior is observed as for other n-doped Si, thus confirming the results obtained in the same range of impurity concentration, i.e., p(Sb)<P(p)<p(As)<p(Bi).
publishDate 1996
dc.date.issued.fl_str_mv 1996
dc.date.accessioned.fl_str_mv 2014-05-17T02:07:06Z
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dc.identifier.uri.fl_str_mv http://hdl.handle.net/10183/95365
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dc.language.iso.fl_str_mv eng
language eng
dc.relation.ispartof.pt_BR.fl_str_mv Journal of Applied Physics. Woodbury. Vol. 79, n. 7 (Apr. 1996), p. 3453-3455
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