The role played in the improvement of the SiO2/SiC interface by a thin SiO2 film thermally grown prior to oxide film deposition

Detalhes bibliográficos
Autor(a) principal: Pitthan Filho, Eduardo
Data de Publicação: 2013
Outros Autores: Palmieri, Rodrigo, Corrêa, Silma Alberton, Soares, Gabriel Vieira, Boudinov, Henri Ivanov, Stedile, Fernanda Chiarello
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Institucional da UFRGS
Texto Completo: http://hdl.handle.net/10183/97010
Resumo: To minimize electrical degradation from thermal oxidation of 4H-SiC, a thin and stoichiometric SiO2 film was thermally grown, monitored by X-ray photoelectron spectroscopy. To obtain thicker films, SiO2 was deposited by sputtering. Reduction in the flatband voltage was observed when compared to SiO2 films thermally grown or deposited directly on 4H-SiC. Post-deposition annealing in Ar reduced the flatband voltage of the samples but induced an electrical degradation in the SiO2/4H-SiC interface. Nuclear reaction analyzes proved that the thin film thermally grown was not stable during the annealing, exchanging O atoms with the deposited film and with the gaseous ambient.
id UFRGS-2_c5664e396c973b84b363078073e796c3
oai_identifier_str oai:www.lume.ufrgs.br:10183/97010
network_acronym_str UFRGS-2
network_name_str Repositório Institucional da UFRGS
repository_id_str
spelling Pitthan Filho, EduardoPalmieri, RodrigoCorrêa, Silma AlbertonSoares, Gabriel VieiraBoudinov, Henri IvanovStedile, Fernanda Chiarello2014-06-28T02:09:01Z20132162-8742http://hdl.handle.net/10183/97010000916321To minimize electrical degradation from thermal oxidation of 4H-SiC, a thin and stoichiometric SiO2 film was thermally grown, monitored by X-ray photoelectron spectroscopy. To obtain thicker films, SiO2 was deposited by sputtering. Reduction in the flatband voltage was observed when compared to SiO2 films thermally grown or deposited directly on 4H-SiC. Post-deposition annealing in Ar reduced the flatband voltage of the samples but induced an electrical degradation in the SiO2/4H-SiC interface. Nuclear reaction analyzes proved that the thin film thermally grown was not stable during the annealing, exchanging O atoms with the deposited film and with the gaseous ambient.application/pdfengECS Solid State Letters. New Jersey. Vol. 2, no. 1 (2013), p. P8-P10Deposicao de filmes finosOxidação térmicaEspectroscopia fotoeletrônica de raio-xCarbeto de silícioThe role played in the improvement of the SiO2/SiC interface by a thin SiO2 film thermally grown prior to oxide film depositionEstrangeiroinfo:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/openAccessreponame:Repositório Institucional da UFRGSinstname:Universidade Federal do Rio Grande do Sul (UFRGS)instacron:UFRGSORIGINAL000916321.pdf000916321.pdfTexto completo (inglês)application/pdf569544http://www.lume.ufrgs.br/bitstream/10183/97010/1/000916321.pdfef7a503370fc99ae5803407473f99bddMD51TEXT000916321.pdf.txt000916321.pdf.txtExtracted Texttext/plain15827http://www.lume.ufrgs.br/bitstream/10183/97010/2/000916321.pdf.txt9c570cb65a0a676726682416ea95b1f1MD52THUMBNAIL000916321.pdf.jpg000916321.pdf.jpgGenerated Thumbnailimage/jpeg2062http://www.lume.ufrgs.br/bitstream/10183/97010/3/000916321.pdf.jpg2b9f7c46c05fc08aedc3e15a00a7d715MD5310183/970102024-09-04 06:27:21.000079oai:www.lume.ufrgs.br:10183/97010Repositório de PublicaçõesPUBhttps://lume.ufrgs.br/oai/requestopendoar:2024-09-04T09:27:21Repositório Institucional da UFRGS - Universidade Federal do Rio Grande do Sul (UFRGS)false
dc.title.pt_BR.fl_str_mv The role played in the improvement of the SiO2/SiC interface by a thin SiO2 film thermally grown prior to oxide film deposition
title The role played in the improvement of the SiO2/SiC interface by a thin SiO2 film thermally grown prior to oxide film deposition
spellingShingle The role played in the improvement of the SiO2/SiC interface by a thin SiO2 film thermally grown prior to oxide film deposition
Pitthan Filho, Eduardo
Deposicao de filmes finos
Oxidação térmica
Espectroscopia fotoeletrônica de raio-x
Carbeto de silício
title_short The role played in the improvement of the SiO2/SiC interface by a thin SiO2 film thermally grown prior to oxide film deposition
title_full The role played in the improvement of the SiO2/SiC interface by a thin SiO2 film thermally grown prior to oxide film deposition
title_fullStr The role played in the improvement of the SiO2/SiC interface by a thin SiO2 film thermally grown prior to oxide film deposition
title_full_unstemmed The role played in the improvement of the SiO2/SiC interface by a thin SiO2 film thermally grown prior to oxide film deposition
title_sort The role played in the improvement of the SiO2/SiC interface by a thin SiO2 film thermally grown prior to oxide film deposition
author Pitthan Filho, Eduardo
author_facet Pitthan Filho, Eduardo
Palmieri, Rodrigo
Corrêa, Silma Alberton
Soares, Gabriel Vieira
Boudinov, Henri Ivanov
Stedile, Fernanda Chiarello
author_role author
author2 Palmieri, Rodrigo
Corrêa, Silma Alberton
Soares, Gabriel Vieira
Boudinov, Henri Ivanov
Stedile, Fernanda Chiarello
author2_role author
author
author
author
author
dc.contributor.author.fl_str_mv Pitthan Filho, Eduardo
Palmieri, Rodrigo
Corrêa, Silma Alberton
Soares, Gabriel Vieira
Boudinov, Henri Ivanov
Stedile, Fernanda Chiarello
dc.subject.por.fl_str_mv Deposicao de filmes finos
Oxidação térmica
Espectroscopia fotoeletrônica de raio-x
Carbeto de silício
topic Deposicao de filmes finos
Oxidação térmica
Espectroscopia fotoeletrônica de raio-x
Carbeto de silício
description To minimize electrical degradation from thermal oxidation of 4H-SiC, a thin and stoichiometric SiO2 film was thermally grown, monitored by X-ray photoelectron spectroscopy. To obtain thicker films, SiO2 was deposited by sputtering. Reduction in the flatband voltage was observed when compared to SiO2 films thermally grown or deposited directly on 4H-SiC. Post-deposition annealing in Ar reduced the flatband voltage of the samples but induced an electrical degradation in the SiO2/4H-SiC interface. Nuclear reaction analyzes proved that the thin film thermally grown was not stable during the annealing, exchanging O atoms with the deposited film and with the gaseous ambient.
publishDate 2013
dc.date.issued.fl_str_mv 2013
dc.date.accessioned.fl_str_mv 2014-06-28T02:09:01Z
dc.type.driver.fl_str_mv Estrangeiro
info:eu-repo/semantics/article
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://hdl.handle.net/10183/97010
dc.identifier.issn.pt_BR.fl_str_mv 2162-8742
dc.identifier.nrb.pt_BR.fl_str_mv 000916321
identifier_str_mv 2162-8742
000916321
url http://hdl.handle.net/10183/97010
dc.language.iso.fl_str_mv eng
language eng
dc.relation.ispartof.pt_BR.fl_str_mv ECS Solid State Letters. New Jersey. Vol. 2, no. 1 (2013), p. P8-P10
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.source.none.fl_str_mv reponame:Repositório Institucional da UFRGS
instname:Universidade Federal do Rio Grande do Sul (UFRGS)
instacron:UFRGS
instname_str Universidade Federal do Rio Grande do Sul (UFRGS)
instacron_str UFRGS
institution UFRGS
reponame_str Repositório Institucional da UFRGS
collection Repositório Institucional da UFRGS
bitstream.url.fl_str_mv http://www.lume.ufrgs.br/bitstream/10183/97010/1/000916321.pdf
http://www.lume.ufrgs.br/bitstream/10183/97010/2/000916321.pdf.txt
http://www.lume.ufrgs.br/bitstream/10183/97010/3/000916321.pdf.jpg
bitstream.checksum.fl_str_mv ef7a503370fc99ae5803407473f99bdd
9c570cb65a0a676726682416ea95b1f1
2b9f7c46c05fc08aedc3e15a00a7d715
bitstream.checksumAlgorithm.fl_str_mv MD5
MD5
MD5
repository.name.fl_str_mv Repositório Institucional da UFRGS - Universidade Federal do Rio Grande do Sul (UFRGS)
repository.mail.fl_str_mv
_version_ 1815447545649823744

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