The role played in the improvement of the SiO2/SiC interface by a thin SiO2 film thermally grown prior to oxide film deposition

Detalhes bibliográficos
Autor(a) principal: Pitthan Filho, Eduardo
Data de Publicação: 2013
Outros Autores: Palmieri, Rodrigo, Corrêa, Silma Alberton, Soares, Gabriel Vieira, Boudinov, Henri Ivanov, Stedile, Fernanda Chiarello
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Institucional da UFRGS
Texto Completo: http://hdl.handle.net/10183/97010
Resumo: To minimize electrical degradation from thermal oxidation of 4H-SiC, a thin and stoichiometric SiO2 film was thermally grown, monitored by X-ray photoelectron spectroscopy. To obtain thicker films, SiO2 was deposited by sputtering. Reduction in the flatband voltage was observed when compared to SiO2 films thermally grown or deposited directly on 4H-SiC. Post-deposition annealing in Ar reduced the flatband voltage of the samples but induced an electrical degradation in the SiO2/4H-SiC interface. Nuclear reaction analyzes proved that the thin film thermally grown was not stable during the annealing, exchanging O atoms with the deposited film and with the gaseous ambient.
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spelling Pitthan Filho, EduardoPalmieri, RodrigoCorrêa, Silma AlbertonSoares, Gabriel VieiraBoudinov, Henri IvanovStedile, Fernanda Chiarello2014-06-28T02:09:01Z20132162-8742http://hdl.handle.net/10183/97010000916321To minimize electrical degradation from thermal oxidation of 4H-SiC, a thin and stoichiometric SiO2 film was thermally grown, monitored by X-ray photoelectron spectroscopy. To obtain thicker films, SiO2 was deposited by sputtering. Reduction in the flatband voltage was observed when compared to SiO2 films thermally grown or deposited directly on 4H-SiC. Post-deposition annealing in Ar reduced the flatband voltage of the samples but induced an electrical degradation in the SiO2/4H-SiC interface. Nuclear reaction analyzes proved that the thin film thermally grown was not stable during the annealing, exchanging O atoms with the deposited film and with the gaseous ambient.application/pdfengECS Solid State Letters. New Jersey. Vol. 2, no. 1 (2013), p. P8-P10Deposicao de filmes finosOxidação térmicaEspectroscopia fotoeletrônica de raio-xCarbeto de silícioThe role played in the improvement of the SiO2/SiC interface by a thin SiO2 film thermally grown prior to oxide film depositionEstrangeiroinfo:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/openAccessreponame:Repositório Institucional da UFRGSinstname:Universidade Federal do Rio Grande do Sul (UFRGS)instacron:UFRGSORIGINAL000916321.pdf000916321.pdfTexto completo (inglês)application/pdf569544http://www.lume.ufrgs.br/bitstream/10183/97010/1/000916321.pdfef7a503370fc99ae5803407473f99bddMD51TEXT000916321.pdf.txt000916321.pdf.txtExtracted Texttext/plain15827http://www.lume.ufrgs.br/bitstream/10183/97010/2/000916321.pdf.txt9c570cb65a0a676726682416ea95b1f1MD52THUMBNAIL000916321.pdf.jpg000916321.pdf.jpgGenerated Thumbnailimage/jpeg2062http://www.lume.ufrgs.br/bitstream/10183/97010/3/000916321.pdf.jpg2b9f7c46c05fc08aedc3e15a00a7d715MD5310183/970102018-10-18 08:46:37.552oai:www.lume.ufrgs.br:10183/97010Repositório de PublicaçõesPUBhttps://lume.ufrgs.br/oai/requestopendoar:2018-10-18T11:46:37Repositório Institucional da UFRGS - Universidade Federal do Rio Grande do Sul (UFRGS)false
dc.title.pt_BR.fl_str_mv The role played in the improvement of the SiO2/SiC interface by a thin SiO2 film thermally grown prior to oxide film deposition
title The role played in the improvement of the SiO2/SiC interface by a thin SiO2 film thermally grown prior to oxide film deposition
spellingShingle The role played in the improvement of the SiO2/SiC interface by a thin SiO2 film thermally grown prior to oxide film deposition
Pitthan Filho, Eduardo
Deposicao de filmes finos
Oxidação térmica
Espectroscopia fotoeletrônica de raio-x
Carbeto de silício
title_short The role played in the improvement of the SiO2/SiC interface by a thin SiO2 film thermally grown prior to oxide film deposition
title_full The role played in the improvement of the SiO2/SiC interface by a thin SiO2 film thermally grown prior to oxide film deposition
title_fullStr The role played in the improvement of the SiO2/SiC interface by a thin SiO2 film thermally grown prior to oxide film deposition
title_full_unstemmed The role played in the improvement of the SiO2/SiC interface by a thin SiO2 film thermally grown prior to oxide film deposition
title_sort The role played in the improvement of the SiO2/SiC interface by a thin SiO2 film thermally grown prior to oxide film deposition
author Pitthan Filho, Eduardo
author_facet Pitthan Filho, Eduardo
Palmieri, Rodrigo
Corrêa, Silma Alberton
Soares, Gabriel Vieira
Boudinov, Henri Ivanov
Stedile, Fernanda Chiarello
author_role author
author2 Palmieri, Rodrigo
Corrêa, Silma Alberton
Soares, Gabriel Vieira
Boudinov, Henri Ivanov
Stedile, Fernanda Chiarello
author2_role author
author
author
author
author
dc.contributor.author.fl_str_mv Pitthan Filho, Eduardo
Palmieri, Rodrigo
Corrêa, Silma Alberton
Soares, Gabriel Vieira
Boudinov, Henri Ivanov
Stedile, Fernanda Chiarello
dc.subject.por.fl_str_mv Deposicao de filmes finos
Oxidação térmica
Espectroscopia fotoeletrônica de raio-x
Carbeto de silício
topic Deposicao de filmes finos
Oxidação térmica
Espectroscopia fotoeletrônica de raio-x
Carbeto de silício
description To minimize electrical degradation from thermal oxidation of 4H-SiC, a thin and stoichiometric SiO2 film was thermally grown, monitored by X-ray photoelectron spectroscopy. To obtain thicker films, SiO2 was deposited by sputtering. Reduction in the flatband voltage was observed when compared to SiO2 films thermally grown or deposited directly on 4H-SiC. Post-deposition annealing in Ar reduced the flatband voltage of the samples but induced an electrical degradation in the SiO2/4H-SiC interface. Nuclear reaction analyzes proved that the thin film thermally grown was not stable during the annealing, exchanging O atoms with the deposited film and with the gaseous ambient.
publishDate 2013
dc.date.issued.fl_str_mv 2013
dc.date.accessioned.fl_str_mv 2014-06-28T02:09:01Z
dc.type.driver.fl_str_mv Estrangeiro
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dc.identifier.uri.fl_str_mv http://hdl.handle.net/10183/97010
dc.identifier.issn.pt_BR.fl_str_mv 2162-8742
dc.identifier.nrb.pt_BR.fl_str_mv 000916321
identifier_str_mv 2162-8742
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dc.language.iso.fl_str_mv eng
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dc.relation.ispartof.pt_BR.fl_str_mv ECS Solid State Letters. New Jersey. Vol. 2, no. 1 (2013), p. P8-P10
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