Range measurements and thermal stability study of az111 photoresist implanted with bi ions
Autor(a) principal: | |
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Data de Publicação: | 1988 |
Outros Autores: | , , , |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Repositório Institucional da UFRGS |
Texto Completo: | http://hdl.handle.net/10183/95118 |
Resumo: | The Rutherford backscattering technique has been used to determine the range parameters of Bi ions implanted into AZ111 photoresist film at energies from 10 to 400 keY. An overaU good agreement is found between the experimental results and the theoretical predictions by Biersack, Ziegler, and Littmark. It is also observed that a variation in the implantation dose does not affect the projected range and range straggling results, despite the fact that chemical modification of the implanted polymer layer is detected. In addition, we find that a shallow implantation of the polymer film with Hi ions increases the temperature at which the photoresist starts to decompose. Finally, at 300°C the implanted Bi atoms diffuse preferentially toward the bulk. For this temperature, two different diffusion coefficients are estimated, one for the damaged region Dd = 1.2 X 10-5 cm²/s and another for the bulk Db = 1.2x 10 -14 cm²/s. |
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Guimaraes, Renato BastosAmaral, LivioBehar, MoniZawislak, Fernando ClaudioFink, Dietmar2014-05-13T02:03:40Z19880021-8979http://hdl.handle.net/10183/95118000014862The Rutherford backscattering technique has been used to determine the range parameters of Bi ions implanted into AZ111 photoresist film at energies from 10 to 400 keY. An overaU good agreement is found between the experimental results and the theoretical predictions by Biersack, Ziegler, and Littmark. It is also observed that a variation in the implantation dose does not affect the projected range and range straggling results, despite the fact that chemical modification of the implanted polymer layer is detected. In addition, we find that a shallow implantation of the polymer film with Hi ions increases the temperature at which the photoresist starts to decompose. Finally, at 300°C the implanted Bi atoms diffuse preferentially toward the bulk. For this temperature, two different diffusion coefficients are estimated, one for the damaged region Dd = 1.2 X 10-5 cm²/s and another for the bulk Db = 1.2x 10 -14 cm²/s.application/pdfengJournal of applied physics. Woodbury. Vol. 63, no. 8, pt. 1 (Apr. 1988), p. 2502-2506Implantação de íonsRange measurements and thermal stability study of az111 photoresist implanted with bi ionsEstrangeiroinfo:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/openAccessreponame:Repositório Institucional da UFRGSinstname:Universidade Federal do Rio Grande do Sul (UFRGS)instacron:UFRGSORIGINAL000014862.pdf000014862.pdfTexto completo (inglês)application/pdf761555http://www.lume.ufrgs.br/bitstream/10183/95118/1/000014862.pdfc6322772f55346dde3c1c22f5d88c027MD51TEXT000014862.pdf.txt000014862.pdf.txtExtracted Texttext/plain24935http://www.lume.ufrgs.br/bitstream/10183/95118/2/000014862.pdf.txt15ba9594c1356cee623e37497848f272MD52THUMBNAIL000014862.pdf.jpg000014862.pdf.jpgGenerated Thumbnailimage/jpeg1589http://www.lume.ufrgs.br/bitstream/10183/95118/3/000014862.pdf.jpg60f079bef5c88caccf040ff05a045a76MD5310183/951182022-02-22 04:56:29.257716oai:www.lume.ufrgs.br:10183/95118Repositório de PublicaçõesPUBhttps://lume.ufrgs.br/oai/requestopendoar:2022-02-22T07:56:29Repositório Institucional da UFRGS - Universidade Federal do Rio Grande do Sul (UFRGS)false |
dc.title.pt_BR.fl_str_mv |
Range measurements and thermal stability study of az111 photoresist implanted with bi ions |
title |
Range measurements and thermal stability study of az111 photoresist implanted with bi ions |
spellingShingle |
Range measurements and thermal stability study of az111 photoresist implanted with bi ions Guimaraes, Renato Bastos Implantação de íons |
title_short |
Range measurements and thermal stability study of az111 photoresist implanted with bi ions |
title_full |
Range measurements and thermal stability study of az111 photoresist implanted with bi ions |
title_fullStr |
Range measurements and thermal stability study of az111 photoresist implanted with bi ions |
title_full_unstemmed |
Range measurements and thermal stability study of az111 photoresist implanted with bi ions |
title_sort |
Range measurements and thermal stability study of az111 photoresist implanted with bi ions |
author |
Guimaraes, Renato Bastos |
author_facet |
Guimaraes, Renato Bastos Amaral, Livio Behar, Moni Zawislak, Fernando Claudio Fink, Dietmar |
author_role |
author |
author2 |
Amaral, Livio Behar, Moni Zawislak, Fernando Claudio Fink, Dietmar |
author2_role |
author author author author |
dc.contributor.author.fl_str_mv |
Guimaraes, Renato Bastos Amaral, Livio Behar, Moni Zawislak, Fernando Claudio Fink, Dietmar |
dc.subject.por.fl_str_mv |
Implantação de íons |
topic |
Implantação de íons |
description |
The Rutherford backscattering technique has been used to determine the range parameters of Bi ions implanted into AZ111 photoresist film at energies from 10 to 400 keY. An overaU good agreement is found between the experimental results and the theoretical predictions by Biersack, Ziegler, and Littmark. It is also observed that a variation in the implantation dose does not affect the projected range and range straggling results, despite the fact that chemical modification of the implanted polymer layer is detected. In addition, we find that a shallow implantation of the polymer film with Hi ions increases the temperature at which the photoresist starts to decompose. Finally, at 300°C the implanted Bi atoms diffuse preferentially toward the bulk. For this temperature, two different diffusion coefficients are estimated, one for the damaged region Dd = 1.2 X 10-5 cm²/s and another for the bulk Db = 1.2x 10 -14 cm²/s. |
publishDate |
1988 |
dc.date.issued.fl_str_mv |
1988 |
dc.date.accessioned.fl_str_mv |
2014-05-13T02:03:40Z |
dc.type.driver.fl_str_mv |
Estrangeiro info:eu-repo/semantics/article |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
format |
article |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://hdl.handle.net/10183/95118 |
dc.identifier.issn.pt_BR.fl_str_mv |
0021-8979 |
dc.identifier.nrb.pt_BR.fl_str_mv |
000014862 |
identifier_str_mv |
0021-8979 000014862 |
url |
http://hdl.handle.net/10183/95118 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.ispartof.pt_BR.fl_str_mv |
Journal of applied physics. Woodbury. Vol. 63, no. 8, pt. 1 (Apr. 1988), p. 2502-2506 |
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info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
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application/pdf |
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