Band-gap shift of the heavily doped single- and double-donor systems Si:Bi and Si:P,Bi

Detalhes bibliográficos
Autor(a) principal: Araújo, C. Moysés
Data de Publicação: 2000
Outros Autores: Almeida, J. Souza de, Pepe, I., Silva, Antonio Ferreira da, Sernelius, Bo E., Souza, Joel Pereira de, Boudinov, Henri Ivanov
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Institucional da UFRGS
Texto Completo: http://hdl.handle.net/10183/103861
Resumo: The band-gap shift of the heavily single and double-donor doped systems Si:Bi and Si:P,Bi, prepared by ion implantation, was investigated theoretically and experimentally at room temperature. The calculations were carried out within a framework of the random-phase approximation and the temperature and different manybody effects were taken into account. The experimental data were obtained with photoconductivity measurements. Theoretical and experimental results fall closely together in a wide range of donor concentration.
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spelling Araújo, C. MoysésAlmeida, J. Souza dePepe, I.Silva, Antonio Ferreira daSernelius, Bo E.Souza, Joel Pereira deBoudinov, Henri Ivanov2014-09-26T02:10:56Z20001098-0121http://hdl.handle.net/10183/103861000279154The band-gap shift of the heavily single and double-donor doped systems Si:Bi and Si:P,Bi, prepared by ion implantation, was investigated theoretically and experimentally at room temperature. The calculations were carried out within a framework of the random-phase approximation and the temperature and different manybody effects were taken into account. The experimental data were obtained with photoconductivity measurements. Theoretical and experimental results fall closely together in a wide range of donor concentration.application/pdfengPhysical review. B, Condensed matter and materials physics. Melville. Vol. 62, no. 19 (Nov. 2000), p. 12882-12887BoroSemicondutores elementaresBanda de energia proibidaSemicondutores fortemente dopadosEstados de impurezaFósforoFotocondutividadeSiliconesBand-gap shift of the heavily doped single- and double-donor systems Si:Bi and Si:P,BiEstrangeiroinfo:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/openAccessreponame:Repositório Institucional da UFRGSinstname:Universidade Federal do Rio Grande do Sul (UFRGS)instacron:UFRGSORIGINAL000279154.pdf000279154.pdfTexto completo (inglês)application/pdf72704http://www.lume.ufrgs.br/bitstream/10183/103861/1/000279154.pdf4ef528980bd2dc9d9e734911b6fd28b3MD51TEXT000279154.pdf.txt000279154.pdf.txtExtracted Texttext/plain21267http://www.lume.ufrgs.br/bitstream/10183/103861/2/000279154.pdf.txtad220312bd89d3e88d7c3fd32d0c26b0MD52THUMBNAIL000279154.pdf.jpg000279154.pdf.jpgGenerated Thumbnailimage/jpeg2003http://www.lume.ufrgs.br/bitstream/10183/103861/3/000279154.pdf.jpgf25ea42d2b3724c4c340ce72be002deaMD5310183/1038612019-01-17 04:23:43.985911oai:www.lume.ufrgs.br:10183/103861Repositório de PublicaçõesPUBhttps://lume.ufrgs.br/oai/requestopendoar:2019-01-17T06:23:43Repositório Institucional da UFRGS - Universidade Federal do Rio Grande do Sul (UFRGS)false
dc.title.pt_BR.fl_str_mv Band-gap shift of the heavily doped single- and double-donor systems Si:Bi and Si:P,Bi
title Band-gap shift of the heavily doped single- and double-donor systems Si:Bi and Si:P,Bi
spellingShingle Band-gap shift of the heavily doped single- and double-donor systems Si:Bi and Si:P,Bi
Araújo, C. Moysés
Boro
Semicondutores elementares
Banda de energia proibida
Semicondutores fortemente dopados
Estados de impureza
Fósforo
Fotocondutividade
Silicones
title_short Band-gap shift of the heavily doped single- and double-donor systems Si:Bi and Si:P,Bi
title_full Band-gap shift of the heavily doped single- and double-donor systems Si:Bi and Si:P,Bi
title_fullStr Band-gap shift of the heavily doped single- and double-donor systems Si:Bi and Si:P,Bi
title_full_unstemmed Band-gap shift of the heavily doped single- and double-donor systems Si:Bi and Si:P,Bi
title_sort Band-gap shift of the heavily doped single- and double-donor systems Si:Bi and Si:P,Bi
author Araújo, C. Moysés
author_facet Araújo, C. Moysés
Almeida, J. Souza de
Pepe, I.
Silva, Antonio Ferreira da
Sernelius, Bo E.
Souza, Joel Pereira de
Boudinov, Henri Ivanov
author_role author
author2 Almeida, J. Souza de
Pepe, I.
Silva, Antonio Ferreira da
Sernelius, Bo E.
Souza, Joel Pereira de
Boudinov, Henri Ivanov
author2_role author
author
author
author
author
author
dc.contributor.author.fl_str_mv Araújo, C. Moysés
Almeida, J. Souza de
Pepe, I.
Silva, Antonio Ferreira da
Sernelius, Bo E.
Souza, Joel Pereira de
Boudinov, Henri Ivanov
dc.subject.por.fl_str_mv Boro
Semicondutores elementares
Banda de energia proibida
Semicondutores fortemente dopados
Estados de impureza
Fósforo
Fotocondutividade
Silicones
topic Boro
Semicondutores elementares
Banda de energia proibida
Semicondutores fortemente dopados
Estados de impureza
Fósforo
Fotocondutividade
Silicones
description The band-gap shift of the heavily single and double-donor doped systems Si:Bi and Si:P,Bi, prepared by ion implantation, was investigated theoretically and experimentally at room temperature. The calculations were carried out within a framework of the random-phase approximation and the temperature and different manybody effects were taken into account. The experimental data were obtained with photoconductivity measurements. Theoretical and experimental results fall closely together in a wide range of donor concentration.
publishDate 2000
dc.date.issued.fl_str_mv 2000
dc.date.accessioned.fl_str_mv 2014-09-26T02:10:56Z
dc.type.driver.fl_str_mv Estrangeiro
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format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://hdl.handle.net/10183/103861
dc.identifier.issn.pt_BR.fl_str_mv 1098-0121
dc.identifier.nrb.pt_BR.fl_str_mv 000279154
identifier_str_mv 1098-0121
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url http://hdl.handle.net/10183/103861
dc.language.iso.fl_str_mv eng
language eng
dc.relation.ispartof.pt_BR.fl_str_mv Physical review. B, Condensed matter and materials physics. Melville. Vol. 62, no. 19 (Nov. 2000), p. 12882-12887
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