Sequential thermal treatments of SiC in NO and O2 : atomic transport and electrical characteristics

Detalhes bibliográficos
Autor(a) principal: Soares, Gabriel Vieira
Data de Publicação: 2007
Outros Autores: Baumvol, Israel Jacob Rabin, Hold, L., Kong, F., Han, J., Dimitrijev, Sima, Radtke, Claudio, Stedile, Fernanda Chiarello
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Institucional da UFRGS
Texto Completo: http://hdl.handle.net/10183/141715
Resumo: Sequential thermal oxidations and oxynitridations of SiC were performed using 18O2 and NO. The resulting films were characterized by x-ray photoelectron spectroscopy, ion beam analyses, and capacitance-voltage measurements. The best electrical characteristics were obtained from films directly grown in NO. A subsequent oxidation in O2 degraded the interface due to negative flatband-voltage shift, removal of N, and formation of C compounds, while a further annealing in NO brought the flatband shift in the C-V curves to rather moderate figures. This shift is related to competitive processes taking place during dielectric film formation which are discussed.
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spelling Soares, Gabriel VieiraBaumvol, Israel Jacob RabinHold, L.Kong, F.Han, J.Dimitrijev, SimaRadtke, ClaudioStedile, Fernanda Chiarello2016-05-24T02:10:51Z20070003-6951http://hdl.handle.net/10183/141715000598386Sequential thermal oxidations and oxynitridations of SiC were performed using 18O2 and NO. The resulting films were characterized by x-ray photoelectron spectroscopy, ion beam analyses, and capacitance-voltage measurements. The best electrical characteristics were obtained from films directly grown in NO. A subsequent oxidation in O2 degraded the interface due to negative flatband-voltage shift, removal of N, and formation of C compounds, while a further annealing in NO brought the flatband shift in the C-V curves to rather moderate figures. This shift is related to competitive processes taking place during dielectric film formation which are discussed.application/pdfengApplied physics letters. Vol. 91, no. 4 (July 2007), 041906, 3 p.Carbeto de silícioOxidaçãoSequential thermal treatments of SiC in NO and O2 : atomic transport and electrical characteristicsEstrangeiroinfo:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/openAccessreponame:Repositório Institucional da UFRGSinstname:Universidade Federal do Rio Grande do Sul (UFRGS)instacron:UFRGSORIGINAL000598386.pdf000598386.pdfTexto completo (inglês)application/pdf628650http://www.lume.ufrgs.br/bitstream/10183/141715/1/000598386.pdf4a5fc554fd0162b3839cc2faa8003f21MD51TEXT000598386.pdf.txt000598386.pdf.txtExtracted Texttext/plain17664http://www.lume.ufrgs.br/bitstream/10183/141715/2/000598386.pdf.txt880135b47f91c89c4b071107094566f9MD52THUMBNAIL000598386.pdf.jpg000598386.pdf.jpgGenerated Thumbnailimage/jpeg2246http://www.lume.ufrgs.br/bitstream/10183/141715/3/000598386.pdf.jpg64b30607dd9dd76701971a31254e1a1aMD5310183/1417152021-06-13 04:29:56.526293oai:www.lume.ufrgs.br:10183/141715Repositório de PublicaçõesPUBhttps://lume.ufrgs.br/oai/requestopendoar:2021-06-13T07:29:56Repositório Institucional da UFRGS - Universidade Federal do Rio Grande do Sul (UFRGS)false
dc.title.pt_BR.fl_str_mv Sequential thermal treatments of SiC in NO and O2 : atomic transport and electrical characteristics
title Sequential thermal treatments of SiC in NO and O2 : atomic transport and electrical characteristics
spellingShingle Sequential thermal treatments of SiC in NO and O2 : atomic transport and electrical characteristics
Soares, Gabriel Vieira
Carbeto de silício
Oxidação
title_short Sequential thermal treatments of SiC in NO and O2 : atomic transport and electrical characteristics
title_full Sequential thermal treatments of SiC in NO and O2 : atomic transport and electrical characteristics
title_fullStr Sequential thermal treatments of SiC in NO and O2 : atomic transport and electrical characteristics
title_full_unstemmed Sequential thermal treatments of SiC in NO and O2 : atomic transport and electrical characteristics
title_sort Sequential thermal treatments of SiC in NO and O2 : atomic transport and electrical characteristics
author Soares, Gabriel Vieira
author_facet Soares, Gabriel Vieira
Baumvol, Israel Jacob Rabin
Hold, L.
Kong, F.
Han, J.
Dimitrijev, Sima
Radtke, Claudio
Stedile, Fernanda Chiarello
author_role author
author2 Baumvol, Israel Jacob Rabin
Hold, L.
Kong, F.
Han, J.
Dimitrijev, Sima
Radtke, Claudio
Stedile, Fernanda Chiarello
author2_role author
author
author
author
author
author
author
dc.contributor.author.fl_str_mv Soares, Gabriel Vieira
Baumvol, Israel Jacob Rabin
Hold, L.
Kong, F.
Han, J.
Dimitrijev, Sima
Radtke, Claudio
Stedile, Fernanda Chiarello
dc.subject.por.fl_str_mv Carbeto de silício
Oxidação
topic Carbeto de silício
Oxidação
description Sequential thermal oxidations and oxynitridations of SiC were performed using 18O2 and NO. The resulting films were characterized by x-ray photoelectron spectroscopy, ion beam analyses, and capacitance-voltage measurements. The best electrical characteristics were obtained from films directly grown in NO. A subsequent oxidation in O2 degraded the interface due to negative flatband-voltage shift, removal of N, and formation of C compounds, while a further annealing in NO brought the flatband shift in the C-V curves to rather moderate figures. This shift is related to competitive processes taking place during dielectric film formation which are discussed.
publishDate 2007
dc.date.issued.fl_str_mv 2007
dc.date.accessioned.fl_str_mv 2016-05-24T02:10:51Z
dc.type.driver.fl_str_mv Estrangeiro
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dc.identifier.uri.fl_str_mv http://hdl.handle.net/10183/141715
dc.identifier.issn.pt_BR.fl_str_mv 0003-6951
dc.identifier.nrb.pt_BR.fl_str_mv 000598386
identifier_str_mv 0003-6951
000598386
url http://hdl.handle.net/10183/141715
dc.language.iso.fl_str_mv eng
language eng
dc.relation.ispartof.pt_BR.fl_str_mv Applied physics letters. Vol. 91, no. 4 (July 2007), 041906, 3 p.
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