Spatial separation of vacancy and interstitial defects formed in Si by oxygen-ion irradiation at elevated temperature

Detalhes bibliográficos
Autor(a) principal: Danilov, Iuri
Data de Publicação: 2005
Outros Autores: Boudinov, Henri Ivanov, Souza, Joel Pereira de, Drozdov, Yu. N.
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Institucional da UFRGS
Texto Completo: http://hdl.handle.net/10183/96095
Resumo: A study of damage depth distribution in Si by elevated temperature O+-ion implantation was performed using three structures: (i) bulk Si, (ii) Si/SiO2 /bulk Si, and (iii) SiO2 /bulk Si. The samples were implanted at 250°C with a dose of 5x1016 cm-² at an energy of 185 keV. By this approach, the damage depth profile distributes along the SiO2 and Si layers in a different manner according to the sample structure. A comparative analysis of the high-resolution x-ray diffraction spectra taken from the implanted samples permitted us to infer on the spatial separation between vacancy and interstitial-rich layers, which are associated with the presence of negative and positive strained layers, respectively.
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spelling Danilov, IuriBoudinov, Henri IvanovSouza, Joel Pereira deDrozdov, Yu. N.2014-06-06T02:06:21Z20050021-8979http://hdl.handle.net/10183/96095000534083A study of damage depth distribution in Si by elevated temperature O+-ion implantation was performed using three structures: (i) bulk Si, (ii) Si/SiO2 /bulk Si, and (iii) SiO2 /bulk Si. The samples were implanted at 250°C with a dose of 5x1016 cm-² at an energy of 185 keV. By this approach, the damage depth profile distributes along the SiO2 and Si layers in a different manner according to the sample structure. A comparative analysis of the high-resolution x-ray diffraction spectra taken from the implanted samples permitted us to infer on the spatial separation between vacancy and interstitial-rich layers, which are associated with the presence of negative and positive strained layers, respectively.application/pdfengJournal of applied physics. Vol. 97, no. 7 (Apr. 2005), 076106 3p.Semicondutores elementaresIntersticiaisEfeitos de feixe iônicoSilícioCompostos de silícioDifração de raios XVacancias cristalSpatial separation of vacancy and interstitial defects formed in Si by oxygen-ion irradiation at elevated temperatureEstrangeiroinfo:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/openAccessreponame:Repositório Institucional da UFRGSinstname:Universidade Federal do Rio Grande do Sul (UFRGS)instacron:UFRGSORIGINAL000534083.pdf000534083.pdfTexto completo (inglês)application/pdf200669http://www.lume.ufrgs.br/bitstream/10183/96095/1/000534083.pdf6970b080898f8ab4fb256ff83e50bbbfMD51TEXT000534083.pdf.txt000534083.pdf.txtExtracted Texttext/plain15729http://www.lume.ufrgs.br/bitstream/10183/96095/2/000534083.pdf.txt6206abfa1ccaacd96724e8dd0e7da7b1MD52THUMBNAIL000534083.pdf.jpg000534083.pdf.jpgGenerated Thumbnailimage/jpeg1598http://www.lume.ufrgs.br/bitstream/10183/96095/3/000534083.pdf.jpg4730eeaa5f048d2d208b2a137c2def11MD5310183/960952022-02-22 04:50:39.06008oai:www.lume.ufrgs.br:10183/96095Repositório de PublicaçõesPUBhttps://lume.ufrgs.br/oai/requestopendoar:2022-02-22T07:50:39Repositório Institucional da UFRGS - Universidade Federal do Rio Grande do Sul (UFRGS)false
dc.title.pt_BR.fl_str_mv Spatial separation of vacancy and interstitial defects formed in Si by oxygen-ion irradiation at elevated temperature
title Spatial separation of vacancy and interstitial defects formed in Si by oxygen-ion irradiation at elevated temperature
spellingShingle Spatial separation of vacancy and interstitial defects formed in Si by oxygen-ion irradiation at elevated temperature
Danilov, Iuri
Semicondutores elementares
Intersticiais
Efeitos de feixe iônico
Silício
Compostos de silício
Difração de raios X
Vacancias cristal
title_short Spatial separation of vacancy and interstitial defects formed in Si by oxygen-ion irradiation at elevated temperature
title_full Spatial separation of vacancy and interstitial defects formed in Si by oxygen-ion irradiation at elevated temperature
title_fullStr Spatial separation of vacancy and interstitial defects formed in Si by oxygen-ion irradiation at elevated temperature
title_full_unstemmed Spatial separation of vacancy and interstitial defects formed in Si by oxygen-ion irradiation at elevated temperature
title_sort Spatial separation of vacancy and interstitial defects formed in Si by oxygen-ion irradiation at elevated temperature
author Danilov, Iuri
author_facet Danilov, Iuri
Boudinov, Henri Ivanov
Souza, Joel Pereira de
Drozdov, Yu. N.
author_role author
author2 Boudinov, Henri Ivanov
Souza, Joel Pereira de
Drozdov, Yu. N.
author2_role author
author
author
dc.contributor.author.fl_str_mv Danilov, Iuri
Boudinov, Henri Ivanov
Souza, Joel Pereira de
Drozdov, Yu. N.
dc.subject.por.fl_str_mv Semicondutores elementares
Intersticiais
Efeitos de feixe iônico
Silício
Compostos de silício
Difração de raios X
Vacancias cristal
topic Semicondutores elementares
Intersticiais
Efeitos de feixe iônico
Silício
Compostos de silício
Difração de raios X
Vacancias cristal
description A study of damage depth distribution in Si by elevated temperature O+-ion implantation was performed using three structures: (i) bulk Si, (ii) Si/SiO2 /bulk Si, and (iii) SiO2 /bulk Si. The samples were implanted at 250°C with a dose of 5x1016 cm-² at an energy of 185 keV. By this approach, the damage depth profile distributes along the SiO2 and Si layers in a different manner according to the sample structure. A comparative analysis of the high-resolution x-ray diffraction spectra taken from the implanted samples permitted us to infer on the spatial separation between vacancy and interstitial-rich layers, which are associated with the presence of negative and positive strained layers, respectively.
publishDate 2005
dc.date.issued.fl_str_mv 2005
dc.date.accessioned.fl_str_mv 2014-06-06T02:06:21Z
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dc.identifier.uri.fl_str_mv http://hdl.handle.net/10183/96095
dc.identifier.issn.pt_BR.fl_str_mv 0021-8979
dc.identifier.nrb.pt_BR.fl_str_mv 000534083
identifier_str_mv 0021-8979
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url http://hdl.handle.net/10183/96095
dc.language.iso.fl_str_mv eng
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dc.relation.ispartof.pt_BR.fl_str_mv Journal of applied physics. Vol. 97, no. 7 (Apr. 2005), 076106 3p.
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